M392B2873GB0-CMA - Samsung Semiconductor Division

- 1 -

M392B2873GB0

M392B5670GB0

Rev. 1.01, Dec. 2010

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SPECIFICATIONS WITHOUT NOTICE.

Products and specifications discussed herein are for reference purposes only. All information discussed

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datasheet

M392B5673GB0

240pin VLP Registered DIMM

based on 1Gb G-die

78FBGA with Lead-Free & Halogen-Free

(RoHS compliant)

- 2 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

Revision History

Revision No. History Draft Date Remark Editor

1.0 - First Release Nov. 2010 - S.H.Kim

1.01 - Corrected typo. Dec. 2010 - S.H.Kim

- 3 -
datasheet DDR3 SDRAM
Rev. 1.01
VLP Registered DIMM
Table Of Contents
240pin VLP Registered DIMM  based on 1Gb G-die
DDR3 VLP Registered DIMM Ordering Information ..................................................................................................... 4
Key Features................................................................................................................................................................. 4
Address Configuration .................................................................................................................................................. 4
Registered DIMM Pin Configurations (Front side/Back side)........................................................................................ 5
Pin Description ............................................................................................................................................................. 6
ON DIMM Thermal Sensor ........................................................................................................................................... 6
Input/Output Functional Description.............................................................................................................................. 7
Pinout Comparison Based On Module Type................................................................................................................. 8
Registering Clock Driver Specification.......................................................................................................................... 9
1 Timing & Capacitance values .................................................................................................................................. 9
2 Clock driver Characteristics..................................................................................................................................... 9
Function Block Diagram:............................................................................................................................................. 10
1 1GB, 128Mx72 Module (Populated as 1 rank of x8 DDR3 SDRAMs) ................................................................... 10
2 2GB, 256Mx72 Module (Populated as 2 ranks of x8 DDR3 SDRAMs) ................................................................. 11
3 2GB, 256Mx72 Module (Populated as 1 rank of x4 DDR3 SDRAMs) ................................................................... 12
Absolute Maximum Ratings ........................................................................................................................................ 13
1 Absolute Maximum DC Ratings............................................................................................................................. 13
2 DRAM Component Operating Temperature Range .............................................................................................. 13
AC & DC Operating Conditions................................................................................................................................... 13
1 Recommended DC Operating Conditions (SSTL-15)............................................................................................ 13
AC & DC Input Measurement Levels .......................................................................................................................... 14
1 AC & DC Logic Input Levels for Single-ended Signals.......................................................................................... 14
2 VREF Tolerances.................................................................................................................................................... 15
3 AC and DC Logic Input Levels for Differential Signals .......................................................................................... 16
3.1. Differential Signals Definition ......................................................................................................................... 16
3.2. Differential Swing Requirement for Clock (CK - CK) and Strobe (DQS - DQS) ............................................. 16
3.3. Single-ended Requirements for Differential Signals ...................................................................................... 17
3.4. Differential Input Cross Point Voltage ............................................................................................................ 18
4 Slew Rate Definition for Single Ended Input Signals............................................................................................. 18
5 Slew rate definition for Differential Input Signals ................................................................................................... 18
AC & DC Output Measurement Levels ....................................................................................................................... 19
1 Single Ended AC and DC Output Levels............................................................................................................... 19
2 Differential AC and DC Output Levels ................................................................................................................... 19
3 Single-ended Output Slew Rate ............................................................................................................................ 19
4 Differential Output Slew Rate ................................................................................................................................ 20
DIMM IDD specification definition ............................................................................................................................... 21
IDD SPEC Table ......................................................................................................................................................... 23
Input/Output Capacitance ........................................................................................................................................... 25
Electrical Characteristics and AC timing ..................................................................................................................... 26
1 Refresh Parameters by Device Density................................................................................................................. 26
2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin ................................................................ 26
3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin ................................................................. 26
3.1. Speed Bin Table Notes .................................................................................................................................. 30
Timing Parameters by Speed Grade .......................................................................................................................... 31
1 Jitter Notes ............................................................................................................................................................ 37
2 Timing Parameter Notes........................................................................................................................................ 38
Physical Dimensions................................................................................................................................................... 39
1 128Mbx8 based 128Mx72 Module (1 Rank) - M392B2873GB0 ............................................................................ 39
1.1. x72 DIMM, populated as one physical rank of x8 DDR3 SDRAMs ................................................................ 39
2 128Mbx8 based 256Mx72 Module (2 Ranks) - M392B5673GB0 .......................................................................... 40
2.1. x72 DIMM, populated as two physical ranks of x8 DDR3 SDRAMs .............................................................. 40
3 256Mbx4 based 256Mx72 Module (1 Rank) - M392B5670GB0 ............................................................................ 41
3.1. x72 DIMM, populated as one physical rank of x4 DDR3 SDRAMs ................................................................ 41

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datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

1. DDR3 VLP Registered DIMM Ordering Information

NOTE :

1. "##" - F8/H9/K0/MA

2. F8 - 1066Mbps 7-7-7 / H9 - 1333Mbps 9-9-9 / K0 - 1600Mbps 11-11-11 / MA - 1866Mbps 13-13-13

- DDR3-1866(13-13-13) is backward compatible to DDR3-1600(11-11-11), DDR3-1333(9-9-9), DDR3-1066(7-7-7)

- DDR3-1600(11-11-11) is backward compatible to DDR3-1333(9-9-9), DDR3-1066(7-7-7)

- DDR3-1333(9-9-9) is backward compatible to DDR3-1066(7-7-7)

2. Key Features

• JEDEC standard 1.5V ± 0.075V Power Supply

•V

DDQ = 1.5V ± 0.075V

• 400MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,

900MHz fCK for 1866Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 6,7,8,9,10,11,13

• Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock

• Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9 (DDR3-1866)

• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or

write [either On the fly using A12 or MRS]

• Bi-directional Differential Data Strobe

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C

• Asynchronous Reset

3. Address Configuration

Part Number2Density Organization Component Composition Number of

Rank Height

M392B2873GB0-CF8/H9/K0/MA 1GB 128Mx72 128Mx8(K4B1G0846G-BC##1)*9 1 18.75mm

M392B5673GB0-CF8/H9/K0/MA 2GB 256Mx72 128Mx8(K4B1G0846G-BC##1)*18 2 18.75mm

M392B5670GB0-CF8/H9/K0/MA 2GB 256Mx72 256Mx4(K4B1G0446G-BC##1)*18 1 18.75mm

Speed DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Unit

6-6-6 7-7-7 9-9-9 11-11-11 13-13-13

tCK(min) 2.5 1.875 1.5 1.25 1.07 ns

CAS Latency 67911 13 nCK

tRCD(min) 15 13.125 13.5 13.75 13.91 ns

tRP(min) 15 13.125 13.5 13.75 13.91 ns

tRAS(min) 37.5 37.5 36 35 34 ns

tRC(min) 52.5 50.625 49.5 48.75 47.91 ns

Organization Row Address Column Address Bank Address Auto Precharge

256Mx4(1Gb) based Module A0-A13 A0-A9, A11 BA0-BA2 A10/AP

128Mx8(1Gb) based Module A0-A13 A0-A9 BA0-BA2 A10/AP

- 5 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

4. Registered DIMM Pin Configurations (Front side/Back side)

NOTE : NC = No internal Connection

SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.

Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back

1VREFDQ 121 VSS 42 DQS8162

NC,DQS17

,TDQS17 82 DQ33 202 VSS

2VSS 122 DQ4 43 DQS8 163 VSS 83 VSS 203 DM4,DQS13

,TDQS13

3DQ0123DQ544

VSS 164 CB6,NC 84 DQS4 204 NC,DQS13

,TDQS13

4DQ1124

VSS 45 CB2,NC 165 CB7,NC 85 DQS4 205 VSS

5VSS 125 DM0,DQS9

,TDQS9 46 CB3,NC 166 VSS 86 VSS 206 DQ38

6DQS

0126

NC,DQS9

,TDQS947 VSS 167 NC(TEST) 87 DQ34 207 DQ39

7DQS0127VSS 48 VTT

, NC 168 RESET 88 DQ35 208 VSS

8VSS 128 DQ6 KEY 89 VSS 209 DQ44

9DQ2129DQ749

VTT

, NC 169 CKE1, NC 90 DQ40 210 DQ45

10 DQ3 130 VSS 50 CKE0 170 VDD 91 DQ41 211 VSS

11 VSS 131 DQ12 51 VDD 171 NC 92 VSS 212 DM5,DQS14

,TDQS14

12 DQ8 132 DQ13 52 BA2 172 NC 93 DQS5 213 NC,DQS14

,TDQS14

13 DQ9 133 VSS 53 Err_Out/NC 173 VDD 94 DQS5 214 VSS

14 VSS 134 DM1,DQS10

,TDQS10 54 VDD 174 A12/BC 95 VSS 215 DQ46

15 DQS1135

NC,DQS10

,TDQS10 55 A11 175 A9 96 DQ42 216 DQ47

16 DQS1 136 VSS 56 A7 176 VDD 97 DQ43 217 VSS

17 VSS 137 DQ14 57 VDD 177 A8 98 VSS 218 DQ52

18 DQ10 138 DQ15 58 A5 178 A6 99 DQ48 219 DQ53

19 DQ11 139 VSS 59 A4 179 VDD 100 DQ49 220 VSS

20 VSS 140 DQ20 60 VDD 180 A3 101 VSS 221 DM6,DQS15

,TDQS15

21 DQ16 141 DQ21 61 A2 181 A1 102 DQS6 222 NC,DQS15

,TDQS15

22 DQ17 142 VSS 62 VDD 182 VDD 103 DQS6 223 VSS

23 VSS 143 DM2,DQS11

,TDQS11 63 NC, CK1 183 VDD 104 VSS 224 DQ54

24 DQS2144

NC,DQS11

,TDQS11 64 NC, CK1 184 CK0 105 DQ50 225 DQ55

25 DQS2 145 VSS 65 VDD 185 CK0 106 DQ51 226 VSS

26 VSS 146 DQ22 66 VDD 186 VDD 107 VSS 227 DQ60

27 DQ18 147 DQ23 67 VREFCA 187 EVENT,NC 108 DQ56 228 DQ61

28 DQ19 148 VSS 68 NC/Par_In 188 A0 109 DQ57 229 VSS

29 VSS 149 DQ28 69 VDD 189 VDD 110 VSS 230 DM7/DQS16

TDQS16

30 DQ24 150 DQ29 70 A10/AP 190 BA1 111 DQS7 231 DM7,DQS16

,TDQS16

31 DQ25 151 VSS 71 BA0 191 VDD 112 DQS7 232 VSS

32 VSS 152 DM3,DQS12

,TDQS12 72 VDD 192 RAS 113 VSS 233 DQ62

33 DQS3153

NC,DQS12

,TDQS12 73 WE 193 S0 114 DQ58 234 DQ63

34 DQS3 154 VSS 74 CAS 194 VDD 115 DQ59 235 VSS

35 VSS 155 DQ30 75 VDD 195 ODT0 116 VSS 236 VDDSPD

36 DQ26 156 DQ31 76 S1,NC 196 A13 117 SA0 237 SA1

37 DQ27 157 VSS 77 ODT1,NC 197 VDD 118 SCL 238 SDA

38 VSS 158 CB4,NC 78 VDD 198 S3,NC 119 SA2 239 VSS

39 CB0,NC 159 CB5,NC 79 S2,NC 199 VSS 120 VTT 240 VTT

40 CB1,NC 160 VSS 80 VSS 200 DQ36

41 VSS 161 DM8,DQS17

TDQS17,NC 81 DQ32 201 DQ37

- 6 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

5. Pin Description

NOTE :

*The VDD and VDDQ pins are tied common to a single power-plane on these designs.

6. ON DIMM Thermal Sensor

NOTE : 1. All Samsung RDIMM support Thermal sensor on DIMM

2. When the SPD and the thermal sensor are placed on the module, R1 is placed but R2 is not.

When only the SPD is placed on the module, R2 is placed but R1 is not.

[ Table 1 ] Temperature Sensor Characteristics

Pin Name Description Number Pin Name Description Number

CK0 Clock Input, positive line 1 ODT[1:0] On Die Termination Inputs 2

CK0 Clock Input, negative line 1 DQ[63:0] Data Input/Output 64

CKE[1:0] Clock Enables 2 CB[7:0] Data check bits Input/Output 8

RAS Row Address Strobe 1 DQS[8:0] Data strobes 9

CAS Column Address Strobe 1 DQS[8:0] Data strobes, negative line 9

WE Write Enable 1

DM[8:0]/

DQS[17:9]

TDQS[17:9]

Data Masks/ Data strobes,

Termination data strobes 9

S[3:0] Chip Selects 4 DQS[17:9]

TDQS[17:9]

Data strobes, negative line, Termination data

strobes 9

A[9:0],A11,

A[15:13] Address Inputs 2\14 RFU Reserved for Future Use 2

A10/AP Address Input/Autoprecharge 1 EVENT Reserved for optional hardware temperature

sensing 1

A12/BC Address Input/Burst chop 1 TEST Memory bus test toll (Not Connected and Not

Usable on DIMMs) 1

BA[2:0] SDRAM Bank Addresses 3 RESET Register and SDRAM control pin 1

SCL Serial Presence Detect (SPD) Clock Input 1 VDD Power Supply 22

SDA SPD Data Input/Output 1 VSS Ground 59

SA[2:0] SPD Address Inputs 3 VREFDQ Reference Voltage for DQ 1

Par_In Parity bit for the Address and Control bus 1 VREFCA Reference Voltage for CA 1

Err_Out Parity error found on the Address and Control

bus 1VTT Termination Voltage 4

VDDSPD SPD Power 1

Total 240

Grade Range Temperature Sensor Accuracy Units NOTE

Min. Typ. Max.

