BCR16PM-12LC Triac Medium Power Use REJ03G1262-0100 Rev.1.00 Sep.26.2005 Features * * * * * The product guaranteed maximum junction temperature 150C. * Insulated Type * Planar Passivation Type IT (RMS) : 16 A VDRM : 600 V IFGTI, IRGTI, IRGTIII : 50 mA Viso : 1500 V Outline RENESAS Package code: PRSS0003AA-B (Package name: TO-220F(2) ) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Motor control, heater control Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00, Sep.26.2005, page 1 of 7 Symbol VDRM VDSM Voltage class 12 600 700 Unit V V BCR16PM-12LC Parameter RMS on-state current Symbol IT (RMS) Ratings 16 Unit A Surge on-state current ITSM 96 A I2 t 38 A2s PGM PG (AV) VGM IGM Tj Tstg -- Viso 5 0.5 10 2 - 40 to +150 - 40 to +150 2.0 1500 W W V A C C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360 conduction, Tc = 73C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. -- -- Typ. -- -- Max. 2.0 1.75 Unit mA V Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 25 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT -- -- -- -- -- -- 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT -- -- -- -- -- -- 50 50 50 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD Rth (j-c) 0.2 -- -- -- -- 3.5 V C/W Gate non-trigger voltage Thermal resistance Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10 -- -- V/s Tj = 125C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 8 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00, Sep.26.2005, page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR16PM-12LC Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 10 7 Tj = 25C 5 3 2 120 Surge On-State Current (A) On-State Current (A) 2 101 7 5 3 2 0 10 7 5 3 2 10 -1 2 3 5 7 10 1 2 3 5 7 10 VGM = 10 V PGM = 5 W VGT = 1.5 V PG(AV) = 0.5 W IGM = 2 A 0 10 7 5 3 2 IFGT I IRGT I IRGT III Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Trigger Current vs. Junction Temperature 103 7 5 2 Typical Example IRGTIII 3 2 102 7 5 3 2 IFGTI IRGTI 101 -60 -40-20 0 20 40 60 80 100120 140160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 3 10 7 5 Typical Example 3 2 2 10 7 5 3 2 1 10 -60 -40-20 0 20 40 60 80 100120140160 Junction Temperature (C) Sep.26.2005, page 3 of 7 Transient Thermal Impedance (C/W) Gate Voltage (V) 20 Gate Characteristics (I, II and III) VGD = 0.2 V Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 40 Conduction Time (Cycles at 60Hz) 10-1 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rev.1.00, 60 On-State Voltage (V) 1 10 7 5 3 2 80 0 0 10 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 102 7 5 3 2 100 102 2 3 5 7103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 Conduction Time (Cycles at 60Hz) BCR16PM-12LC 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 1 2 4 On-State Power Dissipation (W) 20 360 Conduction Resistive, 15 inductive loads 10 5 0 0 5 2 4 6 8 10 12 14 16 18 20 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 140 120 100 80 60 40 360 Conduction 20 Resistive, inductive loads 2 4 6 160 Ambient Temperature (C) Case Temperature (C) 3 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710 0 0 120 120 x 120 x t2.3 100 100 x 100 x t2.3 80 60 x 60 x t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads 0 0 8 10 12 14 16 18 20 All fins are black painted aluminum and greased 140 Natural convection 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (C) 25 No Fins 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Rev.1.00, Maximum On-State Power Dissipation 3 Sep.26.2005, page 4 of 7 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Transient Thermal Impedance (C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Typical Example -60 -40-20 0 20 40 60 80 100120140160 Junction Temperature (C) BCR16PM-12LC 103 7 5 Latching Current (mA) Typical Example 3 2 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120140 160 103 7 5 3 2 Distribution T2+, G- Typical Example 102 7 5 3 2 101 7 T2+, G+ 5 Typical Example 3 2 T2-, G- Typical Example 100 -60 -40 -20 0 20 40 60 80 100 120 140160 Junction Temperature (C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125C) 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100120 140160 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Junction Temperature (C) 160 Typical Example Tj = 125C 140 120 III Quadrant 100 80 I Quadrant 60 40 20 0 1 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150C) Commutation Characteristics (Tj = 125C) 160 140 120 Typical Example Tj = 150C III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/s) Rev.1.00, Latching Current vs. Junction Temperature Sep.26.2005, page 5 of 7 Critical Rate of Rise of Off-State Commutating Voltage (V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) Holding Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time III Quadrant 1 10 7 5 I Quadrant Minimum Characteristics Value 3 2 Typical Example 0 Tj = 125C, IT = 4 A = 500 s, VD = 200 V f = 3 Hz 10 7 0 10 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) BCR16PM-12LC Gate Trigger Current vs. Gate Current Pulse Width 7 5 Typical Example Tj = 150C 3 IT = 4 A 2 = 500 s VD = 200 V 1 f = 3 Hz Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Commutation Characteristics (Tj = 150C) Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time III Quadrant 10 7 5 I Quadrant 3 2 0 10 7 0 10 2 3 5 7 10 1 2 3 5 7 10 2 Gate Trigger Characteristics Test Circuits 6 A 6V 330 V V Test Procedure II Test Procedure I 6 A 6V V 330 Test Procedure III Rev.1.00, Sep.26.2005, A 6V page 6 of 7 Typical Example IRGT III IRGT I 3 2 IFGT I 102 7 5 3 2 1 10 0 10 2 3 5 7 10 1 2 3 5 7 10 Gate Current Pulse Width (s) Rate of Decay of On-State Commutating Current (A/ms) 6 103 7 5 330 2 BCR16PM-12LC Package Dimensions JEITA Package Code SC-67 Package Name TO-220F(2) RENESAS Code PRSS0003AA-B Previous Code MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 3.2 0.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name Lead form Plastic Magazine (Tube) 50 Type name - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Sep.26.2005, page 7 of 7 Standard order code example BCR16PM-12LC BCR16PM-12LC-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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