1
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 250
VDSX 220
Continuous Drain Current ID34
Pulsed Drain Current ID(puls] ±136
Gate-Source Voltage VGS ±30
Maximum Avalanche current IAR 34
Non-Repetitive EAS 665.7
Maximum Avalanche Energy
Repetitive EAR 27
Maximum Avalanche Energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt 5
Peak Diode Recovery -di/dt -di/dt 100
Max. Power Dissipation PD270
2.02
Operating and Storage Tch +150
Temperature range T stg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3927-01L,S,SJ
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero Gate Voltage Drain Current IDSS VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=17A VGS=10V
ID=17A VDS=25V
VCC=48V ID=17A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
mΩ
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.463
75 °C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MH
VCC=125V
ID=34A
VGS=10V
IF=34A VGS=0V Tch=25°C
IF=34A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
A/µs
W
°C
°C
250
3.0 5.0
25
2.0
100
85 110
13 26
1850 2800
220 330
21 32
20 30
19 29
56 85
19 29
56 85
20 30
19 29
1.00 1.50
140 250
0.5 1.25
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super F AP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 250V
Note *4
Note *5
Tc=25°C
Ta=25°C
=
<
Features
High speed switching Low on-resistance
No secondary breakdown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
=
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=14A,L=5.71mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt=100A/µs,VCC BVDSS,Tch 150°C
Note *5:IF -ID, dv/dt=5kV/µs,VCC BVDSS,Tch 150°C
=
<
=
<=
<
=
<=
<
=
<
See to P4
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2
Characteristics
2SK3927-01L,S,SJ FUJI POWER MOSFET
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0246810121416
0
10
20
30
40
50
60
70
80
90
100
20V
10V
7.5V
7V
6.5V
ID [A]
VDS [V]
Typical Output Characteristi cs
ID=f(VDS):80 µs pulse test,Tch=25°C
VGS=6V
012345678910
0.01
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
0 102030405060708090
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
-50 -25 0 25 50 75 100 125 150
0.00
0.05
0.10
0.15
0.20
0.25
0.30
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resist ance
RDS(on)=f(Tch):ID=17A,VGS=10V
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3
2SK3927-01L,S,SJ FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
7
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
VGS(th) [V]
Tch [ °C]
0 20 40 60 80 100 120 140
0
4
8
12
16
20
24
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=34A,Tch=25°C
VGS [V]
200V
250V
Vcc= 50V
10-1 100101102103
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capaci tance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10-1 100101102
100
101
102
103
Typical Switching Cha ra cteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
IAS=14A
IAS=21A
IAS=34A
EAV [mJ]
starting Tch [°C]
Maxi mum Avalanche Energy vs. starting Tch
E(AV)=f(s tart ing Tch) :Vc c=48V,I( AV)<=34A
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2SK3927-01L,S,SJ FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
Outline Drawings (mm)
Type(S) Type(SJ)
1 2 3 1
2
3
Type(L)
1
2
3
1 2 3
4
4
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Thermal Im pedanc e
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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