75 < Ta < 95 - +/- 0.5 +/- 1.0

°C

40 < Ta < 125 - +/- 1.0 +/- 2.0 -

-20 < Ta < 125 - +/- 2.0 +/- 3.0 -

Resolution 0.25 °C /LSB -

SCL SDA

WP/EVENT

SA0 SA1 SA2

EVENT

0 Ω

- 7 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

7. Input/Output Functional Description

Symbol Type Polarity Function

CK0 Input Positive

Edge Positive line of the differential pair of system clock inputs that drives input to the on-DIMM Clock Driver.

CK0 Input Negative

Edge Negative line of the differential pair of system clock inputs that drives the input to the on-DIMM Clock Driver.

CKE[1:0] Input Active High

CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers

and output drivers of the SDRAMs. Taking CKE LOW provides PRECHARGE POWER-DOWN

and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row ACTIVE in any bank)

S[3:0] Input Active Low

Enables the associated SDRAM command decoder when low and disables decoder when high.

When decoder is disabled, new commands are ignored and previous operations continue.

These input signals also disable all outputs (except CKE and ODT) of the register(s) on the DIMM when both

inputs are high. When both S[1:0] are high, all register outputs (except CKE, ODT and Chip select) remain in

the previous state. For modules supporting 4 ranks, S[3:2] operate similarly to S[1:0] for a second set of reg-

ister outputs.

ODT[1:0] Input Active High On-Die Termination control signals

RAS, CAS, WE Input Active Low When sampled at the positive rising edge of the clock, CAS, RAS, and WE define the operation to be exe-

cuted by the SDRAM.

VREFDQ Supply Reference voltage for DQ0-DQ63 and CB0-CB7

VREFCA Supply Reference voltage for A0-A15, BA0-BA2, RAS, CAS, WE, S0, S1, CKE0, CKE1, Par_In, ODT0 and ODT1.

BA[2:0] Input

Selects which SDRAM bank of eight is activated.

BA0 - BA2 define to which bank an Active, Read, Write or Precharge command is being applied. Bank

address also determines mode register is to be accessed during an MRS cycle.

A[15:13,

12/BC,11,

10/AP,9:0]

Input

Provided the row address for Active commands and the column address and Auto Precharge bit for Read/

Write commands to select one location out of the memory array in the respective bank. A10 is sampled dur-

ing a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks

(A10 HIGH). If only one bank is to be precharged, the bank is selected by BA. A12 is also utilized for BL 4/8

identification for "BL on the fly" during CAS command. The address inputs also provide the op-code during

Mode Register Set commands.

DQ[63:0],

CB[7:0] I/O Data and Check Bit Input/Output pins

DM[8:0]

Active High Masks write data when high, issued concurrently with input data.

VDD, VSS Supply Power and ground for the DDR SDRAM input buffers and core logic.

VTT Supply Termination Voltage for Address/Command/Control/Clock nets.

DQS[17:0] I/O Positive Edge Positive line of the differential data strobe for input and output data.

DQS[17:0] I/O Negative Edge Negative line of the differential data strobe for input and output data.

TDQS[17:9],

TDQS[17:9] OUT

TDQS/TDQS is applicable for X8 DRAMs only. When enabled via Mode Register A11=1 in MR1, DRAM will

enable the same termination resistance function on TDQS/TDQS that is applied to DQS/DQS. When dis-

abled via mode register A11=0 in MR1, DM/TDQS will provide the data mask function and TDQS is not used.

X4/X16 DRAMs must disable the TDQS function via mode register A11=0 in MR1

SA[2:0] IN These signals are tied at the system planar to either VSS or VDDSPD to configure the serial SPD EEPROM

address range.

SDA I/O This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor must be

connected from the SDA bus line to VDDSPD on the system planar to act as a pull-up.

SCL IN This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected

from the SCL bus time to VDDSPD on the system planar to act as a pull-up.

EVENT

OUT

(open

drain)

Active Low This signal indicates that a thermal event has been detected in the thermal sensing device.The system

should guarantee the electrical level requirement is met for the EVENT pin on TS/SPD part.

VDDSPD Supply Serial EEPROM positive power supply wired to a separate power pin at the connector which supports from

3.0 Volt to 3.6 Volt (nominal 3.3V) operation.

RESET IN

The RESET pin is connected to the RESET pin on the register and to the RESET pin on the DRAM. When

low, all register outputs will be driven low and the Clock Driver clocks to the DRAMs and register(s) will be set

to low level (the Clock Driver will remain synchronized with the input clock)

Par_In IN Parity bit for the Address and Control bus. ("1 " : Odd, "0 ": Even)

Err_Out

OUT

(open

drain)

Parity error detected on the Address and Control bus. A resistor may be connected from Err_Out

bus line to VDD on the system planar to act as a pull up.

TEST Used by memory bus analysis tools (unused (NC) on memory DIMMs)

- 8 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

8. Pinout Comparison Based On Module Type

NOTE : NC = No internal Connection

Pin RDIMM UDIMM

Signal NOTE Signal NOTE

48, 49 VTT Additional connection for Termination Voltage for

Address/Command/Control/Clock nets. NC Not used on UDIMMs

120, 240 VTT Termination Voltage for Address/Command/Con-

trol/Clock nets. VTT Termination Voltage for Address/Command/Con-

trol/Clock nets.

53 Err_Out Connected to the register on all RDIMMs NC Not

used on UDIMMs NC NC Not used on UDIMMs

63 NC Not used on RDIMMs CK1 Used for 2 rank UDIMMs, not used on single-rank

UDIMMs, but terminated

64 NC CK1

68 Par_In Connected to the register on all RDIMMs NC Not used on RDIMMs

76 S1 Connected to the register on all RDIMMs S1 Used for dual-rank UDIMMs, not connected

on single-rank UDIMMs

77 ODT1, NC Connected to the register on dual- and quadrank

RDIMMs; NC on single-rank RDIMMs ODT1,NC Used for dual-rank UDIMMs, not connected

on single-rank UDIMMs

79 S2, NC

Connected to the register on quad-rank

RDIMMs, not connected on single or dual rank

RDIMMs

NC Not used on UDIMMs

167 NC TEST input used only on bus analysis probes NC TEST input used only on bus analysis

probes

169 CKE1

Connected to the register on dual- and quadrank

RDIMMs; NC on single-rank RDIMMs

CKE1,

Used for dual-rank UDIMMs, not connected

on single-rank UDIMMs

171 A15

Connected to the register on all RDIMMs

A15, NC Depending on device density, may not be

connected to SDRAMs on UDIMMs. However,

these signals are terminated on

UDIMMs. A15 not routed on some RCs

172 A14 A14

196 A13 A13

198 S3, NC

Connected to the register on quad-rank

RDIMMs, not connected on single-or dual-rank

RDIMMs

NC Not used on UDIMMs

39, 40, 45, 46,

158, 159, 164,

165

CBn Used on all RDIMMs; (n = 0...7) NC, CBn Used on x72 UDIMMs, (n = 0...7); not

used on x64 UDIMMs

125, 134, 143,

152, 161, 203,

212, 221, 230

DQSn,

TDQSn

Connected to DQS on x4 SDRAMs,

TDQS on x8 SDRAMs on RDIMMs; (n = 9...17) DMn

Connected to DM on x8 DRAMs, UDM or

LDM on x16 DRAMs on UDIMMs;

(n = 0...8)

126, 135, 144,

153, 162, 204,

213, 222, 231

DQSn,

TDQSn

Connected to DQS on x4 DRAMs, TDQS on x8

SDRAMs on RDIMMs; (n=9...17) NC Not used on UDIMMs

187 EVENT

Connected to optional thermal sensing compo-

nent.

NC on Modules without a thermal sensing

component.

NC Not used on UDIMMs

- 9 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

9. Registering Clock Driver Specification

9.1 Timing & Capacitance values

9.2 Clock driver Characteristics

Symbol Parameter Conditions

TC = TBD

VDD = 1.5 ± 0.075V Units Notes

Min Max

fclock Input Clock Frequency application frequency 300 670 MHz

tCH/tCL Pulse duration, CK, CK HIGH or LOW 0.4 - tCK

tACT Inputs active time4 before RESET is taken HIGH DCKE0/1 = LOW and

DCS0/1 = HIGH 8-

tCK

tSU Setup time Input valid before CK/CK 100 - ps

tHHold time Input to remain Valid after CK/

CK 175 -

tPDM Propagation delay, single-bit switching CK/CK to output 0.65 1.0 ns

tDIS

output disable time(1/2-Clock pre-launch) CK/CK to output float 0.5 - tCK

output disable time(3/4-Clock pre-launch) 0.25 -

tEN

output enable time(1/2-Clock pre-launch) CK/CK to output driving -0.5

tCK

output enable time(3/4-Clock pre-launch) - 0.25

CIN(DATA) Data Input Capacitance 1.5 2.5

CIN(CLOCK) Data Input Capacitance 2 3

CIN(RST) Reset Input Capacitance - 3

Symbol Parameter Conditions

TC = TBD

VDD = 1.5 ± 0.075V Units Notes

Min Max

tjit (cc) Cycle-to-cycle period jitter 0 40 ps

tSTAB Stabilization time -6us

tfdyn Dynamic phase offset -50 50 ps

tCKsk Clock Output skew 50 ps

tjit(per) Yn Clock Period jitter -40 40 ps

tjit(hper) Half period jitter -50 50 ps

tQsk1 Qn Output to clock tolerance (Standard 1/2 -Clock

Pre-Launch)

Output Inversion enabled -100 200 ps

OUtput Inversion disabled -100 300

tQsk1 Output clock tolerance (3/4 Clock Pre-Launch) Output Inversion enabled -100 200 ps

OUtput Inversion disabled -100 300

tdynoff Maximum re-driven dynamic clock off-set -80 80 ps

- 10 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

10. Function Block Diagram:

10.1 1GB, 128Mx72 Module (Populated as 1 rank of x8 DDR3 SDRAMs)

Thermal sensor with SPD

A1 A2

SA0 SA1 SA2

SCL

SDA

DQS8

DM8/DQS17

DQS17

CB[7:0]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

RS0A

RRASA

RCASA

RWEA

PCK0A

RCLE0A

RODT0A

A[N:0]A

/BA[N:0]A

DQS3

DM3/DQS12

DQS12

DQ[31:24]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS2

DM2/DQS11

DQS11

DQ[23:16]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS1

DM1/DQS10

DQS10

DQ[15:8]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS0

DM0/DQS9

DQS9

DQ[7:0]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

Vtt

DQS4

DM4/DQS13

DQS13

DQ[39:32]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

RS0B

RRASB

RCASB

RWEB

PCK0B

RCLE0B

RODT0B

A[N:0]B

/BA[N:0]B

DQS5

DM5/DQS14

DQS14

DQ[47:40]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS6

DM6/DQS15

DQS15

DQ[55:48]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS7

DM7/DQS16

DQS16

DQ[63:56]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

Vtt

VSS

VDD D0 - D8

VREFCA

VDDSPD Serial PD

1:2

S1*

BA[N:0]

A[N:0]

RAS

CAS

CKE0

CK0

RESET**

RST** : SDRAMs D[8:0]

RS0B-> CS0 : SDRAMs D[7:4]

RBA[N:0]A -> BA[N:0] : SDRAMs D[3:0], D8

RA[N:0]A -> A[N:0] : SDRAMs D[3:0], D8

RRASA -> RAS : SDRAMs D[3:0], D8

RCASA -> CAS : SDRAMs D[3:0], D8

RCKE0A -> CKE0 : SDRAMs D[3:0], D8

ODT0

PAR_IN

RODT0A -> ODT0 : SDRAMs D[3:0], D8

S0*RS0A-> CS0 : SDRAMs D[3:0], D8

EVENT EVENT

VTT

VREFDQ

D0 - D8

NOTE :

1. ZQ resistors are 240Ω ± 1% For all other resistor values refer to the appropriate

wiring diagram.

RBA[N:0]B -> BA[N:0] : SDRAMs D[7:4]

RA[N:0]B -> A[N:0] : SDRAMs D[7:4]

RRASB -> RAS : SDRAMs D[7:4]

RCASB -> CAS : SDRAMs D[7:4]

RWEA -> WE : SDRAMs D[3:0], D8

RWEB -> WE : SDRAMs D[7:4]

RCKE0B -> CKE0 : SDRAMs D[7:4]

RODT0B -> ODT0 : SDRAMs D[7:4]

PCK0A -> CK : SDRAMs D[3:0], D8

PCK0A -> CK : SDRAMs D[7:4]

PCK0A -> CK : SDRAMs D[3:0], D8

PCK0A -> CK : SDRAMs D[7:4]

Err_out

QERR

RST

CK0

*S[3:2], CKE1, ODT1, CK1 and CK1 are NC

(Unused register inputs ODT1 and CKE1 have a 330 ohm resistor to ground)

- 11 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

10.2 2GB, 256Mx72 Module (Populated as 2 ranks of x8 DDR3 SDRAMs)

Thermal sensor with SPD

A1 A2

SA0 SA1 SA2

SCL

SDA

DQS8

DM8/DQS17

DQS17

CB[7:0]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

RS0A

RRASA

RCASA

RWEA

PCK0A

RCKE0A

RODT0A

A[N:0]A

/BA[N:0]A

Vtt

VSS

VDD D0 - D17

VREFCA

VDDSPD Serial PD

EVENT EVENT

VTT

VREFDQ

D0 - D17

NOTE :

1. Unless otherwise noted, resistor values are 15Ω ± 5%.

2. RS0 and RS1 alternate between the back and front sides of the DIMM.

3. ZQ resistors are 240Ω ± 1% . For all other resistor values refer to the appropriate

wiring diagram.

