VISHAY
TLLG / R / Y540.
Document Number 83030
Rev. 1.3, 17-Jun-04
Vishay Semiconductors
www.vishay.com
1
96 11505
Low Current LED in ∅ 5 mm Tinted Diffused Package
Features
• Low power consumption
• High brightness
• CMOS/MOS compatible
• Specified at IF = 2 mA
• Luminous intensity categorized
• Yellow and green color categorized
Applications
Low power DC circuits
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLL.540.
Part Color, Luminous Intensity Angle of Half Intensity (±ϕ)Technology
TLLR5400 High eff. red, IV > 0.63 mcd 25 ° GaAsP on GaP
TLLR5401 High eff. red, IV > 1 mcd 25 ° GaAsP on GaP
TLLY5400 Yellow, IV > 0.63 mcd 25 ° GaAsP on GaP
TLLY5401 Yellow, IV > 1 mcd 25 ° GaAsP on GaP
TLLG5400 Green, IV > 0.63 mcd 25 ° GaP on GaP
TLLG5401 Green, IV > 1 mcd 25 ° GaP on GaP
Parameter Test condition Symbol Value Unit
Reverse voltage VR6V
DC Forward current Tamb ≤ 90 °C IF7mA
Surge forward current tp ≤ 10 µsI
FSM 0.15 A
Power dissipation Tamb ≤ 90 °C PV20 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/
ambient
RthJA 500 K/W
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Document Number 83030
Rev. 1.3, 17-Jun-04
VISHAY
TLLG / R / Y540.
Vishay Semiconductors
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
High efficiency red
TLLR540.
1) in one Packing Unit IVmin/IVmax ≤ 0.5
Yellow
TLLY540.
1) in one Packing Unit IVmin/IVmax ≤ 0.5
Green
TLLG540.
1) in one Packing Unit IVmin/IVmax ≤ 0.5
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 2 mA TLLR5400 IV0.63 1.2 mcd
TLLR5401 IV12 mcd
Dominant wavelength IF = 2 mA λd612 625 nm
Peak wavelength IF = 2 mA λp635 nm
Angle of half intensity IF = 2 mA ϕ± 25 deg
Forward voltage IF = 2 mA VF1.9 2.4 V
Reverse voltage IR = 10 µAV
R620 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 2 mA TLLY5400 IV0.63 1.2 mcd
TLLY5401 IV12 mcd
Dominant wavelength IF = 2 mA λd581 594 nm
Peak wavelength IF = 2 mA λp585 nm
Angle of half intensity IF = 2 mA ϕ± 25 deg
Forward voltage IF = 2 mA VF2.4 2.9 V
Reverse voltage IR = 10 µAV
R620 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 2 mA TLLG5400 IV0.63 1.2 mcd
TLLG5401 IV12 mcd
Dominant wavelength IF = 2 mA λd562 575 nm
Peak wavelength IF = 2 mA λp565 nm
Angle of half intensity IF = 2 mA ϕ± 25 deg
Forward voltage IF = 2 mA VF1.9 2.4 V
Reverse voltage IR = 10 µAV
R620 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
VISHAY
TLLG / R / Y540.
Document Number 83030
Rev. 1.3, 17-Jun-04
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
5
0
10
15
20
25
T
amb
- Ambient Temperature ( °C)
95 10063
P - Power Dissipation ( mW )
V
0 2040 6080100
0
2
4
6
8
10
I - Forward Current ( mA )
F
T
amb
- Ambient Temperature ( °C)
0 2040 6080100
0.4 0.2 0 0.2 0.4 0.6
95 10060
0.6
0.9
0.8
0°°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
I - Relative Luminous Intensity
v rel
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
0.1
1
10
100
VF- Forward Voltage ( V )
95 10050
I - Forward Current ( mA )
F
High Efficiency Red
tp/T= 0.001
tp=10µs
543201
0
95 10051
20 40 60 80 100
I - Relative Luminous Intensity
vrel
IF=2mA
0
0.4
0.8
1.2
1.6
2.0
High Efficiency Red
Tamb - Ambient Temperature ( °C)
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
96 11490
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I - Relative Luminous Intensity
v rel
2.0
High Efficiency Red
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Document Number 83030
Rev. 1.3, 17-Jun-04
VISHAY
TLLG / R / Y540.
Vishay Semiconductors
Figure 7. Relative Luminous Intensity vs. Forward Current
Figure 8. Relative Intensity vs. Wavelength
Figure 9. Forward Current vs. Forward Voltage
0.01
0.1
1
10
100
95 10061
IF- Forward Current ( mA )
High Efficiency Red
I - Relative Luminous Intensity
Vre l
1001010.1
590 610 630 650 670
0
0.2
0.4
0.6
0.8
1.2
690
95 10040
ıλ- Wavelength ( nm )
1.0
High Efficiency Red
I - Relative Luminous Intensity
Vre l
01234
0.1
1
10
100
VF– Forward Voltage(V)
5
95 10053
I – Forward Current ( mA)
F
Yellow
tp/T=0.001
tp=10µs
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
Figure 11. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 12. Relative Luminous Intensity vs. Forward Current
0
0.4
0.8
1.2
1.6
2.0
I - Relative Luminous Intensity
v rel
Yellow
Tamb - Ambient Temperature ( °C)
95 10054
0 2040 6080100
Yellow
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
96 11590
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I - Relative Luminous Intensity
v rel
2.0
Yellow
0.01
0.1
1
10
100
95 10062
IF- Forward Current ( mA )
I - Relative Luminous Intensity
Vre l
1001010.1
VISHAY
TLLG / R / Y540.
Document Number 83030
Rev. 1.3, 17-Jun-04
Vishay Semiconductors
www.vishay.com
5
Figure 13. Relative Intensity vs. Wavelength
Figure 14. Forward Current vs. Forward Voltage
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
550 570 590 610 630
0
0.2
0.4
0.6
0.8
1.2
650
95 10039
λ-- Wavelength ( nm )
1.0
Yellow
I - Relative Luminous Intensity
Vrel
01234
0.1
1
10
100
VF– Forward Voltage(V)
5
95 10056
I – Forward Current ( mA)
F
Green
tp/T=0.001
tp=10 µs
0
0
0.4
0.8
1.2
1.6
95 10057
20 40 60 80 100
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature (°C )
Green
IF=2mA
Figure 16. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 17. Relative Luminous Intensity vs. Forward Current
Figure 18. Relative Intensity vs. Wavelength
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
96 11591
500
0.5 0.2 0.1 0.05 0.021
I
F
(mA)
t
p
/T
I – Relative Luminous Intensity
v rel
2.0
Green
0.1 1 10
0.01
0.1
1
10
100
100
95 10059
I – Relative Luminous Intensity
v rel
IF– Forward Current ( mA )
Green
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
95 10038
λ-- Wavelength ( nm )
1.0
Green
I - Relative Luminous Intensity
Vrel
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Document Number 83030
Rev. 1.3, 17-Jun-04
VISHAY
TLLG / R / Y540.
Vishay Semiconductors
Package Dimensions in mm
95 10916
VISHAY
TLLG / R / Y540.
Document Number 83030
Rev. 1.3, 17-Jun-04
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
