©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
5.3A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120BNS and HGTP1N120BN are
N
on-
P
unch
T
hrough (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49316.
Symbol
Features
• 5.3A, 1200V, T
C
= 25
o
C
• 1200V Switching SOA Capability
• Typical E
OFF
. . . . . . . . . . . . . . . . . . 120
µ
J at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
•
Temperature Compensating
SABER™ Model
Thermal Impedance
SPICE Model
www.fairchildsemi.com
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
JEDEC TO-252AA
Ordering Information
PART NUMBER PACKAGE BRAND
HGTD1N120BNS TO-252AA 1N120B
HGTP1N120BN TO-220AB 1N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A
C
E
G
ECG
COLLECTOR
(FLANGE)
E
COLLECTOR
(FLANGE)
G
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet January 2001
©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200 V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
5.3 A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
2.7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
6A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
±
20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
±
30 V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 6A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
60 W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/
o
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
10 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
260
o
C
Short Circuit Withstand Time (Note 3) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
µ
s
Short Circuit Withstand Time (Note 3) at V
GE
= 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
13
µ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. I
CE
= 7A, L = 400
µ
H, V
GE
= 15V, T
J
= 25
o
C.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 82
Ω.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CES
I
C
= 250
µ
A, V
GE
= 0V 1200 - - V
Emitter to Collector Breakdown Voltage BV
ECS
I
C
= 10mA, V
GE
= 0V 15 - - V
Collector to Emitter Leakage Current I
CES
V
CE
= 1200V T
C
= 25
o
C - - 250
µ
A
T
C
= 125
o
C - 20 -
µ
A
T
C
= 150
o
C - - 1.0 mA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
= 1.0A
V
GE
= 15V
T
C
= 25
o
C - 2.5 2.9 V
T
C
= 150
o
C - 3.8 4.3 V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
= 50
µ
A, V
CE
= V
GE
6.0 7.1 - V
Gate to Emitter Leakage Current I
GES
V
GE
=
±
20V - -
±
250 nA
Switching SOA SSOA T
J
= 150
o
C, R
G
= 82
Ω,
V
GE
= 15V,
L = 2mH, V
CE(PK)
= 1200V
6- - A
Gate to Emitter Plateau Voltage V
GEP
I
C
= 1.0A, V
CE
= 600V - 9.2 - V
On-State Gate Charge Q
G(ON)
I
C
= 1.0A
V
CE
= 600V
V
GE
= 15V - 14 20 nC
V
GE
= 20V - 15 21 nC
HGTD1N120BNS, HGTP1N120BN
©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 1.0A
V
CE
= 960V
V
GE
= 15V
R
G
= 82
Ω
L = 4mH
Test Circuit (Figure 18)
-1520ns
Current Rise Time t
rI
-1114ns
Current Turn-Off Delay Time t
d(OFF)I
-6776ns
Current Fall Time t
fI
- 226 300 ns
Turn-On Energy (Note 5) E
ON1
-70 - µJ
Turn-On Energy (Note 5) E
ON2
- 172 187 µJ
Turn-Off Energy (Note 4) E
OFF
- 90 123 µJ
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 1.0 A
V
CE
= 960V
V
GE
= 15V
R
G
= 82
Ω
L = 4mH
Test Circuit (Figure 18)
-1317ns
Current Rise Time trI -1115ns
Current Turn-Off Delay Time td(OFF)I -7588ns
Current Fall Time tfI - 258 370 ns
Turn-On Energy (Note 5) EON1 - 145 - µJ
Turn-On Energy (Note 5) EON2 - 385 440 µJ
Turn-Off Energy (Note 4) EOFF - 120 175 µJ
Thermal Resistance Junction To Case RθJC - - 2.1 oC/W
NOTES:
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.