4. See the wiring diagrams for all resistors associated with the command, address

and control bus.

DQS

TDQS

DQ[7:0]

D17

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

RS1A

PCK1A

RCKE1A

RODT1A

DQS3

DM3/DQS12

DQS12

DQ[31:24]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS

TDQS

DQ[7:0]

D12

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS2

DM2/DQS11

DQS11

DQ[23:16]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS

TDQS

DQ[7:0]

D11

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS1

DM1/DQS10

DQS10

DQ[15:8]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS

TDQS

DQ[7:0]

D10

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS0

DM0/DQS9

DQS9

DQ[7:0]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS4

DM4/DQS13

DQS13

DQ[39:32]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

RS0B

RRASB

RCASB

RWEB

PCK0B

RCKE0B

RODT0B

A[N:0]B

/BA[N:0]B

Vtt

DQS

TDQS

DQ[7:0]

D13

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

RS1B

PCK1B

RCKE1B

RODT1B

DQS5

DM5/DQS14

DQS14

DQ[47:40]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS

TDQS

DQ[7:0]

D14

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS6

DM6/DQS15

DQS15

DQ[55:48]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS

TDQS

DQ[7:0]

D15

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS7

DM7/DQS16

DQS16

DQ[63:56]

DQS

TDQS

DQ[7:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

DQS

TDQS

DQ[7:0]

D16

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

1:2

S1*

BA[N:0]

A[N:0]

RAS

CAS

CKE0

RESET**

RST** : SDRAMs D[8:0]

RS1B-> CS1 : SDRAMs D[16:13]

RBA[N:0]A -> BA[N:0] : SDRAMs D[3:0], D[12:8], D17

RA[N:0]A -> A[N:0] : SDRAMs D[3:0], D[12:8], D17

RRASA -> RAS : SDRAMs D[3:0], D[12:8], D17

RCASA -> CAS : SDRAMs D[3:0], D[12:8], D17

RCKE0A -> CKE0 : SDRAMs D[3:0], D8

PAR_IN

S0*RS0A-> CS0 : SDRAMs D[3:0], D8

RBA[N:0]B -> BA[N:0] : SDRAMs D[7:4], D[16:13]

RA[N:0]B -> A[N:0] : SDRAMs D[7:4, D[16:13]]

RRASB -> RAS : SDRAMs D[7:4], D[16:13]

RCASB -> CAS : SDRAMs D[7:4], D[16:13]

RWEA -> WE : SDRAMs D[3:0], D[12:8], D17

RWEB -> WE : SDRAMs D[7:4], D[16:13]

RCKE0B -> CKE0 : SDRAMs D[7:4]

PCK1A -> CK : SDRAMs D[12:9], D17

PCK1B -> CK : SDRAMs D[16:13]

PCK0A -> CK : SDRAMs D[3:0], D8

PCK0B -> CK : SDRAMs D[7:4]

Err_out

QERR

RST

CK0

*S[3:2], CKE1, ODT1, CK1 and CK1 are NC

CKE1 RCKE1A -> CKE1 : SDRAMs D[12:9], D17

RCKE1B -> CKE1 : SDRAMs D[16:13]

ODT0 RODT0A -> ODT0 : SDRAMs D[3:0], D8

RODT0B -> ODT0 : SDRAMs D[7:4]

ODT1 RODT1A -> ODT1 : SDRAMs D[12:9], D17

RODT1A -> ODT1 : SDRAMs D[16:13]

CK0 PCK0A -> CK : SDRAMs D[3:0], D8

PCK0B -> CK : SDRAMs D[7:4]

PCK1A -> CK : SDRAMs D[12:9], D17

PCK1B -> CK : SDRAMs D[16:13]

RS0B-> CS0 : SDRAMs D[7:4]

RS1A-> CS1 : SDRAMs D[12:9], D17

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

- 12 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

10.3 2GB, 256Mx72 Module (Populated as 1 rank of x4 DDR3 SDRAMs)

DQ[27:24]

DQ[19:16]

DQS8

CB[3:0]

DQS

DQ[3:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

RS0A

RRASA

RCASA

RWEA

PCK0A

RCKE0A

RODT0A

A[N:0]A

/BA[N:0]A

VSS

DQS17

CB[7:4]

DQS

D17

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQ[3:0]

DQS3

DQ[27:24]

DQS

DQ[3:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQS17

DQ[31:28]

DQS

D12

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQ[3:0]

DQS8

DQ[19:16]

DQS

DQ[3:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQS17

DQ[23:20]

DQS

D11

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQ[3:0]

DQS8

DQ[11:8]

DQS

DQ[3:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQS17

DQ[15:12]

DQS

D10

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQ[3:0]

DQS8

DQ[3:0]

DQS

DQ[3:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQS17

DQ[7:4]

DQS

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQ[3:0]

DQS8

DQ[35:32]

DQS

DQ[3:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

RS0B

RRASB

RCASB

RWEB

PCK0B

RCKE0B

RODT0B

A[N:0]B

/BA[N:0]B

VSS

DQS17

DQ[39:36]

DQS

D13

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQ[3:0]

DQS8

DQ[43:40]

DQS

DQ[3:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQS17

DQ[47:44]

DQS

D14

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQ[3:0]

DQS8

DQ[51:48]

DQS

DQ[3:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQS17

DQ[55:52]

DQS

D15

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQ[3:0]

DQS8

DQ[59:56]

DQS

DQ[3:0]

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQS17

DQ[63:60]

DQS

D16

RAS

CAS

CKE

ODT

A[N:0]/BA[N:0]

VSS

DQ[3:0]

Vtt

D0 - D17

REFCA

DDSPD

Serial PD

REFDQ

D0 - D17

NOTE :

1. Unless otherwise noted, resistor values are 15Ω ± 5%.

2. See the wiring diagrams for all resistors associated with the command, address

and control bus.

3. ZQ resistors are 240Ω ± 1% . For all other resistor values refer to the appropriate

wiring diagram.

1:2

S1*

BA[N:0]

A[N:0]

RAS

CAS

CKE0

RESET**

RST** : SDRAMs D[17:0]

RBA[N:0]A -> BA[N:0] : SDRAMs D[3:0], D[12:8], D17

RA[N:0]A -> A[N:0] : SDRAMs D[3:0], D[12:8], D17

RRASA -> RAS : SDRAMs D[3:0], D[12:8], D17

RCASA -> CAS : SDRAMs D[3:0], D[12:8], D17

RCKE0A -> CKE0 : SDRAMs D[3:0], D[12:8], D17

PAR_IN

S0*RS0A-> CS0 : SDRAMs D[3:0], D[12:8], D17

RBA[N:0]B -> BA[N:0] : SDRAMs D[7:4], D[16:13]

RA[N:0]B -> A[N:0] : SDRAMs D[7:4], D[16:13]

RRASB -> RAS : SDRAMs D[7:4], D[16:13]

RCASB -> CAS : SDRAMs D[7:4], D[16:13]

RWEA -> WE : SDRAMs D[3:0], D[12:8], D17

RWEB -> WE : SDRAMs D[7:4], D[16:13]

RCKE0B -> CKE0 : SDRAMs D[7:4], D[16:13]

PCK0A -> CK : SDRAMs D[3:0], D[12:8], D17

PCK0B -> CK : SDRAMs D[7:4], D[16:13]

Err_out

QERR

RST

CK0

*S[3:2], CKE1, ODT1, CK1 and CK1 are NC

ODT0 RODT0A -> ODT0 : SDRAMs D[3:0], D[12:8], D17

RODT0B -> ODT0 : SDRAMs D[7:4], D[16:13]

CK0 PCK0A -> CK : SDRAMs D[3:0], D[12:8], D17

PCK0B -> CK : SDRAMs D[7:4], D[16:13]

RS0B-> CS0 : SDRAMs D[7:4], D[16:13]]

(Unused register inputs ODT1 and CKE1 have a 330

Ω

resistor to ground)

Thermal sensor with SPD

A1 A2

SA0 SA1 SA2

SCL

SDA

EVENT EVENT

- 17 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

11. Absolute Maximum Ratings

11.1 Absolute Maximum DC Ratings

NOTE :

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions

for extended periods may affect reliability.

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.

3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ, When VDD and VDDQ are less than 500mV; VREF may be

equal to or less than 300mV.

11.2 DRAM Component Operating Temperature Range

NOTE :

1. Operating Temperature TOPER is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the JEDEC document

JESD51-2.

2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be main-

tained between 0-85°C under all operating conditions

3. Some applications require operation of the Extended Temperature Range between 85°C and 95°C case temperature. Full specifications are guaranteed in this range, but the

following additional conditions apply:

a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us.

b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature

Range capability (MR2 A6 = 0b and MR2 A7 = 1b), in this case IDD6 current can be increased around 10~20% than normal Temperature range.

12. AC & DC Operating Conditions

12.1 Recommended DC Operating Conditions (SSTL-15)

NOTE:

1. Under all conditions VDDQ must be less than or equal to VDD.

2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

Symbol Parameter Rating Units NOTE

VDD Voltage on VDD pin relative to VSS -0.4 V ~ 1.975 V V 1,3

VDDQ Voltage on VDDQ pin relative to VSS -0.4 V ~ 1.975 V V 1,3

VIN, VOUT Voltage on any pin relative to VSS -0.4 V ~ 1.975 V V 1

TSTG Storage Temperature -55 to +100 °C 1, 2

Symbol Parameter rating Unit NOTE

TOPER Operating Temperature Range 0 to 95 °C 1, 2, 3

Symbol Parameter Rating Units NOTE

Min. Typ. Max.

VDD Supply Voltage 1.425 1.5 1.575 V 1,2

VDDQ Supply Voltage for Output 1.425 1.5 1.575 V 1,2

- 18 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

13. AC & DC Input Measurement Levels

13.1 AC & DC Logic Input Levels for Single-ended Signals

[ Table 2 ] Single-ended AC & DC input levels for Command and Address

NOTE :

1. For input only pins except RESET

, VREF = VREFCA(DC)

2. See ’Overshoot/Undershoot Specification’ on page 18.

3. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)

4. For reference : approx. VDD/2 ± 15mV

5. VIH(dc) is used as a simplified symbol for VIH.CA(DC100)

6. VIL(dc) is used as a simplified symbol for VIL.CA(DC100)

7. VIH(ac) is used as a simplified symbol for VIH.CA(AC175), VIH.CA(AC150), VIH.CA(AC135) and VIH.CA(AC125); VIH.CA(AC175) value is used when VREF + 175mV is referenced

, VIH.CA(AC150) value is used when VREF + 150mV is referenced, VIH.CA(AC135) value is used when VREF + 135mV is referenced and VIH.CA(AC125) value is used when

VREF + 125mV is referenced.

8. VIL(ac) is used as a simplified symbol for VIL.CA(AC175) and VIL.CA(AC150), VIL.CA(AC135) and VIL.CA(AC125); VIL.CA(AC175) value is used when VREF - 175mV is refer-

enced, VIL.CA(AC150) value is used when VREF - 150mV is referenced, VIL.CA(AC135) value is used when VREF - 135mV is referenced and VIL.CA(AC125) value is used

when VREF - 125mV is referenced.

[ Table 3 ] Single-ended AC & DC input levels for DQ and DM

NOTE :

1. For input only pins except RESET

, VREF = VREFDQ(DC)

2. See ’Overshoot/Undershoot Specification’ on page 18.

3. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)

4. For reference : approx. VDD/2 ± 15mV

5. VIH(dc) is used as a simplified symbol for VIH.DQ(DC100)

6. VIL(dc) is used as a simplified symbol for VIL.DQ(DC100)

7. VIH(ac) is used as a simplified symbol for VIH.DQ(AC175), VIH.DQ(AC150) and VIH.DQ(AC135) ; VIH.DQ(AC175) value is used when VREF + 175mV is referenced,

VIH.DQ(AC150) value is used when VREF + 150mV is referenced.

8. VIL(ac) is used as a simplified symbol for VIL.DQ(AC175), VIL.DQ(AC150) ; VIL.DQ(AC175) value is used when VREF - 175mV is referenced, VIL.DQ(AC150) value is used when

VREF - 150mV is referenced.

Symbol Parameter DDR3-800/1066/1333/1600 DDR3-1866 Unit NOTE

Min. Max. Min. Max.

VIH.CA(DC100) DC input logic high VREF + 100 VDD VREF + 100 VDD mV 1,5

VIL.CA(DC100) DC input logic low VSS VREF - 100 VSS VREF - 100 mV 1,6

VIH.CA(AC175) AC input logic high VREF + 175 Note 2 - - mV 1,2,7

VIL.CA(AC175) AC input logic low Note 2 VREF - 175 --mV1,2,8

VIH.CA(AC150) AC input logic high VREF+150 Note 2 - - mV 1,2,7

VIL.CA(AC150) AC input logic low Note 2 VREF-150 --mV1,2,8

VIH.CA(AC135) AC input logic high - - VREF + 135 Note 2 mV 1,2,7

VIL.CA(AC135) AC input logic low - - Note 2 VREF - 135 mV 1,2,8

VIH.CA(AC125) AC input logic high - - VREF+125 Note 2 mV 1,2,7

VIL.CA(AC125) AC input logic low - - Note 2 VREF-125 mV 1,2,8

VREFCA(DC) Reference Voltage for ADD,

CMD inputs 0.49*VDD 0.51*VDD 0.49*VDD 0.51*VDD V3,4

Symbol Parameter DDR3-800/1066 DDR3-1333/1600 DDR3-1866 Unit NOTE

Min. Max. Min. Max. Min. Max.

