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ASDL-4770
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
Data Sheet
Description
ASDL-4770 is a high performance Infrared emitter that
utilizes AlGaAs on GaAs LED technology. It is optimized
for high eciency at emission wavelength of 940nm
and is designed for applications that require high radiant
intensity, low forward voltage at wide viewing angle.
The emitter is encapsulated in Side Look package with
spherical side view lens and is matched to ASDL-6770 for
maximum sensitivity.
Features
• Side Look Package
• 940nm wavelength
• Low Forward Voltage
• Narrow Viewing Angle
• Good Mechanical and Spectral matching to ASDL-6770
Infrared Phototransistor Detector
• Lead Free and ROHS Compliant
• Available in Tape & Reel
Applications
• Industrial Infrared Monitoring Applications
• Consumer Electronics (Optical Mouse)
• Infrared Source for Optical Counters and Card Readers
• Photo-Interrupters
• On-O Switch / Beam Interruption
• Light Barriers
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Ordering Information
Part Number Lead Form Color Packaging Shipping Option
ASDL-4770-C22
ASDL-4770-C41
Straight Clear Tape & Reel
Bulk
4000pcs
20Kpcs / Carton
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Protruded resin under ange is 1.0mm (.039”) max
4. Lead spacing is measured where leads emerge from package
5. Specications are subject to change without notice
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Absolute Maximum Ratings at 25°C
Parameter Symbol Min. Max Unit Reference
Peak Forward Current IFPK 1 A 300pps
Continuous Forward Current IFDC 50 mA
Power Dissipation PDISS 75 mW
Reverse Voltage VR5 V
Operating Temperature TO-40 85 °C
Storage Temperature TS-55 100 °C
LED Junction Temperature TJ110 °C
Lead Soldering Temperature 260 °C for 5 sec
Electrical Characteristics at 25°C
Parameter Symbol Min. Typ. Max. Unit Condition
Forward Voltage VF1.2 1.6 V IFDC=20mA
Reverse Voltage VR5 V IR=100uA
Thermal Resistance,
Junction to Ambient
RqJA 350 °C/W
Optical Characteristics at 25°C
Parameter Symbol Min. Typ. Max. Unit Condition
Radiant On-Axis Intensity IE1 2.2 mW/Sr IFDC=20mA
Viewing Angle 2θ1/2 40 deg
Peak wavelength λPK 940 nm IFDC = 20mA
Spectral Width Δλ 50 nm IFDC = 20mA
Optical Rise Time tr 1 us IFPK=100mA
Duty Factor=50%
Pulse Width=10us
Optical Fall Time tf 1 us IFPK=100mA
Duty Factor=50%
Pulse Width=10us
Foward Current (mA)
Figure 5. RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT
Forward Voltage (V)
Figure 3. FORWARD CURRENT VS. FORWARD VOLTAGE Figure 4. RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE
Wavelength (nm)
Figure 1. SPECTRAL DISTRIBUTION
Forward Current (mA)
Output Power Relative To
Value at IF=20mA Relative Radiant Intensity
01.2 1.6 2.0 2.4 2.8
50
40
30
20
10
0
0 20 40 60 80 100
5.0
4.0
3.0
2.0
1.0
0
0.5 0.3 0.1 0.2 0.4 0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1040940840
10
20
30
40
50
60
Relative Radiant Intensity
Value at IF=20mA
Output Power Relative To
0 2010
oo o
80
o
90
o
70
60
o
o
50
40
o
o
30
o
0-20
0.6
0.2
0.4
0
0.8
1.0
1.2
80604020
0
Forward Current IF (mA)
Figure 2. FORWARD CURRENT VS. AMBIENT TEMPERATURE
Ambient Temperature Ta ( C)
o
100-40 0-20 20 6040 80
Ambient Temperature Ta ( C)
o
Figure 6. RADIATION DIAGRAM
Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated)
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved.
AV02-0017EN - January 22, 2007
