2011-07-13
Rev. 2.5 Page 1
SN7002W
SIPMOS Small-Signal-Transistor Product Summary
VDS 60 V
RDS(on) 5Ω
ID0.23 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
PG-SOT-323
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
sSN
sSN
Type Package Pb-free Tape and Reel Information
SN7002W PG-SOT-323 Yes H6327: 3000 pcs/reel
SN7002W PG-SOT-323 Yes H6433: 10000 pcs/reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
0.23
0.18
A
Pulsed drain current
TA=25°C
ID puls 0.92
Reverse diode dv/dt
IS=0.23A, VDS=48V, di/dt=200A/µs, Tjmax=150°C
dv/dt6kV/µs
Gate source voltage VGS ±20 V
ESD class (JESD22-A114-HBM) 0 (<250V)
Power dissipation
TA=25°C
Ptot 0.5 W
Operating and storage temperature Tj , Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
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Rev. 2.5 Page 2
SN7002W
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - ambient
at minimal footprint RthJS - - 250 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=250µA
V(BR)DSS 60 - - V
Gate threshold voltage, VGS = VDS
ID=26µA
VGS(th) 0.8 1.4 1.8
Zero gate voltage drain current
VDS=60V, VGS=0, Tj=25°C
VDS=60V, VGS=0, Tj=150°C
IDSS
-
-
-
-
0.1
5
µA
Gate-source leakage current
VGS=20V, VDS=0
IGSS - - 10 nA
Drain-source on-state resistance
VGS=4.5V, ID=0.2A
RDS(on) -4.1 7.5 Ω
Drain-source on-state resistance
VGS=10V, ID=0.23A
RDS(on) -2.3 5
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Rev. 2.5 Page 3
SN7002W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=0.18A
0.1 0.21 -S
Input capacitance Ciss VGS=0, VDS=25V,
f=1MHz
-34 45 pF
Output capacitance Coss -7.2 9.6
Reverse transfer capacitance Crss -34.5
Turn-on delay time td(on) VDD=30V, VGS=10V,
ID=0.23A, RG=6Ω
-2.4 3.6 ns
Rise time tr-2.8 4.2
Turn-off delay time td(off) -6 9
Fall time t
f
-8.5 12.75
Gate Charge Characteristics
Gate to source charge Qgs VDD=48V, ID=0.23A -0.11 0.17 nC
Gate to drain charge Qgd -0.42 0.63
Gate charge total QgVDD=48V, ID=0.23A,
VGS=0 to 10V
-11.5
Gate plateau voltage V(plateau) VDD=48V, ID = 0.23 A -3.4 -V
Reverse Diode
Inverse diode continuous
forward current ISTA=25°C - - 0.23 A
Inv. diode direct current, pulsedISM - - 0.92
Inverse diode forward voltage VSD VGS=0, IF=0.23A -0.85 1.2 V
Reverse recovery time trr VR=30V, IF=lS,
diF/dt=100A/µs
-10.8 16.2 ns
Reverse recovery charge Qrr -3.2 4.8 nC
2011-07-13
Rev. 2.5 Page 4
SN7002W
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
W
0.55 SN7002W
Ptot
2 Drain current
ID = f (TA)
parameter: VGS≥ 10 V
0 20 40 60 80 100 120 °C 160
TA
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.22
A
0.26 SN7002W
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
10 0 10 1 10 2
VVDS
-3
10
-2
10
-1
10
0
10
1
10
A
SN7002W
ID
R DS(on) = V DS / I D
DC
10 ms
1 ms
100 µs
tp = 25.0µs
4 Transient thermal impedance
ZthJA = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
SN7002W
ZthJA
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
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Rev. 2.5 Page 5
SN7002W
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C, VGS
00.5 11.5 22.5 33.5 4V5
VDS
0
0.1
0.2
0.3
0.4
A
0.6
ID
10
7V
6V
5V
4.5V
4V
3.7V
3.5V
3.0V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
00.1 0.2 0.3 0.4 0.5 A0.7
ID
0
0.75
1.5
2.25
3
3.75
4.5
5.25
6
Ω
7.5
RDS(on)
3.1V
3.5V
3.7V
4.1V
4.5V
5V
6V
7V
10V
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
00.5 11.5 22.5 33.5 V4.5
VGS
0
0.1
0.2
0.3
A
0.5
ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
00.1 0.2 0.3 0.4 A0.6
ID
0
0.05
0.1
0.15
0.2
S
0.3
gfs
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(.) Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 0.23 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
1
2
3
4
5
6
7
8
9
10
11
12
Ω
15 SN7002W
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS; ID =26µA
-60 -20 20 60 100 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
2.2
VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
0 5 10 15 20 V30
VDS
0
10
1
10
2
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
00.4 0.8 1.2 1.6 22.4 V3
VSD
-3
10
-2
10
-1
10
0
10
A
SN7002W
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2011-07-13
Rev. 2.5 Page 7
SN7002W
13 Typ. gate charge
VGS = f (QG); parameter: VDS ,
ID = 0.16 A pulsed, Tj = 25 °C
00.2 0.4 0.6 0.8 11.2 1.4 nC 1.7
QG
0
2
4
6
8
10
12
V
16 SN7002W
VGS
0.2 VDS max
0.5 VDS max
0.8 VDS max
14 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 °C 180
Tj
54
56
58
60
62
64
66
68
V
72 SN7002W
V(BR)DSS
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SN7002W