VIH.DQ(DC100) DC input logic high VREF + 100 VDD VREF + 100 VDD VREF + 100 VDD mV 1,5

VIL.DQ(DC100) DC input logic low VSS VREF - 100 VSS VREF - 100 VSS VREF - 100 mV 1,6

VIH.DQ(AC175) AC input logic high VREF + 175 NOTE 2 - - - - mV 1,2,7

VIL.DQ(AC175) AC input logic low NOTE 2 VREF - 175 - - - - mV 1,2,8

VIH.DQ(AC150) AC input logic high VREF + 150 NOTE 2 VREF + 150 NOTE 2 - - mV 1,2,7

VIL.DQ(AC150) AC input logic low NOTE 2 VREF - 150 NOTE 2 VREF - 150 - - mV 1,2,8

VIH.DQ(AC135) AC input logic high ----

VREF + 135 NOTE 2 mV 1,2,7

VIL.DQ(AC135) AC input logic low ----NOTE 2

VREF - 135 mV 1,2,8

VREFDQ(DC) Reference Voltage for DQ,

DM inputs 0.49*VDD 0.51*VDD 0.49*VDD 0.51*VDD 0.49*VDD 0.51*VDD V3,4

- 19 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

13.2 VREF Tolerances.

The dc-tolerance limits and ac-noise limits for the reference voltages VREFCA and VREFDQ are illustrate in Figure 1. It shows a valid reference voltage

VREF(t) as a function of time. (VREF stands for VREFCA and VREFDQ likewise).

VREF(DC) is the linear average of VREF(t) over a very long period of time (e.g. 1 sec). This average has to meet the min/max requirements of VREF

. Fur-

thermore VREF(t) may temporarily deviate from VREF(DC) by no more than ± 1% VDD.

Figure 1. Illustration of VREF(DC) tolerance and VREF ac-noise limits

The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC) and VIL(DC) are dependent on VREF

"VREF" shall be understood as VREF(DC), as defined in Figure 1.

This clarifies, that dc-variations of VREF affect the absolute voltage a signal has to reach to achieve a valid high or low level and therefore the time to

which setup and hold is measured. System timing and voltage budgets need to account for VREF(DC) deviations from the optimum position within the

data-eye of the input signals.

This also clarifies that the DRAM setup/hold specification and derating values need to include time and voltage associated with VREF ac-noise.

Timing and voltage effects due to ac-noise on VREF up to the specified limit (+/-1% of VDD) are included in DRAM timings and their associated deratings.

voltage

VDD

VSS

time

- 20 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

13.3 AC and DC Logic Input Levels for Differential Signals

13.3.1 Differential Signals Definition

Figure 2. Definition of differential ac-swing and "time above ac level" tDVAC

13.3.2 Differential Swing Requirement for Clock (CK - CK) and Strobe (DQS - DQS)

NOTE :

1. Used to define a differential signal slew-rate.

2. for CK - CK use VIH/VIL(AC) of ADD/CMD and VREFCA; for DQS - DQS use VIH/VIL(AC) of DQs and VREFDQ; if a reduced ac-high or ac-low level is used for a signal group,

then the reduced level applies also here.

3. These values are not defined, however they single-ended signals CK, CK, DQS, DQS, DQSL need to be within the respective limits (VIH(DC) max, VIL(DC)min) for single-

ended signals as well as the limitations for overshoot and undershoot. Refer to "overshoot and Undersheet Specification"

[ Table 4 ] Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS.

Symbol Parameter DDR3-800/1066/1333/1600/1866 unit NOTE

min max

VIHdiff differential input high +0.2 NOTE 3 V 1

VILdiff differential input low NOTE 3 -0.2 V 1

VIHdiff(AC) differential input high ac 2 x (VIH(AC) - VREF)NOTE 3 V 2

VILdiff(AC) differential input low ac NOTE 3 2 x (VIL(AC) - VREF)V2

Slew Rate [V/ns]

tDVAC [ps] @ |VIH/Ldiff(AC)|

= 350mV

tDVAC [ps] @ |VIH/Ldiff(AC)|

= 300mV

tDVAC [ps] @ |VIH/Ldiff(AC)|

= 270mV

tDVAC [ps] @ |VIH/Ldiff(AC)|

= 250mV

min max min max min max min max

> 4.0 75 - 175 -TBD-TBD-

4.0 57 - 170 - TBD - TBD -

3.0 50 - 167 - TBD - TBD -

2.0 38 - 163 - TBD - TBD -

1.8 34 - 162 - TBD - TBD -

1.6 29 - 161 - TBD - TBD -

1.4 22 - 159 - TBD - TBD -

1.2 13 - 155 - TBD - TBD -

1.0 0 - 150 - TBD - TBD -

< 1.0 0 - 150 -TBD-TBD-

0.0

tDVAC

VIH.DIFF.MIN

half cycle

Differential Input Voltage (i.e. DQS-DQS, CK-CK)

time

tDVAC

VIH.DIFF.AC.MIN

VIL.DIFF.MAX

VIL.DIFF.AC.MAX

- 21 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

13.3.3 Single-ended Requirements for Differential Signals

Each individual component of a differential signal (CK, DQS, CK, DQS) has also to comply with certain requirements for single-ended signals.

CK and CK have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels ( VIH(AC) / VIL(AC) ) for ADD/CMD signals) in every

half-cycle.

DQS, DQS have to reach VSEHmin / VSELmax (approximately the ac-levels ( VIH(AC) / VIL(AC) ) for DQ signals) in every half-cycle proceeding and follow-

ing a valid transition.

Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g. if VIH150(AC)/VIL150(AC) is used for ADD/CMD

signals, then these ac-levels apply also for the single-ended signals CK and CK .

Figure 3. Single-ended requirement for differential signals

Note that while ADD/CMD and DQ signal requirements are with respect to VREF

, the single-ended components of differential signals have a requirement

with respect to VDD/2; this is nominally the same. The transition of single-ended signals through the ac-levels is used to measure setup time. For single-

ended components of differential signals the requirement to reach VSELmax, VSEHmin has no bearing on timing, but adds a restriction on the common

mode characteristics of these signals.

[ Table 5 ] Single ended levels for CK, DQS, CK, DQS

NOTE :

1. For CK, CK use VIH/VIL(AC) of ADD/CMD; for strobes (DQS, DQS) use VIH/VIL(AC) of DQs.

2. VIH(AC)/VIL(AC) for DQs is based on VREFDQ; VIH(AC)/VIL(AC) for ADD/CMD is based on VREFCA; if a reduced ac-high or ac-low level is used for a signal group, then the

reduced level applies also here

3. These values are not defined, however the single-ended signals CK, CK, DQS, DQS need to be within the respective limits (VIH(DC) max, VIL(DC)min) for single-ended sig-

nals as well as the limitations for overshoot and undershoot. Refer to "Overshoot and Undershoot Specification"

Symbol Parameter DDR3-800/1066/1333/1600/1866 Unit NOTE

Min Max

VSEH

Single-ended high-level for strobes (VDD/2)+0.175 NOTE 3 V 1, 2

Single-ended high-level for CK, CK (VDD/2)+0.175 NOTE 3 V 1, 2

VSEL

Single-ended low-level for strobes NOTE 3 (VDD/2)-0.175 V1, 2

Single-ended low-level for CK, CK NOTE 3 (VDD/2)-0.175 V1, 2

VDD or VDDQ

VSEH min

VDD/2 or VDDQ/2

VSEL max

VSEH

VSS or VSSQ

VSEL

CK or DQS

time

- 22 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

13.3.4 Differential Input Cross Point Voltage

To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each cross point voltage of differential input

signals (CK, CK and DQS, DQS) must meet the requirements in below table. The differential input cross point voltage VIX is measured from the actual

cross point of true and complement signal to the mid level between of VDD and VSS.

Figure 4. VIX Definition

[ Table 6 ] Cross point voltage for differential input signals (CK, DQS)

NOTE :

1. Extended range for VIX is only allowed for clock and if single-ended clock input signals CK and CK are monotonic, have a single-ended swing VSEL / VSEH of at least VDD/2

±250 mV, and the differential slew rate of CK-CK is larger than 3 V/ ns.

2. The relation between VIX Min/Max and VSEL/VSEH should satisfy following.

(VDD/2) + VIX(Min) - VSEL ≥ 25mV

VSEH - ((VDD/2) + VIX(Max)) ≥ 25mV

13.4 Slew Rate Definition for Single Ended Input Signals

See "Address / Command Setup, Hold and Derating" for single-ended slew rate definitions for address and command signals.

See "Data Setup, Hold and Slew Rate Derating" for single-ended slew rate definitions for data signals.

13.5 Slew rate definition for Differential Input Signals

Input slew rate for differential signals (CK, CK and DQS, DQS) are defined and measured as shown in below.

[ Table 7 ] Differential input slew rate definition

NOTE : The differential signal (i.e. CK - CK and DQS - DQS) must be linear between these thresholds

Figure 5. Differential input slew rate definition for DQS, DQS and CK, CK

Symbol Parameter DDR3-800/1066/1333/1600/1866 Unit NOTE

Min Max

VIX Differential Input Cross Point Voltage relative to VDD/2 for CK,CK -150 150 mV 2

-175 175 mV 1

VIX Differential Input Cross Point Voltage relative to VDD/2 for DQS,DQS -150 150 mV 2

Description Measured Defined by

From To

Differential input slew rate for rising edge (CK-CK and DQS-DQS)VILdiffmax VIHdiffmin

VIHdiffmin - VILdiffmax

Delta TRdiff

Differential input slew rate for falling edge (CK-CK and DQS-DQS)VIHdiffmin VILdiffmax

VIHdiffmin - VILdiffmax

Delta TFdiff

VDD

CK, DQS

VDD/2

CK, DQS

VSS

VIX

VIHdiffmin

VILdiffmax

delta TRdiff

delta TFdiff

- 23 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

14. AC & DC Output Measurement Levels

14.1 Single Ended AC and DC Output Levels

[ Table 8 ] Single Ended AC and DC output levels

NOTE : 1. The swing of +/-0.1 x VDDQ is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40Ω and an effective test

load of 25Ω to VTT=VDDQ/2.

14.2 Differential AC and DC Output Levels

[ Table 9 ] Differential AC and DC output levels

NOTE : 1. The swing of +/-0.2xVDDQ is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40Ω and an effective test

load of 25Ω to VTT=VDDQ/2 at each of the differential outputs.

14.3 Single-ended Output Slew Rate

With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC)

for single ended signals as shown in below.

[ Table 10 ] Single ended Output slew rate definition

NOTE : Output slew rate is verified by design and characterization, and may not be subject to production test.

[ Table 11 ] Single ended output slew rate

Description : SR : Slew Rate

Q : Query Output (like in DQ, which stands for Data-in, Query-Output)

se : Single-ended Signals

For Ron = RZQ/7 setting

NOTE : 1) In two cased, a maximum slew rate of 6V/ns applies for a single DQ signal within a byte lane.

- Case_1 is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high to low of low to high) while all remaining DQ

signals in the same byte lane are static (i.e they stay at either high or low).

- Case_2 is defined for a single DQ signals in the same byte lane are switching into the opposite direction (i.e. from low to high or high to low respectively). For the

remaining DQ signal switching into the opposite direction, the regular maximum limit of 5 V/ns applies.

Figure 6. Single-ended Output Slew Rate Definition

Symbol Parameter DDR3-800/1066/1333/1600/1866 Units NOTE

VOH(DC) DC output high measurement level (for IV curve linearity) 0.8 x VDDQ V

VOM(DC) DC output mid measurement level (for IV curve linearity) 0.5 x VDDQ V

VOL(DC) DC output low measurement level (for IV curve linearity) 0.2 x VDDQ V

VOH(AC) AC output high measurement level (for output SR) VTT + 0.1 x VDDQ V1

VOL(AC) AC output low measurement level (for output SR) VTT - 0.1 x VDDQ V1

Symbol Parameter DDR3-800/1066/1333/1600/1866 Units NOTE

VOHdiff(AC) AC differential output high measurement level (for output SR) +0.2 x VDDQ V1

VOLdiff(AC) AC differential output low measurement level (for output SR) -0.2 x VDDQ V1

Description Measured Defined by

From To

Single ended output slew rate for rising edge VOL(AC) VOH(AC) VOH(AC)-VOL(AC)

Delta TRse

Single ended output slew rate for falling edge VOH(AC) VOL(AC) VOH(AC)-VOL(AC)

Delta TFse

Parameter Symbol DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Units

Min Max Min Max Min Max Min Max Min Max

Single ended output slew rate SRQse 2.5 5 2.5 5 2.5 5 2.5 5 2.5 51) V/ns

VOH(AC)

VOL(AC)

delta TRsedelta TFse

VTT

- 24 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

14.4 Differential Output Slew Rate

With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOLdiff(AC) and VOH-

diff(AC) for differential signals as shown in below.

[ Table 12 ] Differential Output slew rate definition

NOTE : Output slew rate is verified by design and characterization, and may not be subject to production test.

