QS043-402-203722/5 2 3-M6 110 93 0 .2 5 11 14 14 11 14 108 93 0 .2 5 14 11 14 11 14 4-O6.5 3-M6 4 6 5 4 25 25 9 16 9 25 24 24 16 9 16 16 9 16 8 23 LABEL 7 7 23 LABEL 30 +1.0 - 0.5 +1.0 30 - 0.5 8 16 25 7 3 2 15 6 48 0 .2 5 5 5(E1) 4(G1) 1 6 6 62 11 13 20 7 3 2 15 6 62 0 .2 5 1 6 (C1) 3 80 13 20 (E2) 2 11 (C2E1) 1 4-O 6.5 7(G2) 6(E2) PDMB300BS12 PDMB300BS12C Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal , . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 300A,= 15V . . ate-mitter hreshold oltage = 5V,= 300mA . . nput apacitance = 10V,= 0V,= 1MH 18,900 witching ime = 600V L= 2.0 G= 5.1 = 15V . . . . . . . . ise urn-on all urn-off ime ime ime ime orward urrent eak orward oltage everse ecovery ime . . . = 300A,= 0V . . = 300A,= -10V i/t= 600A/s . . . . hermal mpedance iode th(j-c) Junction to Case . . . 01 QS043-402-203723/5 Fig.1- Output Characteristics (Typical) 12V VGE=20V T C=125C 600 VGE=20V 11V 15V 10V 400 300 9V 200 8V 12V 11V 15V 500 Collector Current I C (A) 500 Collector Current I C (A) Fig.2- Output Characteristics (Typical) T C=25C 600 10V 400 300 9V 200 100 8V 100 7V 7V 0 0 1 2 3 4 0 5 0 1 Collector to Emitter Voltage VCE (V) 600A Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 300A 12 10 8 6 4 2 0 4 8 12 16 300A 10 8 6 4 2 0 4 8 300000 14 100000 12 500 10 8 VCE =600V 6 400V 200 4 200V 100 0 0 500 1000 1500 20 2000 VGE=0V f=1MHZ T C=25C 30000 Capacitance C (pF) 600 300 16 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) RL =2.0( TC=25C 400 12 Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 700 600A 12 0 20 IC=150A 14 Gate to Emitter Voltage VGE (V) 800 5 T C=125C 16 14 0 4 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C IC=150A 3 Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 2 Cies 10000 Coes 3000 1000 Cres 300 2 100 0 2500 30 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage VCE (V) 01 QS043-402-203724/5 Fig.7- Collector Current vs. Switching Time (Typical) 2 tf 0.8 tON 0.4 tr(V CE) 0 50 100 150 200 250 0.3 ton 0.1 tr (VCE) 3 30 Fig.10- Series Gate Impedance vs. Switching Time VCC=600V RG=5.1( VGE=15V T C=125C Inductive Load tf tON 0.1 tr(Ic) VCC=600V IC=300A VGE=15V T C=125C Inductive Load 5 Switching Time t (s) 1 0.03 2 1 toff 0.5 ton 0.2 tf 0.1 tr (IC ) 0.05 0 10 Fig.9- Collector Current vs. Switching Time 10 0.3 tf Series Gate Impedance RG (() tOFF Switching Time t (s) toff Collector Current IC (A) 3 50 100 150 200 250 300 0.02 350 3 10 30 Collector Current IC (A) Series Gate Impedance R G (() Fig.11- Collector Current vs. Switching Loss Fig.12- Series Gate Impedance vs. Switching Loss 120 50 300 VCC=600V RG=5.1( VGE=15V T C=125C Inductive Load 100 Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 1 0.03 300 10 0.01 VCC=600V IC=300A VGE=15V T C=25C Resistive Load 3 Switching Time t (s) tOFF 1.2 0 5 VCC=600V RG=5.1( VGE=15V T C=25C Resistive Load 1.6 Switching Time t (s) Fig.8- Series Gate Impedance vs. Switching Time (Typical) EON 80 60 EOFF 40 ERR 20 0 VCC=600V IC=300A VGE=15V T C=125C Inductive Load EON 100 EOFF 30 ERR 10 0 100 200 300 400 500 3 Collector Current IC (A) 10 30 Series Gate Impedance RG (() 01 QS043-402-203725/5 Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 600 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) 500 T C=125C 400 300 200 100 0 1 2 3 trr 300 100 IRrM 30 10 4 0 600 1200 Forward Voltage VF (V) 1800 2400 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 2000 RG=5.1(, VGE=15V, T C=125C 1000 300 Collector Current I C (A) 0 100 30 10 3 1 0.3 0.1 0 200 400 600 800 1000 1200 1400 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 1 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) T C=25C IF=300A T C=25C T C=125C 3x10 -1 1x10 FRD -1 IGBT 3x10 -2 1x10 -2 3x10 -3 T C=25C 1x10 -3 1 Shot Pulse 3x10 -4 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) 01