©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002
FJN598J
Si N-channel Junction FET
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
IDSS Classification
Symbol Parameter Ratings Units
VGDO Gate-Drain Voltage -20 V
IGGate Current 10 mA
IDDrain Current 1 mA
PDPower Dissipation 150 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
BVGDO Gate-Drain Breakdown Volt age IG= -100uA -20 V
VGS(off) Gate-Source Cut-off Voltage VDS=5V, ID=1µA -0.6 -1.5 V
IDSS Drain Current VDS=5V, VGS=0 100 350 µA
lYFSl Forward Transfer Admittance VDS=5V, VGS=0, f=1MHz 0.4 1.2 ms
CISS Input Capacitance VDS=5V, VGS=0, f=1MHz 3.5 pF
CRSS Output Capacitance VDS=5V, VGS=0, f=1MHz 0.65 pF
Classification A B C
IDSS(µA) 100 ~ 170 150 ~ 240 210 ~ 350
FJN598J
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
1. Source 2. Gate 3. Drain
TO-92
1
©2002 Fairchild Semiconductor Corporation
FJN598J
Rev. B1, November 2002
Typical Characteristics
Figure 1 . ID-VDS Figure 2. ID-VDS
Figur e 3 . ID-VGS Figure 4.
yFS
-IDSS
Figur e 5 . V GS(off)-IDSS Figur e 6 . C ISS-VDS
012345678910
0
50
100
150
200
250
300
350
400
450
500
VGS = - 0.3 V
IDSS = 200µA
VGS = 0
VGS = -0.1 V
VGS = -0.2 V
VGS = -0.4V
ID[µA], DRAIN CURRENT
VDS[V], DRAIN-SOURCE VOLTAGE
012345678910
0
100
200
300
400
500
600
700
800
900
1000
VGS = -0.6V
VGS = -0.5V
ID[µA], DRAIN CURRENT
VDS[V], DRAIN-SOURCE VOLTAGE
IDSS = 500µA
VGS = -0.4V
VGS = -0.3V
VGS = -0.2V
VGS = -0.1V
VGS = 0
-1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VDS = 5V
ID[mA], DRAIN CURRENT
VGS[V], GATE-SOURCE VOLTAGE
0.1 1
0.1
1
10
VDS = 5V
VGS = 0
f=1kHz
lFSl [ms], FORW ARD TRANSFER AD MITTANCE
IDSS[mA], DRAIN CURRENT
0.1 1
0.1
1
10
-
-
-VDS = 5V
ID = 1µA
VGS(off)[V], GATE-SOURCE CUT-O FF VOLTAG E
IDSS[mA], DR AIN CURRENT
110
1
10
100
CISS[pF], INPUT CAPACITANCE
VDS[V], DRAIN-SOURCE VOLTAGE
©2002 Fairchild Semiconductor Corporation
FJN598J
Rev. B1, November 2002
Typical Characteristics (Continued)
Figur e 7 . C RSS-VDS Figure 8. PD-TA
Figur e 9 . V NO-IDSS Figure 10. ZO-IDSS
110
0.1
1
10
VGS = 0
f = 1MHz
Crss[pF], OUTPUT CAPA CITANCE
VDS[V], DRAIN-SOURCE VOLTAGE
0 25 50 75 100 125 150
0
25
50
75
100
125
150
175
200
PD[mW], POWER DISSIPATION
Ta[oC], AMBIENT TEMPERATURE
10 100 1000
-120
-118
-116
-114
-112
-110 VNO:VCC =4.5V
V I = 0, A CURVE
RL = 1K Ω
IDSS:VDS=5V
VNO[dB], OUTPUT NOISE VOLTAGE
IDSS[µA], DRAIN CURRENT
10 100 1000
200
300
400
500
600
700 ZO:VCC =4.5V
VIN = 10mV
f = 1kH z
IDSS:VDS=5V
ZO[Ω], OUTPUT R ESISTANCE
IDSS[µA], DRAIN CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
FJN598J
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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