[ Table 13 ] Differential Output slew rate

Description : SR : Slew Rate

Q : Query Output (like in DQ, which stands for Data-in, Query-Output)

diff : Differential Signals

For Ron = RZQ/7 setting

Figure 7. Differential output slew rate definition

Description Measured Defined by

From To

Differential output slew rate for rising edge VOLdiff(AC) VOHdiff(AC) VOHdiff(AC)-VOLdiff(AC)

Delta TRdiff

Differential output slew rate for falling edge VOHdiff(AC) VOLdiff(AC) VOHdiff(AC)-VOLdiff(AC)

Delta TFdiff

Parameter Symbol DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Units

Min Max Min Max Min Max Min Max Min Max

Differential output slew rate SRQdiff 5 10 5 10 5 10 5 10 5 12 V/ns

VOHdiff(AC)

VOLdiff(AC)

delta TRdiffdelta TFdiff

VTT

- 25 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

15. DIMM IDD specification definition

Symbol Description

IDD0

Operating One Bank Active-Precharge Current

CKE: High; External clock: On; tCK, nRC, nRAS, CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS: High between ACT and PRE;

Command, Address, Bank Address Inputs: partially toggling ; Data IO: FLOATING; DM:stable at 0; Bank Activity: Cycling with one bank active at a time:

0,0,1,1,2,2,... ; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pat-

tern

IDD1

Operating One Bank Active-Read-Precharge Current

CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS: High between ACT, RD

and PRE; Command, Address, Bank Address Inputs, Data IO: partially toggling ; DM:stable at 0; Bank Activity: Cycling with one bank active at a time:

0,0,1,1,2,2,... ; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pat-

tern

IDD2N

Precharge Standby Current

CKE: High; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank

Address Inputs: partially toggling ; Data IO: FLOATING; DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode

Registers2); ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pattern

IDD2P0

Precharge Power-Down Current Slow Exit

CKE: Low; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank

Address Inputs: stable at 0; Data IO: FLOATING; DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2);

ODT Signal: stable at 0; Precharge Power Down Mode: Slow Exit3)

IDD2P1

Precharge Power-Down Current Fast Exit

CKE: Low; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank

Address Inputs: stable at 0; Data IO: FLOATING; DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2);

ODT Signal: stable at 0; Precharge Power Down Mode: Fast Exit3)

IDD2Q

Precharge Quiet Standby Current

CKE: High; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank

Address Inputs: stable at 0; Data IO: FLOATING; DM:stable at 0;Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2);

ODT Signal: stable at 0

IDD3N

Active Standby Current

CKE: High; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank

Address Inputs: partially toggling ; Data IO: FLOATING; DM:stable at 0;Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode

Registers2); ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pattern

IDD3P

Active Power-Down Current

CKE: Low; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank

Address Inputs: stable at 0; Data IO: FLOATING;DM:stable at 0; Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers2); ODT

Signal: stable at 0

IDD4R

Operating Burst Read Current

CKE: High; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS: High between RD; Command, Address,

Bank Address Inputs: partially toggling ; Data IO: seamless read data burst with different data between one burst and the next one ; DM:stable at 0; Bank

Activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,... ; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable

at 0; Pattern Details: Refer to Component Datasheet for detail pattern

IDD4W

Operating Burst Write Current

CKE: High; External clock: On; tCK, CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS: High between WR; Command, Address,

Bank Address Inputs: partially toggling ; Data IO: seamless write data burst with different data between one burst and the next one ; DM: stable at 0; Bank

Activity: all banks open, WR commands cycling through banks: 0,0,1,1,2,2,... ; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable

at HIGH; Pattern Details: Refer to Component Datasheet for detail pattern

IDD5B

Burst Refresh Current

CKE: High; External clock: On; tCK, CL, nRFC: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS: High between REF; Command,

Address, Bank Address Inputs: partially toggling ; Data IO: FLOATING;DM:stable at 0; Bank Activity: REF command every nRFC ; Output Buffer and

RTT: Enabled in Mode Registers2); ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pattern

IDD6

Self Refresh Current: Normal Temperature Range

TCASE: 0 - 85°C; Auto Self-Refresh (ASR): Disabled4); Self-Refresh Temperature Range (SRT): Normal5); CKE: Low; External clock: Off; CK and CK:

LOW; CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS, Command, Address, Bank Address, Data IO: FLOATING;DM:stable at 0;

Bank Activity: Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: FLOATING

IDD6ET

Self-Refresh Current: Extended Temperature Range (optional)6)

TCASE: 0 - 95°C; Auto Self-Refresh (ASR): Disabled4); Self-Refresh Temperature Range (SRT): Extended5); CKE: Low; External clock: Off; CK and CK:

LOW; CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: 0; CS, Command, Address, Bank Address, Data IO: FLOATING;DM:stable at 0;

Bank Activity: Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: FLOATING

IDD7

Operating Bank Interleave Read Current

CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: Refer to Component Datasheet for detail pattern ; BL: 81); AL: CL-1; CS: High

between ACT and RDA; Command, Address, Bank Address Inputs: partially toggling ; Data IO: read data bursts with different data between one burst and

the next one ; DM:stable at 0; Bank Activity: two times interleaved cycling through banks (0, 1, ...7) with different addressing ; Output Buffer and RTT:

Enabled in Mode Registers2); ODT Signal: stable at 0; Pattern Details: Refer to Component Datasheet for detail pattern

IDD8

RESET Low Current

RESET : Low; External clock : off; CK and CK : LOW; CKE : FLOATING ; CS, Command, Address, Bank Address, Data IO : FLOATING ; ODT Signal :

FLOATING

- 26 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

NOTE :

1) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B

2) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B; RTT_Wr enable: set MR2 A[10,9] = 10B

3) Precharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12=1B for Fast Exit

4) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature

5) Self-Refresh Temperature Range (SRT): set MR2 A7=0B for normal or 1B for extended temperature range

6) Refer to DRAM supplier data sheet and/or DIMM SPD to determine if optional features or requirements are supported by DDR3 SDRAM device

7) IDD current measure method and detail patterns are described on DDR3 component datasheet

8) VDD and VDDQ are merged on module PCB.

9) DIMM IDD SPEC is measured with Qoff condition

(IDDQ values are not considered)

- 23 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

16. IDD SPEC Table

M392B2873GB0 : 1GB(128Mx72) Module

NOTE :

1. DIMM IDD SPEC is calculated with considering de-actived rank(IDLE) is IDD2N.

M392B5673GB0 : 2GB(256Mx72) Module

NOTE :

1. DIMM IDD SPEC is calculated with considering de-actived rank(IDLE) is IDD2N.

Symbol CF8

(DDR3-1066@CL=7)

CH9

(DDR3-1333@CL=9)

CK0

(DDR3-1600@CL=11)

CMA

(DDR3-1866@CL=13) Unit NOTE

IDD0 955 985 1035 1080 mA 1

IDD1 1000 1048 1152 1170 mA 1

IDD2P0(slow exit) 630 670 720 720 mA

IDD2P1(fast exit) 648 688 738 738 mA

IDD2N 745 785 825 870 mA

IDD2Q 725 765 805 850 mA

IDD3P 675 715 765 765 mA

IDD3N 780 820 860 860 mA

IDD4R 1180 1300 1440 1530 mA 1

IDD4W 1190 1310 1450 1585 mA 1

IDD5B 1365 1450 1490 1625 mA 1

IDD6 120 120 120 120 mA

IDD7 1585 1840 1935 1980 mA 1

IDD8 120 120 120 120 mA

Symbol CF8

(DDR3-1066@CL=7)

CH9

(DDR3-1333@CL=9)

CK0

(DDR3-1600@CL=11)

CMA

(DDR3-1866@CL=13) Unit NOTE

IDD0 1090 1120 1170 1260 mA 1

IDD1 1135 1183 1287 1305 mA 1

IDD2P0(slow exit) 720 760 810 810 mA

IDD2P1(fast exit) 756 796 846 846 mA

IDD2N 880 920 960 1050 mA

IDD2Q 860 900 940 1030 mA

IDD3P 810 850 900 900 mA

IDD3N 960 1000 1040 1040 mA

IDD4R 1315 1435 1575 1710 mA 1

IDD4W 1325 1445 1585 1765 mA 1

IDD5B 1500 1585 1625 1805 mA 1

IDD6 210 210 210 210 mA

IDD7 1720 1975 2070 2160 mA 1

IDD8 210 210 210 210 mA

- 24 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

M392B5670GB0 : 2GB(256Mx72) Module

NOTE :

1. DIMM IDD SPEC is calculated with considering de-actived rank(IDLE) is IDD2N.

Symbol CF8

(DDR3-1066@CL=7)

CH9

(DDR3-1333@CL=9)

CK0

(DDR3-1600@CL=11)

CMA

(DDR3-1866@CL=13) Unit NOTE

IDD0 1270 1300 1350 1440 mA 1

IDD1 1360 1426 1530 1620 mA 1

IDD2P0(slow exit) 720 760 810 810 mA

IDD2P1(fast exit) 756 796 846 846 mA

IDD2N 880 920 960 1050 mA

IDD2Q 860 900 940 1030 mA

IDD3P 810 850 900 900 mA

IDD3N 960 1000 1040 1040 mA

IDD4R 1630 1840 2070 2250 mA 1

IDD4W 1730 1940 2170 2350 mA 1

IDD5B 2130 2260 2300 2570 mA 1

IDD6 210 210 210 210 mA

IDD7 2440 2920 3024 3150 mA 1

IDD8 210 210 210 210 mA

- 25 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

17. Input/Output Capacitance

[ Table 14 ] Input/Output Capacitance

NOTE : This parameter is Component Input/Output Capacitance so that is different from Module level Capacitance.

1. Although the DM, TDQS and TDQS pins have different functions, the loading matches DQ and DQS

2. This parameter is not subject to production test. It is verified by design and characterization.

The capacitance is measured according to JEP147("PROCEDURE FOR MEASURING INPUT CAPACITANCE USING A VECTOR NETWORK ANALYZER( VNA)") with

VDD, VDDQ, VSS, VSSQ applied and all other pins floating (except the pin under test, CKE, RESET and ODT as necessary). VDD=VDDQ=1.5V, VBIAS=VDD/2 and on-die

termination off.

3. This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here

4. Absolute value of CCK-CCK

5. Absolute value of CIO(DQS)-CIO(DQS)

6. CI applies to ODT, CS, CKE, A0-A15, BA0-BA2, RAS, CAS, WE.

7. CDI_CTRL applies to ODT, CS and CKE

8. CDI_CTRL=CI(CTRL)-0.5*(CI(CLK)+CI(CLK))

9. CDI_ADD_CMD applies to A0-A15, BA0-BA2, RAS, CAS and WE

10. CDI_ADD_CMD=CI(ADD_CMD) - 0.5*(CI(CLK)+CI(CLK))

11. CDIO=CIO(DQ,DM) - 0.5*(CIO(DQS)+CIO(DQS))

12. Maximum external load capacitance on ZQ pin: 5pF

Parameter Symbol DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Units NOTE

Min Max Min Max Min Max Min Max Min Max

Input/output capacitance

(DQ, DM, DQS, DQS, TDQS, TDQS)CIO 1.5 3.0 1.5 2.7 1.5 2.5 1.5 2.3 1.4 2.2 pF 1,2,3

Input capacitance

(CK and CK) CCK 0.8 1.6 0.8 1.6 0.8 1.4 0.8 1.4 0.8 1.3 pF 2,3

Input capacitance delta

(CK and CK) CDCK 0 0.15 0 0.15 0 0.15 0 0.15 0 0.15 pF 2,3,4

Input capacitance

(All other input-only pins) CI 0.75 1.5 0.75 1.5 0.75 1.3 0.75 1.3 0.75 1.2 pF 2,3,6

Input capacitance delta

(DQS and DQS) CDDQS 0 0.2 0 0.2 0 0.15 0 0.15 0 0.15 pF 2,3,5

Input capacitance delta

(All control input-only pins) CDI_CTRL -0.5 0.3 -0.5 0.3 -0.4 0.2 -0.4 0.2 -0.4 0.2 pF 2,3,7,8

Input capacitance delta

(all ADD and CMD input-only pins) CDI_ADD_CMD -0.5 0.5 -0.5 0.5 -0.4 0.4 -0.4 0.4 -0.4 0.4 pF 2,3,9,10

Input/output capacitance delta

(DQ, DM, DQS, DQS, TDQS, TDQS)CDIO -0.5 0.3 -0.5 0.3 -0.5 0.3 -0.5 0.3 -0.5 0.3 pF 2,3,11

Input/output capacitance of ZQ pin CZQ - 3 - 3 - 3 - 3 - 3 pF 2, 3, 12

- 31 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

18. Electrical Characteristics and AC timing

(0 °C<TCASE ≤95 °C, VDDQ = 1.5V ± 0.075V; VDD = 1.5V ± 0.075V)

18.1 Refresh Parameters by Device Density

NOTE :

1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or requirements referred to in

this material.

18.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin

18.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin

DDR3 SDRAM Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.

