MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 OUTLINE DRAWING Dimensions in mm a YO 10.5MAX.__ x \ a \ a Nee | Ae o. 2135 ' 0 are 54 ae 0:8 eg a4 2 Ly ai (23.4 Nt 1: GATE j 2 DRAIN @VDSS cree creer etre eee e tee e nee n ene ceeereenees 300V o \ 3 SOURCE ~ 4 DRAIN @ros (ON) (MAX) Pr er a ae 0.330 x | 20A O38 Integrated Fast Recovery Diode (MAX.) --- 150ns 10-2208 APPLICATION Servo motor drive, Robot, UPS, inverter Fluorecent lamp, etc. MAXIMUM RATINGS (Tc = 25C) Symbol Parameter Conditions Ratings Unit Vbss Drain-source voltage Vas =0V 300 Vv Vess Gate-source voltage Vps = 0V 30 Vv Ip Drain current 20 A IDM Drain current (Pulsed) 60 A Is Source current 20 A ism Source current (Pulsed) 60 A Pb Maximum power dissipation 150 Ww Toh Channel temperature ~5S ~ +150 C Tstg Storage temperature ~55 ~ +150 C _ Weight Typical value 1.2 g 9 MITSUBISHI 3-97 ELECTRICMITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Teh = 25C) Symboi Parameter Test conditions - Limits Unit Min. Typ. Max V (BR) DSS | Drain-source breakdown voltage | ID = 1mA, Vas = OV 300 _ Vv V (BR) Gss | Gate-source breakdown voltage | iG = +t00uA, Vps = OV +30 ~ _ Vv lass Gate leakage current VGS = +25V, VDS = OV _ +10 LA lpss Drain current VDS = 300V, Vas = OV _ _ 1 mA VGS (th) Gate-source threshold voltage ip = 1mA, VDS = 10V 2 3 4 Vv rDS (ON) Drain-source on-state resistance | Ip = 10A, VGs = 10V _ 0.25 0.33 Q VoOS (ON) | Drain-source on-state voltage | io = 10A, Vas = 10V _ 25 3.3 v lyts | Forward transfer admittance _| io = 10A, Vos = 10V 8.5 13.0 s Ciss Input capacitance = 1400 _ pF Coss Output capacitance Vbs = 25V, VGs = OV, f = 1MHz _ 280 _ pF Crss Reverse transfer capacitance _ 55 _ pF td (on) Turn-on delay time _ 25 ns tr Rise time _ 50 _ ns - Vpbp = 150V, lo = 10A, VGS = 10V, RGEN = RGS = 500 ta (off) Turn-off delay time _ 150 _ ns tt Fall time _ 65 _ ns Vspb Source-drain voltage Ig = 10A, Vas = OV _ 15 2.0 v Rith (ch-c) | Thermal resistance Channel to case _ _ 0.83 CAN tr Reverse recovery time Is = 20A, dis/dt = -100A/us _ _ 150 ns PERFORMANCE CURVES POWER DISSIPATION Pp (W) POWER DISSIPATION DERATING CURVE 200 160 120 80 40 0 50 100 CASE TEMPERATURE Tc (C) DRAIN CURRENT Ip (A) oo To = 25C Pulse 10-1 150 200 tw=10us 1 MAXIMUM SAFE OPERATING AREA 10 23 57101 23 67102 23 57103 DRAIN-SOURCE VOLTAGE Vps (V) MITSUBISHI ELECTRICDRAIN CURRENT. ID (A) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN CURRENT Jp (A) 50 40 30 20 10 0 8 0 4 8 OUTPUT CHARACTERISTICS (TYPICAL) Pp = 150W 1 ; To = 25C = 20V Pulse Test 74 10V => < \ = a ke Zz ia x ia 5 oO z <= x font 10 20 30 AO 50 DRAIN-SQURCE VOLTAGE Vos (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) \ Te = 25C Pulse Test wy a . o4 ip = 40A & 2 32 og wy zS a z oe 28 <= ce 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) Te = 26C Vbs = BOV Pulse Test FORWARD TRANSFER ADMITTANCE | yis |(S) 12 20 16 GATE-SOURCE VOLTAGE Vas (V) MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) VGs=20V 10V 6V Te = 25C Pulse Test 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) C= 25C Pulse Test 0 10? 23 57100 23 5710' 23 57107 DRAIN CURRENT 1p (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) Qo Bo VbS = 10V Pulse Test Nw ns Te = 25C 10 ors 75C 3 2 125C 10 1009 23 65710! 23 5 7 104 DRAIN CURRENT Ip (A) ate MITSUBISH ELECTRIC 3-79MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 5 4 ch = 25C Vbb = 150V 2 _ Ves = 10V & 103 = RGS = 250 w & 7 Eo 3 - _ 3 ao 7 & 3 5 = 3h Tch = 25C 2 f= 1MHz ro Let : - PL 23 3710023 5710123 5710223 10 223 5710 23 5 710 DRAIN-SOURCE VOLTAGE Vps (V) DRAIN CURRENT Ip (A) GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE VS.GATE CHARGE FORWARD CHARACTERISTICS (TYPICAL) (TYPICAL) = Toh = 25C ra |f ves = ov % Ip = 20A _ To. 128C ; ulse Test << > 2 S < 5 b i 5 c r > 3 WW 5 & 8 2 hia 2 2 & 3 Fea a < o . 0 20 40 60 BC 100 0 08 16 24 32 46 GATE CHARGE Qg (nC) SOQURCE-DRAIN VOLTAGE Vso (V} _ ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS. o|e CHANNEL TEMPERATURE CHANNEL TEMPERATURE =) A (TYPICAL) (TYPICAL) S| Z 10! @|@ 7PVGS= 10Vv Vos = 10V = 5b 10 = 1/2Ip Q lb=1ImA 8] ww Pulse Test 6 2 2 3 ax Sl|E 2 r= w| 2 ra | 6 ES ao | > 16 Lu w ius Ow alk 7 Co Ee |< at 2/8 oF 6/2 iO w 3 E> zQ 2 S > 2138 2) H 10-1 GO J Z/z 0 50 100 150. 200 250 -0 0 50 100 150 a; s a}a CHANNEL TEMPERATURE Teh (C) CHANNEL TEMPERATURE Tch (C) 3 - 80 MITSUBISHI ELECTRICDRAIN-SOURCE BREAKDOWN VOLTAGE _V (BR) 085 (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) trr (eS) REVERSE RECOVERY TIME BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Ves = OV lo=1mA 0.4 ~80 9 50 100 150 CHANNEL TEMPERATURE Tech (C) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 {Ss 3 102 10! 7 7 5 5 3 3 2 2 101 I 10 wm Toh = 25C 2 ~~ Ton = 150C]? 5 5 wro62 3 5710 23 6 710 SOURCE CURRENT dis/dt (A/us) = oa we REVERSE RECOVERY TIME tr (us) 10! nw anS nw a2 Irv (A) = ? ROO Oln! = 2 REVERSE RECOVERY CURRENT TRANSIENT THERMAL IMPEDANCE = 2th (ch-c) (C/W) 102 MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 = 7 [ dsidt = ~100A 7: =| VSS = OV 5 Vop = 150V 5 3 3 og 2 2 oO io & 7 7 5 5 8 tc 3 3 ow 2 Ttr=25 1? eon Ton = 180C , 2 100 ie 23246 710' 23 5 7 102 SOURCE CURRENT 1s (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS _ iw T BM aT | DD: 0-2 10423 5710323 5710223 571023 5710823 5710' 23 5710 PULSE WIDTH tw (s) _ MITSUBISHI 3-81 ELECTRIC