DMN6069SFG-13 - DIODES INC - Product.Network

DMN6069SFG

Document number: DS37821 Rev. 4 - 2

1 of 7

www.diodes.com

November 2016

DMN6069SFG

60V N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

Product Summary

BVDSS

RDS(ON) Max

ID Max

TC = +25°C

60V

50mΩ @ VGS = 10V

18A

63mΩ @ VGS = 4.5V

16A

Description and Applications

This MOSFET is designed to minimize the on-state resistance

(RDS(ON)), yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

 Backlighting

 Power Management Functions

 DC-DC Converters

Features and Benefits

 Low RDS(ON) – Ensures On-State Losses are Minimized

 Small Form Factor Thermally Efficient Package Enables Higher

Density End Products (PowerDI®)

 Occupies Just 33% of the Board Area Occupied by SO-8 Enabling

Smaller End Product

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: PowerDI3333-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See Diagram

 Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.03 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN6069SFG-7

PowerDI3333-8

2,000/Tape & Reel

DMN6069SFG-13

PowerDI3333-8

3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Top View

Bottom View

PowerDI3333-8

SSSG

DDDD

Pin 1

N69 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 16 = 2016)

WW = Week Code (01 to 53)

D

S

G

Equivalent Circuit

N69

YYWW

PowerDI is a registered trademark of Diodes Incorporated.

DMN6069SFG

Document number: DS37821 Rev. 4 - 2

2 of 7

www.diodes.com

November 2016

DMN6069SFG

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady State

TA = +25°C

TA = +70°C

ID

5.6

4.5

A

Steady State

TC = +25°C

TC = +70°C

ID

18

14.5

A

Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)

IDM

25

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

2.5

A

Avalanche Current (Note 7) L = 0.1mH

IAS

12

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

7.2

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

PD

0.93

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

134

°C/W

t<10s

82

Total Power Dissipation (Note 6)

PD

2.4

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

53

°C/W

t<10s

33

Thermal Resistance, Junction to Case

RθJC

5

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

60

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

1

µA

VDS = 60V, VGS = 0V

Zero Gate Voltage Drain Current TJ = +150°C (Note 9)

IDSS

—

100

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1

—

3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

39

50

mΩ

VGS = 10V, ID = 4.5A

—

47

63

VGS = 4.5V, ID = 3A

Diode Forward Voltage

VSD

—

1.1

V

VGS = 0V, IS = 2.5A

On State Drain Current (Note 9)

ID(ON)

20

—

A

VDS ≧5V, VGS = 10V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS

—

740

1,480

pF

VDS = 30V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

40

80

pF

Reverse Transfer Capacitance

CRSS

—

28

55

pF

Gate Resistance

RG

—

2.2

4

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

QG

—

6.4

12

nC

VDS = 30V, ID = 12A

Total Gate Charge (VGS = 10V)

QG

—

14

25

nC

Gate-Source Charge

QGS

—

2.8

5.5

nC

Gate-Drain Charge

QGD

—

2.3

5

nC

Turn-On Delay Time

tD(ON)

—

3.6

10

ns

VDS = 30V, ID = 12A

VGS = 10V, RG = 6.0Ω

Turn-On Rise Time

tR

—

5.0

10

ns

Turn-Off Delay Time

tD(OFF)

—

12

24

ns

Turn-Off Fall Time

tF

—

3.3

10

ns

Body Diode Reverse Recovery Time

tRR

—

11

22

ns

IF = 4.5A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—

5.1

10

nC

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN6069SFG

Document number: DS37821 Rev. 4 - 2

3 of 7

www.diodes.com

November 2016

DMN6069SFG

0.0

5.0

10.0

15.0

20.0

0 0.5 1 1.5 2 2.5 3

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

VGS=3.0V

VGS=3.5V

VGS=4.5V

VGS=5.0V

VGS=10V

0

5

10

15

20

0 0.5 1 1.5 2 2.5 3 3.5 4

ID, DRAIN CURRENT (A)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

VDS= 10V

TA=-55℃

TA=25℃

TA=85℃

TA=125℃

TA=150℃

0

0.02

0.04

0.06

0.08

0.1

0 5 10 15 20

RDS(ON), DRAIN-SOURCE

ON-RESISTANCE (Ω)