Typical Performance Curves (Unless Otherwise Specified)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
0
4
5
1
25 75 100 125 150
3
2
6
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
3
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
1
2
600 800400200 1000 1200
0
4
6
5
7
TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH
HGTD1N120BNS, HGTP1N120BN
©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves (Unless Otherwise Specified) (Continued)
fMAX, OPERATING FREQUENCY (kHz)
0.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
5
10
2.01.0
100
3.0
200
300 TCVGE
110oC13V
15V
15V
75oC
110oC
75oC13V
TJ = 150oC, RG = 82Ω, L = 4mH, VCE = 960V
TC = 75oC, VGE = 15V
IDEAL DIODE
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 2.1oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
VGE , GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
13 14 14.5 15
10
12
16
20
18
13.5
14
10
12
16
20
18
14
VCE = 840V, RG = 82Ω, TJ = 125oC
tSC
ISC
024
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
2
4
6
6810
1
3
5
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 13V
TC = 150oC
TC = 25oC
TC = -55oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2
3
4
0246810
1
6
0
5
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
TC = -55oC TC = 150oC
TC = 25oC
EON2, TURN-ON ENERGY LOSS (µJ)
1000
600
ICE, COLLECTOR TO EMITTER CURRENT (A)
800
400
200
1.5120.5
1200
2.5
0
3
RG = 82Ω, L = 4mH, VCE = 960V
TJ = 150oC, VGE = 13V
TJ = 150oC, VGE = 15V
TJ = 25oC, VGE = 15V
TJ = 25oC, VGE = 13V
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (µJ)
01 1.5
2
0.5
50
150
100
200
250
2.5 3
TJ = 150oC, VGE = 13V OR 15V
TJ = 25oC, VGE = 13V OR 15V
RG = 82Ω, L = 4mH, VCE = 960V
HGTD1N120BNS, HGTP1N120BN
©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves (Unless Otherwise Specified) (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
10 1.5 2 2.5 3
td(ON)I, TURN-ON DELAY TIME (ns)
8
12
20
16
24
RG = 82Ω, L = 4mH, VCE = 960V
TJVGE
25oC13V
150oC13V
25oC15V
150oC15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
1
4
8
24
20
12
20.5
16
1.5 2.5
28
3
RG = 82Ω, L = 4mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 13V
TJ = 25oC, TJ = 150oC, VGE = 15V
12
64
1.5
56
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
2.5
84
72
76
30.5
60
68
80
TJ = 150oC, VGE = 15V
TJ = 25oC, VGE = 13V
RG = 82Ω, L = 4mH, VCE = 960V
TJ = 150oC, VGE = 13V
TJ = 25oC, VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
0.5 1 2
160
240
1.5
120
280
360
2.5 3
320
200
RG = 82Ω, L = 4mH, VCE = 960V
TJ = 25oC, VGE = 13V OR 15V
TJ = 150oC, VGE = 13V OR 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
2
4
6
137 8 9 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
11
8
10
12
14 15
14
16
18
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 20V
TC = -55oC
TC = 150oC
TC = 25oC
VGE , GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
15
3
6
00208412
9
12
16
IG(REF) = 1mA, RL = 600Ω, TC = 25oC
VCE = 1200V
VCE = 800V
VCE = 400V
HGTD1N120BNS, HGTP1N120BN
©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS
Typical Performance Curves (Unless Otherwise Specified) (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
50
C, CAPACITANCE (pF)
100
150
250
300
200
350
CIES
COES
CRES
FREQUENCY = 1MHz
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
4
02
0410
2
6
68
1
3
5
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TC = 110oC
VGE = 12V
VGE = 10V
VGE = 15V
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, NORMALIZED THERMAL RESPONSE
0.005
0.01
1.0
10-3 10-2 10-1 100
10-4
10-5
2.0
0.1 t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
0.1
0.01
0.02
0.5
0.05
0.2
RG = 82Ω
L = 4mH
VDD = 960V
+
-
RHRD4120
tfI
td(OFF)I
trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
ICE
HGTD1N120BNS, HGTP1N120BN
©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 19. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in
the calculation for EOFF; i.e., the collector current equals
zero (ICE = 0).
HGTD1N120BNS, HGTP1N120BN
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™