[ Table 15 ] DDR3-800 Speed Bins

Parameter Symbol 1Gb 2Gb 4Gb 8Gb Units NOTE

All Bank Refresh to active/refresh cmd time tRFC 110 160 300 350 ns

Average periodic refresh interval tREFI

0 °C ≤ TCASE ≤ 85°C7.8 7.8 7.8 7.8 µs

85 °C < TCASE ≤ 95°C3.9 3.9 3.9 3.9 µs 1

Speed DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866

Units NOTEBin (CL - tRCD - tRP) 6-6-6 7-7-7 9-9-9 11-11-11 13-13-13

Parameter min min min min min

CL 6791113tCK

tRCD 15 13.13 13.5 13.75 13.91 ns

tRP 15 13.13 13.5 13.75 13.91 ns

tRAS 37.5 37.5 36 35 34 ns

tRC 52.5 50.63 49.5 48.75 47.91 ns

tRRD 10 7.5 6.0 6.0 5.0 ns

tFAW 40 37.5 30 30 27 ns

Speed DDR3-800

Units NOTECL-nRCD-nRP 6 - 6 - 6

Parameter Symbol min max

Internal read command to first data tAA 15 20 ns

ACT to internal read or write delay time tRCD 15 -ns

PRE command period tRP 15 -ns

ACT to ACT or REF command period tRC 52.5 -ns

ACT to PRE command period tRAS 37.5 9*tREFI ns

CL = 6 / CWL = 5 tCK(AVG) 2.5 3.3 ns 1,2,3

Supported CL Settings 6nCK

Supported CWL Settings 5nCK

- 32 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

[ Table 16 ] DDR3-1066 Speed Bins

[ Table 17 ] DDR3-1333 Speed Bins

Speed DDR3-1066

Units NOTECL-nRCD-nRP 7 - 7 - 7

Parameter Symbol min max

Internal read command to first data tAA 13.125 20 ns

ACT to internal read or write delay time tRCD 13.125 -ns

PRE command period tRP 13.125 -ns

ACT to ACT or REF command period tRC 50.625 -ns

ACT to PRE command period tRAS 37.5 9*tREFI ns

CL = 6 CWL = 5 tCK(AVG) 2.5 3.3 ns 1,2,3,5

CWL = 6 tCK(AVG) Reserved ns 1,2,3,4

CL = 7 CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,4,9

CL = 8 CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3

Supported CL Settings 6,7,8 nCK

Supported CWL Settings 5,6 nCK

Speed DDR3-1333

Units NOTECL-nRCD-nRP 9 -9 - 9

Parameter Symbol min max

Internal read command to first data tAA 13.5 (13.125)920 ns

ACT to internal read or write delay time tRCD 13.5 (13.125)9-ns

PRE command period tRP 13.5 (13.125)9-ns

ACT to ACT or REF command period tRC 49.5 (49.125)9-ns

ACT to PRE command period tRAS 36 9*tREFI ns

CL = 6

CWL = 5 tCK(AVG) 2.5 3.3 ns 1,2,3,6

CWL = 6 tCK(AVG) Reserved ns 1,2,3,4,6

CWL = 7 tCK(AVG) Reserved ns 4

CL = 7

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,4,6

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4

CL = 8

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,6

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4

CL = 9 CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 <1.875 ns 1,2,3,4,9

CL = 10 CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) Reserved ns 1,2,3

Supported CL Settings 6,7,8,9 nCK

Supported CWL Settings 5,6,7 nCK

- 33 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

[ Table 18 ] DDR3-1600 Speed Bins

Speed DDR3-1600

Units NOTECL-nRCD-nRP 11-11-11

Parameter Symbol min max

Intermal read command to first data tAA 13.75

(13.125)920 ns

ACT to internal read or write delay time tRCD 13.75

(13.125)9-ns

PRE command period tRP 13.75

(13.125)9-ns

ACT to ACT or REF command period tRC 48.75

(48.125)9-ns

ACT to PRE command period tRAS 35 9*tREFI ns

CL = 6

CWL = 5 tCK(AVG) 2.5 3.3 ns 1,2,3,7

CWL = 6 tCK(AVG) Reserved ns 1,2,3,4,7

CWL = 7, 8 tCK(AVG) Reserved ns 4

CL = 7

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,4,7

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4,7

CWL = 8 tCK(AVG) Reserved ns 4

CL = 8

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,7

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4,7

CWL = 8 tCK(AVG) Reserved ns 1,2,3,4

CL = 9

CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 <1.875 ns 1,2,3,4,7

CWL = 8 tCK(AVG) Reserved ns 1,2,3,4

CL = 10

CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 <1.875 ns 1,2,3,7

CWL = 8 tCK(AVG) Reserved ns 1,2,3,4

CL = 11 CWL = 5,6,7 tCK(AVG) Reserved ns 4

CWL = 8 tCK(AVG) 1.25 <1.5 ns 1,2,3,9

Supported CL Settings 6,7,8,9,10,11 nCK

Supported CWL Settings 5,6,7,8 nCK

- 34 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

[ Table 19 ] DDR3-1866 Speed Bins

Speed DDR3-1866

Units NOTECL-nRCD-nRP 13-13-13

Parameter Symbol min max

Internal read command to first data tAA 13.91

(13.125)10 20 ns

ACT to internal read or write delay time tRCD 13.91

(13.125)10 -ns

PRE command period tRP 13.91

(13.125)10 -ns

ACT to ACT or REF command period tRC 47.91

(47.125)10 -ns

ACT to PRE command period tRAS 34 9*tREFI ns

CL = 6

CWL = 5 tCK(AVG) 2.5 3.3 ns 1,2,3,8

CWL = 6 tCK(AVG) Reserved ns 1,2,3,4,8

CWL = 7,8,9 tCK(AVG) Reserved ns 4

CL = 7

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 2.5 ns 1,2,3,4,8

CWL = 7,8,9 tCK(AVG) Reserved ns 4

CL = 8

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,8

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4,8

CWL = 8,9 tCK(AVG) Reserved ns 4

CL = 9

CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 1.875 ns 1,2,3,4,8

CWL = 8 tCK(AVG) Reserved ns 4

CWL = 9 tCK(AVG) Reserved ns 4

CL = 10

CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 <1.875 ns 1,2,3,8

CWL = 8 tCK(AVG) Reserved ns 1,2,3,4,8

CL = 11

CWL = 5,6,7 tCK(AVG) Reserved ns 4

CWL = 8 tCK(AVG) 1.25 1.5 ns 1,2,3,4,8

CWL = 9 tCK(AVG) Reserved ns 1,2,3,4

CL = 12 CWL = 5,6,7,8 tCK(AVG) Reserved ns 4

CWL = 9 tCK(AVG) Reserved ns 1,2,3,4

CL = 13 CWL = 5,6,7,8 tCK(AVG) Reserved ns 4

CWL = 9 tCK(AVG) 1.07 <1.25 ns 1,2,3,9

Supported CL Settings 6,7,8,9,10,11,13 nCK

Supported CWL Settings 5,6,7,8,9 nCK

- 35 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

18.3.1 Speed Bin Table Notes

Absolute Specification (TOPER; VDDQ = VDD = 1.5V +/- 0.075 V);

NOTE :

1. The CL setting and CWL setting result in tCK(AVG).MIN and tCK(AVG).MAX requirements. When making a selection of tCK(AVG), both need to be fulfilled: Requirements

from CL setting as well as requirements from CWL setting.

2. tCK(AVG).MIN limits: Since CAS Latency is not purely analog - data and strobe output are synchronized by the DLL - all possible intermediate frequencies may not be guar-

anteed. An application should use the next smaller JEDEC standard tCK(AVG) value (2.5, 1.875, 1.5, or 1.25 ns) when calculating CL [nCK] = tAA [ns] / tCK(AVG) [ns],

rounding up to the next "SupportedCL".

3. tCK(AVG).MAX limits: Calculate tCK(AVG) = tAA.MAX / CL SELECTED and round the resulting tCK(AVG) down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875 ns or

1.25 ns). This result is tCK(AVG).MAX corresponding to CL SELECTED.

4. "Reserved" settings are not allowed. User must program a different value.

5. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/

Characterization.

6. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/

Characterization.

7. Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/

Characterization.

8. Any DDR3-1866 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/

Characterization.

9. For devices supporting optional downshift to CL=7 and CL=9, tAA/tRCD/tRP min must be 13.125 ns or lower. SPD settings must be programmed to match. For example,

DDR3-1333(CL9) devices supporting downshift to DDR3-1066(CL7) should program 13.125 ns in SPD bytes for tAAmin (Byte 16), tRCDmin (Byte 18), and tRPmin (Byte

20). DDR3-1600(CL11) devices supporting downshift to DDR3-1333(CL9) or DDR3-1066(CL7) should program 13.125 ns in SPD bytes for tAAmin (Byte16), tRCDmin (Byte

18), and tRPmin (Byte 20). DDR3-1866(CL13) devices supporting downshift to DDR3-1600(CL11) or DDR3-1333(CL9) or DDR3-1066(CL7) should program 13.125 ns in

SPD bytes for tAAmin (Byte16), tRCDmin (Byte 18), and tRPmin (Byte 20). DDR3-1600 devices supporting down binning to DDR3-1333 or DDR3-1066 should program

13.125ns in SPD byte for tAAmin (Byte 16), tRCDmin (Byte 18) and tRPmin (Byte 20). Once tRP (Byte 20) is programmed to 13.125ns, tRCmin (Byte 21,23) also should be

programmed accodingly. For example, 49.125ns, (tRASmin + tRPmin = 36ns + 13.125ns) for DDR3-1333 and 48.125ns (tRASmin + tRPmin = 35ns + 13.125ns) for DDR3-

1600.

10. For devices supporting optional down binning to CL=11, CL=9 and CL=7, tAA/tRCD/tRPmin must be 13.125ns. SPD setting must be programed to match. For example,

DDR3-1866 devices supporting down binning to DDR3-1600 or DDR3-1333 or 1066 should program 13.125ns in SPD bytes for tAAmin(byte16), tRCDmin(Byte18) and tRP-

min (byte20). Once tRP (Byte20) is programmed to 13.125ns, tRCmin (Byte21,23) also should be programmed accordingly. For example, 47.125ns (tRASmin + tRPmin =

34ns + 13.125ns)

- 36 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

19. Timing Parameters by Speed Grade

[ Table 20 ] Timing Parameters by Speed Bins for DDR3-800 to DDR3-1333

Speed DDR3-800 DDR3-1066 DDR3-1333

Units NOTE

Parameter Symbol MIN MAX MIN MAX MIN MAX

Clock Timing

Minimum Clock Cycle Time (DLL off mode) tCK(DLL_OFF) 8 - 8 - 8 - ns 6

Average Clock Period tCK(avg) See Speed Bins Table ps

Clock Period tCK(abs) tCK(avg)min +

tJIT(per)min

tCK(avg)max +

tJIT(per)max

tCK(avg)min +

tJIT(per)min

tCK(avg)max +

tJIT(per)max

tCK(avg)min +

tJIT(per)min

tCK(avg)max +

tJIT(per)max ps

Average high pulse width tCH(avg) 0.47 0.53 0.47 0.53 0.47 0.53 tCK(avg)

Average low pulse width tCL(avg) 0.47 0.53 0.47 0.53 0.47 0.53 tCK(avg)

Clock Period Jitter tJIT(per) -100 100 -90 90 -80 80 ps

Clock Period Jitter during DLL locking period tJIT(per, lck) -90 90 -80 80 -70 70 ps

Cycle to Cycle Period Jitter tJIT(cc) 200 180 160 ps

Cycle to Cycle Period Jitter during DLL locking period tJIT(cc, lck) 180 160 140 ps

Cumulative error across 2 cycles tERR(2per) - 147 147 - 132 132 - 118 118 ps

Cumulative error across 3 cycles tERR(3per) - 175 175 - 157 157 - 140 140 ps

Cumulative error across 4 cycles tERR(4per) - 194 194 - 175 175 - 155 155 ps

Cumulative error across 5 cycles tERR(5per) - 209 209 - 188 188 - 168 168 ps

Cumulative error across 6 cycles tERR(6per) - 222 222 - 200 200 - 177 177 ps

Cumulative error across 7 cycles tERR(7per) - 232 232 - 209 209 - 186 186 ps

Cumulative error across 8 cycles tERR(8per) - 241 241 - 217 217 - 193 193 ps

Cumulative error across 9 cycles tERR(9per) - 249 249 - 224 224 - 200 200 ps

Cumulative error across 10 cycles tERR(10per) - 257 257 - 231 231 - 205 205 ps

Cumulative error across 11 cycles tERR(11per) - 263 263 - 237 237 - 210 210 ps

Cumulative error across 12 cycles tERR(12per) - 269 269 - 242 242 - 215 215 ps

Cumulative error across n = 13, 14 ... 49, 50 cycles tERR(nper) tERR(nper)min = (1 + 0.68ln(n))*tJIT(per)min

tERR(nper)max = (1 = 0.68ln(n))*tJIT(per)max ps 24

Absolute clock HIGH pulse width tCH(abs) 0.43 -0.43 -0.43 -tCK(avg) 25

Absolute clock Low pulse width tCL(abs) 0.43 -0.43 -0.43 -tCK(avg) 26

Data Timing

DQS,DQS to DQ skew, per group, per access tDQSQ -200 -150 -125 ps 13

DQ output hold time from DQS, DQS tQH 0.38 -0.38 -0.38 -tCK(avg) 13, g

DQ low-impedance time from CK, CK tLZ(DQ) -800 400 -600 300 -500 250 ps 13,14, f

DQ high-impedance time from CK, CK tHZ(DQ) -400 -300 -250 ps 13,14, f

Data setup time to DQS, DQS referenced

to VIH(AC)VIL(AC) levels

tDS(base)

AC175 75 -25 -- - ps d, 17

tDS(base)

AC150 125 -75 -30 -ps d, 17

Data hold time to DQS, DQS referenced

to VIH(AC)VIL(AC) levels

tDH(base)

DC100 150 -100 -65 -ps d, 17

DQ and DM Input pulse width for each input tDIPW 600 -490 -400 -ps 28

Data Strobe Timing

DQS, DQS differential READ Preamble tRPRE 0.9 NOTE 19 0.9 NOTE 19 0.9 NOTE 19 tCK 13, 19, g

DQS, DQS differential READ Postamble tRPST 0.3 NOTE 11 0.3 NOTE 11 0.3 NOTE 11 tCK 11, 13, b

DQS, DQS differential output high time tQSH 0.38 -0.38 -0.4 -tCK(avg) 13, g

DQS, DQS differential output low time tQSL 0.38 -0.38 -0.4 -tCK(avg) 13, g

DQS, DQS differential WRITE Preamble tWPRE 0.9 -0.9 -0.9 - tCK

DQS, DQS differential WRITE Postamble tWPST 0.3 -0.3 -0.3 - tCK

DQS, DQS rising edge output access time from rising CK, CK tDQSCK -400 400 -300 300 -255 255 ps 13,f

DQS, DQS low-impedance time (Referenced from RL-1) tLZ(DQS) -800 400 -600 300 -500 250 ps 13,14,f

DQS, DQS high-impedance time (Referenced from RL+BL/2) tHZ(DQS) -400 -300 -250 ps 12,13,14

DQS, DQS differential input low pulse width tDQSL 0.45 0.55 0.45 0.55 0.45 0.55 tCK 29, 31

DQS, DQS differential input high pulse width tDQSH 0.45 0.55 0.45 0.55 0.45 0.55 tCK 30, 31

DQS, DQS rising edge to CK, CK rising edge tDQSS -0.25 0.25 -0.25 0.25 -0.25 0.25 tCK(avg) c

DQS,DQS falling edge setup time to CK, CK rising edge tDSS 0.2 -0.2 -0.2 -tCK(avg) c, 32

DQS,DQS falling edge hold time to CK, CK rising edge tDSH 0.2 -0.2 -0.2 -tCK(avg) c, 32

- 37 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

[ Table 20 ] Timing Parameters by Speed Bins for DDR3-800 to DDR3-1333 (Cont.)