ID, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current

and Gate Voltage

VGS=4.5V

VGS=10V

0

0.04

0.08

0.12

0.16

0 5 10 15 20

RDS(ON), DRAIN-SOURCE

ON-RESISTANCE (Ω)

ID, DRAIN CURRENT (A)

Figure 4. Typical On-Resistance vs. Drain Current

and Temperature

VGS= 4.5V

TA=-55℃

TA=25℃

TA=85℃

TA=125℃ TA=150℃

0.4

0.8

1.2

1.6

2

2.4

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

TJ, JUNCTION TEMPERATURE (℃)

Figure 5. On-Resistance Variation with Temperature

VGS=5V, ID=5A

VGS=10V, ID=12A

0

0.02

0.04

0.06

0.08

0.1

0.12

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

TJ, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with

Temperature

VGS=10V, ID=12A

VGS=5V, ID=5A

DMN6069SFG

Document number: DS37821 Rev. 4 - 2

4 of 7

www.diodes.com

November 2016

DMN6069SFG

0

0.5

1

1.5

2

2.5

3

-50 -25 025 50 75 100 125 150

VGS(TH), GATE THRESHOLD VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (℃)

Figure 7. Gate Threshold Variation vs.

JunctionTemperature

ID=1mA

ID=250µA

0

5

10

15

20

0 0.2 0.4 0.6 0.8 1 1.2

IS, SOURCE CURRENT (A)

VSD, SOURCE-DRAIN VOLTAGE (V)

Figure 8. Diode Forward Voltage vs. Current

VGS=0V

TA=-55℃

TA=25℃

TA=85℃

TA=125℃

TA=150℃

0.1

1

10

100

1000

10000

010 20 30 40 50 60

IDSS, LEAKAGE CURRENT (nA)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Typical Drain-Source Leakge Current vs.

Voltage

25℃

85℃

125℃

150℃

0

1

2

3

4

5

6

7

8

9

10

0 2 4 6 8 10 12 14 16

VGS (V)

Qg (nC)

Figure 10. Gate Charge

VDS=30V, ID=12A

10

100

1000

10000

010 20 30 40

CT, JUNCTION CAPACITANCE (pF)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 11. Typical Junction Capacitance

f=1MHz

Ciss

Coss

Crss

0.01

0.1

1

10

100

0.1 1 10 100

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

TJ(Max)=150

℃

TA=25℃

Single Pulse

DUT on 1*MRP board

VGS=10V

RDS(ON) LIMITED

PW=10s

DC

PW=1s

PW=100ms

PW=10ms PW=1ms

PW=100µs

DMN6069SFG

Document number: DS37821 Rev. 4 - 2

5 of 7

www.diodes.com

November 2016

DMN6069SFG

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIME (sec)

Figure 13. Transient Thermal Resistance

R

θJA

(t)=r(t) * R

θJA

RθJA=134℃/W

Duty Cycle, D=t1/t2

D=Single Pulse

D=0.005

D=0.01

D=0.02

D=0.05

D=0.1

D=0.3

D=0.5 D=0.7 D=0.9

DMN6069SFG

Document number: DS37821 Rev. 4 - 2

6 of 7

www.diodes.com

November 2016

DMN6069SFG

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

PowerDI3333-8

Dim

Min

Max

Typ

A

0.75

0.85

0.80

A1

0.00

0.05

0.02

A3



0.203

b

0.27

0.37

0.32

b2

0.15

0.25

0.20

D

3.25

3.35

3.30

D2

2.22

2.32

2.27

E

3.25

3.35

3.30

E2

1.56

1.66

1.61

E3

0.79

0.89

0.84

E4

1.60

1.70

1.65

e



0.65

L

0.35

0.45

0.40

L1



0.39

z



0.515

All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

PowerDI3333-8

Dimensions

Value (in mm)

C

0.650

X

0.420

X1

0.420

X2

0.230

X3

2.370

Y

0.700

Y1

1.850

Y2

2.250

Y3

3.700

D

D2

E

e

b

E2

A

A3

Pin #1 ID

Seating Plane

L( 4x)

A1

L1( 3x)

b2( 4x)

z( 4x)

1

8

E3

E4

X3

Y3

X

Y

C

Y1

Y2

X1

X2

1

8

DMN6069SFG

Document number: DS37821 Rev. 4 - 2

7 of 7

www.diodes.com

November 2016

DMN6069SFG

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com