TLP651 GaA@As IRED & PHOTO-IC DIGITAL LOGIC GROUND ISOLATION. Unit in mm LINE RECEIVER. MICROPROCESSOR SYSTEM INTERFACES. 8 5 1 mo fom C1 - SWITCHING POWER SUPPLY FEEDBACK CONTROL. | * ANALOG SIGNAL ISOLATION. | < [SSS The Toshiba TLP651 consists of a GaARAs high-output 9664025 2624025 light emitting diode and a high speed detector of one wo A | | 3 { chip photo diode-transistor. This unit is 8~lead DIP | ' | 401 package. 1B mi 025-005 TLP651 has internal base connection. This base pin as = 1.72.85 ~ 880 should be used for analog application or enable 2542025 % operation. If base pin is open, output signal will be JEDEO 7 noisy by enviromental condition. For this case, TLP650 ELAS _ is suitable. TOSHIBA 11-1001 - Isolation Voltage : 5000Vrms Min. ; Switching Speed : tpHL=0. 3us(Typ.) PIN CONFIGURATION (TOP VIEW) tpLH=0.5us (Typ.) 1: NC (RL=1. 9k) 1 p 2: ANODE - TTL Compatible Ty J+ 3: CATHODE . UL Recognized : File No. 67349 3 D6 a RITTER aq Hs 6: COLLECTOR 7: BASE 8: Voc SCHEMATIC Tec - Voc Ip | Ip o a 0 V3 2 ? vef To -__ Vo 3 6 502 TLP651 MAXIMUM RATINGS (Ta=25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current (Note 1) IF 25 mA Pulse Forward Current (Note 2) - IFp 50 mA & | Peak Transient Forward Current (Note 3) IFPT 1 A Reverse Voltage VR 5 Diode Power Dissipation (Note 4) Pp 45 mW Output Current Io 8 mA Peak Output Current lop 16 mA ce, | Output Voltage Vo -0.5~15 Vv E Supply Voltage Vcc -0.5~15 V fe Base Current IB 5 mA . Emitter-Base Reverse Voltage VEB 5 v Output Power Dissipation (Note 5) Po 100 mW Operating Temperature Range Topr -55~100 C Storage Temperature Range Tstg -55~125 C Lead Solder Temperature (10 sec.) (Note 6) Tsol 260 C Isolation Voltage (AC, 1 min., R.H<60%) (Note 7) BVS 5000 Vems Note 1 : Derate 0.8mA above 70C Note 2 : 50% duty cycle, lms pulse width. Derate 1.6mA/C above 70C. Note 3 : Pulse widthSlus, 300pps. Note 4 : Derate 0.9mW/C above 70C. Note 5 : Derate 2mW/C above 70C. Note 6 : Soldering portion of lead : up to 2mm from the body of the device. Note 7 : Device considered a two terminal device : Pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together. 503 TLP651 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.| UNIT Forward Voltage VE IF=16mA - 1.65 85 Vv Forward Voltage aVRe/ _ aq | Temperature Coefficient 4Ta Tp=16mA ~2 mv /C "3 Reverse Current Ir VR=5V - - 10 HA Capacitance Between _ - _ _ Terminal cr Vp=0, =1MHz 45 pF IOH(1) | Ir=OmA, Voc=Vo=5.5V - 3 500 nA High Level Output Ton(2) | IF=OmA, Voc=Vo=15V - - 5 & |Current & Tr=O0mA, Vcc=Vo=l5V uA QO Tou - - 250 eB Ta=70C | High Level Supply _ - _ Voltage IccH IF=OmA, Vcec=15V 0.01 1 uA Ip=16mA Ta=25C 10 30 ~ Current Transfer Ratio Io/IF | Voc=4.5V Rank:0] 19 30 % Vg=0.4V Ta=0~70C 5 - - a | Rank:0 15 - - a IF=l6mA, Vcc=4.5V 3 |Low Level Output Voltage VOL - - 0.4 v o Io=1.1lmA(rank 0:10=2.4mA) : Shana R.H. <60%, Vs=500Vpc _ 12 Isolation Resistance Rs (Note 7) 10 a Capacitance Between _ _ Input to Output Cs Vs=0, f=1MHz (Note 7) - 0.8 - pF SWITCHING CHARACTERISTICS (Ta=25C, Vec=5V) TEST CHARACTERISTIC SYMBOL | CIR- TEST CONDITION MIN.| TYP.| MAX UNIT CULT Propagation Delay Time toHL IF=0 + 16mA, Vcc=5V Rp =4. 1ka ~ 0.2 us (HL) P : [Rank O:RL=1.9ka] - | 0.3 Propagation Delay Time Ip=16 > 0mA,Voc=5V,Rp=4.1kaQ] - 1. 2.0 (L-H) UpLH us [Rank O:Rp=1.9ka | - | 0.5 | 1.2 Common Mode Transient IF=OmA, VcoM=200Vp-p Immunity at Logic High CMH RL=4.1ka - 400 - |V/us Output (Note 8) (Rank O:RL=1. 9k) 2 Common Mode Transient Ip=l6mA, VcmM=200Vp-p Immunity at Logic Low CML Rp=4.1ka - |-1000] - |V/us Output (Note 8) (Rank O:RL=1.9kQ) 504 TLP651 Note 8 : CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (Vg <0.8V). CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state (Vo >2.0V). Note 9 : Maximum electrostatic discharge voltage for any pins : lO00V(C=200pF, R=0). TEST CIRCUIT 1: Switching Time Test Circuit PULSE INPUT Tp Voo =5V Ir | O > | PW= 10046 2 ao al Ry y DUTY RATIO=1,710 E: om 5 Ip MONITOR 3 6 Yo OUTPUT 15Vv 15Vv a [4] 5 MON [TOR You a UpHL tpLH t t TEST CIRCUIT 2: Common Mode Noise Immunity Test Circuit 200V Yoo =5V - 90% ts Gl a} tos \ z +. o_{a rp] eR SJ ov ty tr o| 3 6 }- +0 Vo OUTPUT a MONITOR Vo 5v (Ip = OmaA \ v F ) av () YS PULSE GENERATOR 717 aey Z9=500 Yo vo, (Ip=16ma) _ 160() __160(V) OM = tr Cue) ' OML= te (He) 505 TLP651 100 on < & 10 fe a b a % 1 5 Oo = Ol mm 3 & aol ag 500 m 300 < a oS : 3 mt 100 10 HIGH LEVEL OUTPUT CURRENT Ip Ve 10 862 Le 18 FORWARD VOLTAGE Vp (Vv) Tou(i) Ta 2 4 AMBIENT TEMPERATURE Ta (C) FORWARD VOLTAGE TEMPERATURE AVp/dTa (V/C) COEFFICIENT Ig (mA) OUTPUT CURRENT 506 1 n an 1 n ' x Xs ' x o ' bP oo 1 it a 1 ro om he 10 a 2 a P i 0.05 0.03 aol as Os 4Vp/4Ta Ip O03 a5 i 3 FORWARD CURRENT To Ip 1 3 5 FORWARD CURRENT 5 10 Ip (ma) 10 Ip (mA)TLP651 Io Vo IoIp Ip 40 A gq & 30 oS 36 ! a a 25 3 > 32 be 20 as gi 5 15 Zp, 28 5 au 3 10 EN t BH 24 a Ip=SmA g & 3 E20 % 1 2 3 4 8 6 7 16 OUTPUT VOLTAGE Vg (V) a3 a5 FORWARD CURRENT Ip (ma) I9o/Ip Ta Vo Ip 12 6 ~ gn, 10 & 5 H \ > & 08 4 S A a6 NORMALIZED = 3 q TO: 8 a oO z a4 Ip=16 mA an) = u & Voo =4.5V 5 = 92 Vo = O4V & 1 Ta =25 9 0 40 20 o 2 4 6 8 10 Ww -M 16 AMBIENT TEMPERATURE Ta (C) FORWARD CURRENT Ip (mA) tpHL tpLH RL 5 Ip=16mA tpLH eI Vec=5V HN =o Ta =25C nd 4 a 1 ag ae mo - Os Bw a3 gf as my z Ay 4 3 5 10 100 LOAD RESISTANCE Ry, (kQ) 507