Data Sheet Schottky Barrier Diode RB451F Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.3 2.00.2 0.15 0.05 0.9MIN. 0.65 1.250.1 2.10.1 (3) Features 1) Small mold type. (UMD3) 2) Low VF 3) High reliability. 1.6 0.3 0.1 Each lead has same dimensions 0.8MIN 00.1 (1) 0.65 UMD3 0.1Min (2) 0.65 0.7 0.1 1.30.1 0.9 0.1 Structure ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory) Construction Silicon epitaxial planer Taping specifications (Unit : mm) 1.550.05 2.00.05 0.30.1 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz1cyc) Junction temperature Storage temperature Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0.50.05 4.00.1 Limits 40 40 100 1 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg 2.40.1 8.00.2 00.1 2.40.1 2.250.1 0 5.50.2 3.50.05 1.750.1 4.00.1 1.250.1 Unit V V mA A C C Conditions Symbol VF 1 VF 2 IR Min. Typ. Max. Unit - - 0.55 0.34 30 V V A IF=100mA IF=10mA VR=10V Ct - 6.0 - pF VR=10V , f=1MHz 1/3 2011.04 - Rev.B Data Sheet RB451F 10000 REVERSE CURRENT:IR(uA) Ta=25 1 Ta=-25 0.1 0.01 f=1MHz 1000 Ta=75 100 Ta=25 10 1 Ta=-25 0.1 100 200 300 400 500 600 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 450 440 430 290 280 270 VF DISPERSION MAP 15 10 5 AVE:0.928uA 0 IR DISPERSION MAP 12 10 8 6 4 AVE:5.81pF 30 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 14 1cyc Ifsm 15 8.3ms 10 5 AVE:5.50A Ct DISPERSION MAP 20 15 10 5 AVE:6.20nS 0 trr DISPERSION MAP IFSM DISRESION MAP 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 Ifsm 8.3ms 8.3ms 1cyc 5 0 1000 Ifsm t 10 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 0 0 0.1 20 20 Ta=25 f=1MHz VR=10V n=10pcs 16 Ta=25 VR=10V n=10pcs 25 VF DISPERSION MAP 20 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 260 18 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS AVE:281.5mV 420 10 0 35 Ta=25 IF=10mA n=30pcs 300 AVE:439.5mV PEAK SURGE FORWARD CURRENT:IFSM(A) 10 15 20 25 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS REVERSE CURRENT:IR(uA) 460 2 5 310 Ta=25 IF=100mA n=30pcs FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 470 10 1 0.01 0 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) FORWARD CURRENT:IF(mA) Ta=75 10 100 Ta=125 Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 100 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 2/3 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=10mA 10 1ms IF=100mA time 300us 1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 2011.04 - Rev.B Data Sheet RB451F 0.1 0.07 REVERSE POWER DISSIPATION:PR (W) DC D=1/2 0.06 Sin(180) 0.04 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 FORWARD POWER DISSIPATION:Pf(W) 0.3 0.06 0.05 0.04 Sin(180) 0.03 D=1/2 0.02 DC 0.01 0 0 0 0.1 0.2 0.2 DC Io t T VR D=t/T VR=15V Tj=125 0.15 D=1/2 0.1 Sin(180) 0.05 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0A 0V 0.25 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0A 0V 0.25 0.2 Io t DC 0.15 T VR D=t/T VR=15V Tj=125 D=1/2 0.1 0.05 Sin(180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A