A
P03N40AP-HF
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Avalanche Test BVDSS 400V
▼ Fast Switching Characteristic RDS(ON) 2.6Ω
▼ Simple Drive Requirement ID2.7A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
PD@TA=25℃Total Power Dissipation W
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 2.8 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W
Data & specifications subject to change without notice
Storage Temperature Range -55 to 150
1
Parameter
Parameter
+20
Rating
400
Halogen-Free Product
2.7
10
44.6
-55 to 150
201010121
2
The AP03N40A provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching, ruggedized design and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications. The good thermal performance and low package
cost, Contribute to its wide industry application.
G
D
S
GDSTO-220(P)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 400 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=1.3A - - 2.6 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=1.3A - 2 - S
IDSS Drain-Source Leakage Current VDS=320V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=1A - 11 17.5 nC
Qgs Gate-Source Charge VDS=320V - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 5 - nC
td(on) Turn-on Delay Time2VDD=200V - 8 - ns
trRise Time ID=1A - 4.5 - ns
td(off) Turn-off Delay Time RG=3.3Ω-17-ns
tfFall Time VGS=10V - 10 - ns
Ciss Input Capacitance VGS=0V - 370 600 pF
Coss Output Capacitance VDS=25V - 45 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 9 - pF
RgGate Resistance f=1.0MHz - 3.2 6.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.3A, VGS=0V - - 1.5 V
trr Reverse Recovery Time2IS=1A, VGS=0V, - 150 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 820 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP03N40AP-HF
2
A
P03N40AP-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
1
2
3
4
5
6
0 8 16 24 32
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
8.0V
7.0V
6.0V
VG=5.0V
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=1.3A
VG=10V
0
1
2
3
0 4 8 12 16 20 24
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
8.0V
7.0V
6.0V
VG=5.0V
0
0.4
0.8
1.2
1.6
2
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCT
j = 25oC
0
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
ID=250uA
ID=1mA
AP03N40AP-H
F
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
Single Pulse
10us
100us
1ms
10ms
100ms
DC
0
2
4
6
8
10
12
0 4 8 12 16
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=1A
VDS =320V
0
100
200
300
400
500
600
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
Operation in this
area limited by
RDS(ON)