Speed DDR3-800 DDR3-1066 DDR3-1333

Units NOTE

Parameter Symbol MIN MAX MIN MAX MIN MAX

Command and Address Timing

DLL locking time tDLLK 512 -512 -512 -nCK

internal READ Command to PRECHARGE Command delay tRTP max

(4nCK,7.5ns) -max

(4nCK,7.5ns) - e

Delay from start of internal write transaction to internal read com-

mand tWTR max

(4nCK,7.5ns) -max

(4nCK,7.5ns) -e,18

WRITE recovery time tWR 15 -15 -15 -ns e

Mode Register Set command cycle time tMRD 4 - 4 - 4 - nCK

Mode Register Set command update delay tMOD max

(12nCK,15ns) -max

(12nCK,15ns) -

CAS# to CAS# command delay tCCD 4 - 4 - 4 - nCK

Auto precharge write recovery + precharge time tDAL(min) WR + roundup (tRP / tCK(AVG)) nCK

Multi-Purpose Register Recovery Time tMPRR 1 - 1 - 1 - nCK 22

ACTIVE to PRECHARGE command period tRAS See “Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin” on page 42 ns e

ACTIVE to ACTIVE command period for 1KB page size tRRD max

(4nCK,10ns) -max

(4nCK,7.5ns) -max

(4nCK,6ns) - e

ACTIVE to ACTIVE command period for 2KB page size tRRD max

(4nCK,10ns) -max

(4nCK,7.5ns) - e

Four activate window for 1KB page size tFAW 40 -37.5 -30 -ns e

Four activate window for 2KB page size tFAW 50 -50 -45 -ns e

Command and Address setup time to CK, CK referenced to

VIH(AC) / VIL(AC) levels

tIS(base)

AC175 200 -125 -65 -ps b,16

tIS(base)

AC150 200+150 -125+150 -65+125 -ps b,16,27

Command and Address hold time from CK, CK referenced to

VIH(AC) / VIL(AC) levels

tIH(base)

DC100 275 -200 -140 -ps b,16

Control & Address Input pulse width for each input tIPW 900 -780 -620 -ps 28

Calibration Timing

Power-up and RESET calibration time tZQinitI 512 -512 -512 -nCK

Normal operation Full calibration time tZQoper 256 -256 -256 -nCK

Normal operation short calibration time tZQCS 64 -64 -64 -nCK 23

Reset Timing

Exit Reset from CKE HIGH to a valid command tXPR max(5nCK,

tRFC + 10ns) -max(5nCK,

tRFC + 10ns) -

Self Refresh Timing

Exit Self Refresh to commands not requiring a locked DLL tXS max(5nCK,tRF

C + 10ns) -max(5nCK,tRF

C + 10ns) -

Exit Self Refresh to commands requiring a locked DLL tXSDLL tDLLK(min) -tDLLK(min) -tDLLK(min) -nCK

Minimum CKE low width for Self refresh entry to exit timing tCKESR tCKE(min) +

1tCK -tCKE(min) +

1tCK -

Valid Clock Requirement after Self Refresh Entry (SRE) or Power-

Down Entry (PDE) tCKSRE max(5nCK,

10ns) -max(5nCK,

10ns) -

Valid Clock Requirement before Self Refresh Exit (SRX) or Power-

Down Exit (PDX) or Reset Exit tCKSRX max(5nCK,

10ns) -max(5nCK,

10ns) -

- 38 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

[ Table 20 ] Timing Parameters by Speed Bins for DDR3-800 to DDR3-1333 (Cont.)

Speed DDR3-800 DDR3-1066 DDR3-1333

Units NOTE

Parameter Symbol MIN MAX MIN MAX MIN MAX

Power Down Timing

Exit Power Down with DLL on to any valid command;Exit Pre-

charge Power Down with DLL

frozen to commands not requiring a locked DLL

tXP

max

(3nCK,

7.5ns)

max

(3nCK,

7.5ns)

-max

(3nCK,6ns) -

Exit Precharge Power Down with DLL frozen to commands re-

quiring a locked DLL tXPDLL

max

(10nCK,

24ns)

max

(10nCK,

24ns)

max

(10nCK,

24ns)

- 2

CKE minimum pulse width tCKE

max

(3nCK,

7.5ns)

max

(3nCK,

5.625ns)

max

(3nCK,

5.625ns)

Command pass disable delay tCPDED 1 - 1 - 1 - nCK

Power Down Entry to Exit Timing tPD tCKE(min) 9*tREFI tCKE(min) 9*tREFI tCKE(min) 9*tREFI tCK 15

Timing of ACT command to Power Down entry tACTPDEN 1 - 1 - 1 - nCK 20

Timing of PRE command to Power Down entry tPRPDEN 1 - 1 - 1 - nCK 20

Timing of RD/RDA command to Power Down entry tRDPDEN RL + 4 +1 -RL + 4 +1 -RL + 4 +1 -

Timing of WR command to Power Down entry

(BL8OTF, BL8MRS, BC4OTF) tWRPDEN

WL + 4

+(tWR/

tCK(avg))

WL + 4

+(tWR/

tCK(avg))

WL + 4

+(tWR/

tCK(avg))

-nCK 9

Timing of WRA command to Power Down entry

(BL8OTF, BL8MRS, BC4OTF) tWRAPDEN WL+4+WR +1 -WL+4+WR+1 -WL+4+WR+1 -nCK 10

Timing of WR command to Power Down entry

(BC4MRS) tWRPDEN

WL + 2

+(tWR/

tCK(avg))

WL + 2

+(tWR/

tCK(avg))

WL + 2

+(tWR/

tCK(avg))

-nCK 9

Timing of WRA command to Power Down entry

(BC4MRS) tWRAPDEN WL +2 +WR

+1 -WL +2 +WR

+1 -nCK 10

Timing of REF command to Power Down entry tREFPDEN 1 - 1 - 1 - 20,21

Timing of MRS command to Power Down entry tMRSPDEN tMOD(min) -tMOD(min) -tMOD(min) -

ODT Timing

ODT high time without write command or with write command

and BC4 ODTH4 4 - 4 - 4 - nCK

ODT high time with Write command and BL8 ODTH8 6 - 6 - 6 - nCK

Asynchronous RTT turn-on delay (Power-Down with DLL fro-

zen) tAONPD 28.5 28.5 28.5 ns

Asynchronous RTT turn-off delay (Power-Down with DLL fro-

zen) tAOFPD 28.5 28.5 28.5 ns

RTT turn-on tAON -400 400 -300 300 -250 250 ps 7,f

RTT_NOM and RTT_WR turn-off time from ODTLoff reference tAOF 0.3 0.7 0.3 0.7 0.3 0.7 tCK(avg) 8,f

RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 0.3 0.7 tCK(avg) f

Write Leveling Timing

First DQS pulse rising edge after tDQSS margining mode is pro-

grammed tWLMRD 40 -40 -40 - tCK 3

DQS/DQS delay after tDQS margining mode is programmed tWLDQSEN 25 -25 -25 - tCK 3

Write leveling setup time from rising CK, CK crossing to rising

DQS, DQS crossing tWLS 325 -245 -195 -ps

Write leveling hold time from rising DQS, DQS crossing to rising

CK, CK crossing tWLH 325 -245 -195 -ps

Write leveling output delay tWLO 090909ns

Write leveling output error tWLOE 020202ns

- 39 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

[ Table 21 ] Timing Parameters by Speed Bins for DDR3-1600, DDR3-1866

Speed DDR3-1600 DDR3-1866

Units NOTE

Parameter Symbol MIN MAX MIN MAX

Clock Timing

Minimum Clock Cycle Time (DLL off mode) tCK(DLL_OFF) 8 - 8 - ns 6

Average Clock Period tCK(avg) See Speed Bins Table ps

Clock Period tCK(abs) tCK(avg)min + tJIT(per)min tCK(avg)max +

tJIT(per)max

tCK(avg)min +

tJIT(per)min

tCK(avg)max +

tJIT(per)max ps

Average high pulse width tCH(avg) 0.47 0.53 0.47 0.53 tCK(avg)

Average low pulse width tCL(avg) 0.47 0.53 0.47 0.53 tCK(avg)

Clock Period Jitter tJIT(per) -70 70 -60 60 ps

Clock Period Jitter during DLL locking period tJIT(per, lck) -60 60 -50 50 ps

Cycle to Cycle Period Jitter tJIT(cc) 140 120 ps

Cycle to Cycle Period Jitter during DLL locking period tJIT(cc, lck) 120 100 ps

Cumulative error across 2 cycles tERR(2per) -103 103 -88 88 ps

Cumulative error across 3 cycles tERR(3per) -122 122 -105 105 ps

Cumulative error across 4 cycles tERR(4per) -136 136 -117 117 ps

Cumulative error across 5 cycles tERR(5per) -147 147 -126 126 ps

Cumulative error across 6 cycles tERR(6per) -155 155 -133 133 ps

Cumulative error across 7 cycles tERR(7per) -163 163 -139 139 ps

Cumulative error across 8 cycles tERR(8per) -169 169 -145 145 ps

Cumulative error across 9 cycles tERR(9per) -175 175 -150 150 ps

Cumulative error across 10 cycles tERR(10per) -180 180 -154 154 ps

Cumulative error across 11 cycles tERR(11per) -184 184 -158 158 ps

Cumulative error across 12 cycles tERR(12per) -188 188 -161 161 ps

Cumulative error across n = 13, 14 ... 49, 50 cycles tERR(nper) tERR(nper)min = (1 + 0.68ln(n))*tJIT(per)min

tERR(nper)max = (1 = 0.68ln(n))*tJIT(per)max ps 24

Absolute clock HIGH pulse width tCH(abs) 0.43 -0.43 -tCK(avg) 25

Absolute clock Low pulse width tCL(abs) 0.43 -0.43 -tCK(avg) 26

Data Timing

DQS,DQS to DQ skew, per group, per access tDQSQ -100 -85 ps 13

DQ output hold time from DQS, DQS tQH 0.38 -0.38 -tCK(avg) 13, g

DQ low-impedance time from CK, CK tLZ(DQ) -450 225 -390 195 ps 13,14, f

DQ high-impedance time from CK, CK tHZ(DQ) - 225 -195 ps 13,14, f

Data setup time to DQS, DQS referenced to VIH(AC)VIL(AC) lev-

els

tDS(base)

AC150 - - TBD -ps d, 17

tDS(base)

AC125 10 -TBD -ps d, 17

Data hold time to DQS, DQS referenced to VIH(AC)VIL(AC) levels tDH(base)

DC100 45 -TBD -ps d, 17

DQ and DM Input pulse width for each input tDIPW 360 -320 -ps 28

Data Strobe Timing

DQS, DQS differential READ Preamble tRPRE 0.9 NOTE 19 0.9 NOTE 19 tCK 13, 19, g

DQS, DQS differential READ Postamble tRPST 0.3 NOTE 11 0.3 NOTE 11 tCK 11, 13, b

DQS, DQS differential output high time tQSH 0.4 -0.4 -tCK(avg) 13, g

DQS, DQS differential output low time tQSL 0.4 -0.4 -tCK(avg) 13, g

DQS, DQS differential WRITE Preamble tWPRE 0.9 -0.9 - tCK

DQS, DQS differential WRITE Postamble tWPST 0.3 -0.3 - tCK

DQS, DQS rising edge output access time from rising CK, CK tDQSCK -225 225 -195 195 ps 13,f

DQS, DQS low-impedance time (Referenced from RL-1) tLZ(DQS) -450 225 -390 195 ps 13,14,f

DQS, DQS high-impedance time (Referenced from RL+BL/2) tHZ(DQS) -225 -195 ps 12,13,14

DQS, DQS differential input low pulse width tDQSL 0.45 0.55 0.45 0.55 tCK 29, 31

DQS, DQS differential input high pulse width tDQSH 0.45 0.55 0.45 0.55 tCK 30, 31

DQS, DQS rising edge to CK, CK rising edge tDQSS -0.27 0.27 -0.27 0.27 tCK(avg) c

DQS,DQS falling edge setup time to CK, CK rising edge tDSS 0.9 NOTE 19 0.18 -tCK(avg) c, 32

DQS,DQS falling edge hold time to CK, CK rising edge tDSH 0.3 NOTE 11 0.18 -tCK(avg) c, 32

- 40 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

[ Table 21 ] Timing Parameters by Speed Bins for DDR3-1600, DDR3-1866 (Cont.)

