Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS 20V
▼ Capable of 2.5V Gate Drive RDS(ON) 50mΩ
▼ Single Drive Requirement ID4A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3100 ℃/W
Data and specifications subject to change without notice
200910191
Halogen-Free Product
1
-55 to 150
-55 to 150
AP9452AGG-HF
Parameter Rating
Drain-Source Voltage 20
Gate-Source Voltage +12
Continuous Drain Current, VGS @ 4.5V34
Continuous Drain Current, VGS @ 4.5V32.5
Pulsed Drain Current112
Total Power Dissipation 1.25
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
D
GDS
SOT-89
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=4A - - 38 mΩ
VGS=4.5V, ID=4A - - 50 mΩ
VGS=2.5V, ID=3A - - 80 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.4 - 1.2 V
gfs Forward Transconductance2VDS=5V, ID=3A - 12.6 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA
IGSS Gate-Source Leakage VGS= +12V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=4A - 7 11.2 nC
Qgs Gate-Source Charge VDS=16V - 0.7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.4 - nC
td(on) Turn-on Delay Time2VDS=10V - 8 - ns
trRise Time ID=1A - 9.5 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 13 - ns
tfFall Time RD=10Ω-5-
ns
Ciss Input Capacitance VGS=0V - 260 415 pF
Coss Output Capacitance VDS=20V - 90 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF
RgGate Resistance f=1.0MHz - 1.6 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=2A, VGS=0V, - 18.5 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mount on FR4 board, t < 10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9452AGG-HF
A
P9452AGG-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
4
8
12
16
20
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC5.0V
4.5V
3.5V
2.5V
VGS =2.0V
0
4
8
12
16
20
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC5.0V
4.5V
3.5V
2.5V
VGS =2.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
VGS =4.5V
ID=4A
0
1
2
3
4
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source -to-Drain Voltage (V)
IS (A)
Tj=25oCTj=150oC
0
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized VGS(th) (V)
25
27
29
31
33
35
37
123456
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=3A
TA=25oC
AP9452AGG-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0
2
4
6
8
024681012
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
ID=4A
VDS =10V
VDS =12V
VDS =16 V
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25 oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Rthja=100℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
100
200
300
400
1 5 9 13172125
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
Operation in this
area limited by
RDS(ON)