Speed DDR3-1600 DDR3-1866

Units NOTE

Parameter Symbol MIN MAX MIN MAX

Command and Address Timing

DLL locking time tDLLK 512 -512 -nCK

internal READ Command to PRECHARGE Command delay tRTP max

(4nCK,7.5ns) -max

(4nCK,7.5ns) - e

Delay from start of internal write transaction to internal read com-

mand tWTR max

(4nCK,7.5ns) -max

(4nCK,7.5ns) -e,18

WRITE recovery time tWR 15 -15 -ns e

Mode Register Set command cycle time tMRD 4 - 4 - nCK

Mode Register Set command update delay tMOD max

(12nCK,15ns) -max

(12nCK,15ns) -

CAS# to CAS# command delay tCCD 4 - 4 - nCK

Auto precharge write recovery + precharge time tDAL(min) WR + roundup (tRP /

tCK(AVG)) nCK

Multi-Purpose Register Recovery Time tMPRR 1 - 1 - nCK 22

ACTIVE to PRECHARGE command period tRAS See “Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin” on page 42 ns e

ACTIVE to ACTIVE command period for 1KB page size tRRD max

(4nCK,6ns) -max

(4nCK, 5ns) - e

ACTIVE to ACTIVE command period for 2KB page size tRRD max

(4nCK,7.5ns) -max

(4nCK, 6ns) - e

Four activate window for 1KB page size tFAW 30 -27 -ns e

Four activate window for 2KB page size tFAW 40 -35 -ns e

Command and Address setup time to CK, CK referenced to

VIH(AC) / VIL(AC) levels

tIS(base)

AC150 45 -TBD -ps b,16

tIS(base)

AC125 45+125 -TBD -ps b,16,27

Command and Address hold time from CK, CK referenced to

VIH(AC) / VIL(AC) levels

tIH(base)

DC100 120 -TBD -ps b,16

Control & Address Input pulse width for each input tIPW 560 -535 -ps 28

Calibration Timing

Power-up and RESET calibration time tZQinitI 512 -max(512nCK,640ns) -nCK

Normal operation Full calibration time tZQoper 256 -max(256nCK,320ns) -nCK

Normal operation short calibration time tZQCS 64 -max(64nCK,80ns) -nCK 23

Reset Timing

Exit Reset from CKE HIGH to a valid command tXPR max(5nCK, tRFC +

10ns) -max(5nCK, tRFC +

10ns) -

Self Refresh Timing

Exit Self Refresh to commands not requiring a locked DLL tXS max(5nCK,tRFC +

10ns) -max(5nCK,tRFC +

10ns) -

Exit Self Refresh to commands requiring a locked DLL tXSDLL tDLLK(min) -tDLLK(min) -nCK

Minimum CKE low width for Self refresh entry to exit timing tCKESR tCKE(min) + 1tCK -tCKE(min) + 1nCK -

Valid Clock Requirement after Self Refresh Entry (SRE) or Power-

Down Entry (PDE) tCKSRE max(5nCK,

10ns) -max(5nCK,

10ns) -

Valid Clock Requirement before Self Refresh Exit (SRX) or Power-

Down Exit (PDX) or Reset Exit tCKSRX max(5nCK,

10ns) -max(5nCK,

10ns) -

- 41 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

[ Table 21 ] Timing Parameters by Speed Bins for DDR3-1600, DDR3-1866 (Cont.)

Speed DDR3-1600 DDR3-1866

Units NOTE

Parameter Symbol MIN MAX MIN MAX

Power Down Timing

Exit Power Down with DLL on to any valid command;Exit Pre-

charge Power Down with DLL

frozen to commands not requiring a locked DLL

tXP max

(3nCK,6ns) -max(3nCK,6ns) -

Exit Precharge Power Down with DLL frozen to commands re-

quiring a locked DLL tXPDLL

max

(10nCK,

24ns)

-max(10nCK,24ns) - 2

CKE minimum pulse width tCKE max

(3nCK,5ns) -max(3nCK,5ns) -

Command pass disable delay tCPDED 1 - 2 - nCK

Power Down Entry to Exit Timing tPD tCKE(min) 9*tREFI tCKE(min) 9*tREFI tCK 15

Timing of ACT command to Power Down entry tACTPDEN 1 - 1 - nCK 20

Timing of PRE command to Power Down entry tPRPDEN 1 - 1 - nCK 20

Timing of RD/RDA command to Power Down entry tRDPDEN RL + 4 +1 -RL + 4 +1 -

Timing of WR command to Power Down entry

(BL8OTF, BL8MRS, BC4OTF) tWRPDEN WL + 4 +(tWR/

tCK(avg)) -WL + 4 +(tWR/

tCK(avg)) -nCK 9

Timing of WRA command to Power Down entry

(BL8OTF, BL8MRS, BC4OTF) tWRAPDEN WL + 4 +WR +1 -WL + 4 +WR +1 -nCK 10

Timing of WR command to Power Down entry

(BC4MRS) tWRPDEN WL + 2 +(tWR/

tCK(avg)) -WL + 2 +(tWR/

tCK(avg)) -nCK 9

Timing of WRA command to Power Down entry

(BC4MRS) tWRAPDEN WL +2 +WR +1 -WL +2 +WR +1 -nCK 10

Timing of REF command to Power Down entry tREFPDEN 1 - 1 - 20,21

Timing of MRS command to Power Down entry tMRSPDEN tMOD(min) - tMOD(min) -

ODT Timing

ODT high time without write command or with write command

and BC4 ODTH4 4 - 4 - nCK

ODT high time with Write command and BL8 ODTH8 6 - 6 - nCK

Asynchronous RTT turn-on delay (Power-Down with DLL fro-

zen) tAONPD 28.5 28.5 ns

Asynchronous RTT turn-off delay (Power-Down with DLL fro-

zen) tAOFPD 28.5 28.5 ns

RTT turn-on tAON -225 225 -195 195 ps 7,f

RTT_NOM and RTT_WR turn-off time from ODTLoff reference tAOF 0.3 0.7 0.3 0.7 tCK(avg) 8,f

RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 tCK(avg) f

Write Leveling Timing

First DQS pulse rising edge after tDQSS margining mode is pro-

grammed tWLMRD 40 -40 - tCK 3

DQS/DQS delay after tDQS margining mode is programmed tWLDQSEN 25 -25 - tCK 3

Write leveling setup time from rising CK, CK crossing to rising

DQS, DQS crossing tWLS 165 -140 -ps

Write leveling hold time from rising DQS, DQS crossing to rising

CK, CK crossing tWLH 165 -140 -ps

Write leveling output delay tWLO 07.5 07.5 ns

Write leveling output error tWLOE 0 2 0 2 ns

- 42 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

19.1 Jitter Notes

Specific Note a Unit ’tCK(avg)’ represents the actual tCK(avg) of the input clock under operation. Unit ’nCK’ represents one clock cycle of the

input clock, counting the actual clock edges.ex) tMRD = 4 [nCK] means; if one Mode Register Set command is registered at Tm,

another Mode Register Set command may be registered at Tm+4, even if (Tm+4 - Tm) is 4 x tCK(avg) + tERR(4per),min.

Specific Note b These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition

edge to its respective clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e.

tJIT(per), tJIT(cc), etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is,

these parameters should be met whether clock jitter is present or not.

Specific Note c These parameters are measured from a data strobe signal (DQS, DQS) crossing to its respective clock signal (CK, CK) crossing.

The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative to the

clock signal crossing. That is, these parameters should be met whether clock jitter is present or not.

Specific Note d These parameters are measured from a data signal (DM, DQ0, DQ1, etc.) transition edge to its respective data strobe signal

(DQS, DQS) crossing.

Specific Note e For these parameters, the DDR3 SDRAM device supports tnPARAM [nCK] = RU{ tPARAM [ns] / tCK(avg) [ns] }, which is in clock

cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP / tCK(avg)},

which is in clock cycles, if all input clock jitter specifications are met. This means: For DDR3-800 6-6-6, of which tRP = 15ns, the

device will support tnRP = RU{tRP / tCK(avg)} = 6, as long as the input clock jitter specifications are met, i.e. Precharge com-

mand at Tm and Active command at Tm+6 is valid even if (Tm+6 - Tm) is less than 15ns due to input clock jitter.

Specific Note f When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(mper),act of the input

clock, where 2 <= m <= 12. (output deratings are relative to the SDRAM input clock.)

For example, if the measured jitter into a DDR3-800 SDRAM has tERR(mper),act,min = - 172 ps and tERR(mper),act,max = +

193 ps, then tDQSCK,min(derated) = tDQSCK,min - tERR(mper),act,max = - 400 ps - 193 ps = - 593 ps and tDQSCK,max(der-

ated) = tDQSCK,max - tERR(mper),act,min = 400 ps + 172 ps = + 572 ps. Similarly, tLZ(DQ) for DDR3-800 derates to

tLZ(DQ),min(derated) = - 800 ps - 193 ps = - 993 ps and tLZ(DQ),max(derated) = 400 ps + 172 ps = + 572 ps. (Caution on the

min/max usage!)

Note that tERR(mper),act,min is the minimum measured value of tERR(nper) where 2 <= n <=

12, and tERR(mper),act,max is the maximum measured value of tERR(nper) where 2 <= n <= 12.

Specific Note g When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per),act of the input

clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR3-800 SDRAM has

tCK(avg),act = 2500 ps, tJIT(per),act,min = - 72 ps and tJIT(per),act,max = + 93 ps, then tRPRE,min(derated) = tRPRE,min +

tJIT(per),act,min = 0.9 x tCK(avg),act + tJIT(per),act,min = 0.9 x 2500 ps - 72 ps = + 2178 ps. Similarly, tQH,min(derated) =

tQH,min + tJIT(per),act,min = 0.38 x tCK(avg),act + tJIT(per),act,min = 0.38 x 2500 ps - 72 ps = + 878 ps. (Caution on the min/

max usage!)

- 43 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

19.2 Timing Parameter Notes

1. Actual value dependant upon measurement level definitions which are TBD.

2. Commands requiring a locked DLL are: READ (and RAP) and synchronous ODT commands.

3. The max values are system dependent.

4. WR as programmed in mode register

5. Value must be rounded-up to next higher integer value

6. There is no maximum cycle time limit besides the need to satisfy the refresh interval, tREFI.

7. For definition of RTT turn-on time tAON see "Device Operation & Timing Diagram Datasheet"

8. For definition of RTT turn-off time tAOF see "Device Operation & Timing Diagram Datasheet".

9. tWR is defined in ns, for calculation of tWRPDEN it is necessary to round up tWR / tCK to the next integer.

10. WR in clock cycles as programmed in MR0

11. The maximum read postamble is bound by tDQSCK(min) plus tQSH(min) on the left side and tHZ(DQS)max on the right side. See "Device Operation & Timing

Diagram Datasheet.

12. Output timing deratings are relative to the SDRAM input clock. When the device is operated with input clock jitter, this parameter needs to be derated

by TBD

13. Value is only valid for RON34

14. Single ended signal parameter. Refer to chapter 8 and chapter 9 for definition and measurement method.

15. tREFI depends on TOPER

16. tIS(base) and tIH(base) values are for 1V/ns CMD/ADD single-ended slew rate and 2V/ns CK, CK differential slew rate, Note for DQ and DM signals,

VREF(DC) = VREFDQ(DC). For input only pins except RESET, VREF(DC)=VREFCA(DC).

See "Address/Command Setup, Hold and Derating" on component datasheet.

17. tDS(base) and tDH(base) values are for 1V/ns DQ single-ended slew rate and 2V/ns DQS, DQS differential slew rate. Note for DQ and DM signals,

VREF(DC)= VREFDQ(DC). For input only pins except RESET, VREF(DC)=VREFCA(DC).

See "Data Setup, Hold and Slew Rate Derating" on component datasheet.

18. Start of internal write transaction is defined as follows ;

For BL8 (fixed by MRS and on-the-fly) : Rising clock edge 4 clock cycles after WL.

For BC4 (on-the-fly) : Rising clock edge 4 clock cycles after WL

For BC4 (fixed by MRS) : Rising clock edge 2 clock cycles after WL

19. The maximum read preamble is bound by tLZDQS(min) on the left side and tDQSCK(max) on the right side. See "Device Operation & Timing Diagram

Datasheet"

20. CKE is allowed to be registered low while operations such as row activation, precharge, autoprecharge or refresh are in progress, but power-down

IDD spec will not be applied until finishing those operations.

21. Although CKE is allowed to be registered LOW after a REFRESH command once tREFPDEN(min) is satisfied, there are cases where additional time

such as tXPDLL(min) is also required. See "Device Operation & Timing Diagram Datasheet".

22. Defined between end of MPR read burst and MRS which reloads MPR or disables MPR function.

23. One ZQCS command can effectively correct a minimum of 0.5 % (ZQCorrection) of RON and RTT impedance error within 64 nCK for all speed bins assuming

the maximum sensitivities specified in the ’Output Driver Voltage and Temperature Sensitivity’ and ’ODT Voltage and Temperature Sensitivity’ tables. The

appropriate interval between ZQCS commands can be determined from these tables and other application specific parameters.

One method for calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and voltage (Vdriftrate) drift rates that the SDRAM is sub-

ject to in the application, is illustrated. The interval could be defined by the following formula:

where TSens = max(dRTTdT, dRONdTM) and VSens = max(dRTTdV, dRONdVM) define the SDRAM temperature and voltage sensitivities.

For example, if TSens = 1.5% /°C, VSens = 0.15% / mV, Tdriftrate = 1°C / sec and Vdriftrate = 15 mV / sec, then the interval between ZQCS commands is calcu-

lated as:

24. n = from 13 cycles to 50 cycles. This row defines 38 parameters.

25. tCH(abs) is the absolute instantaneous clock high pulse width, as measured from one rising edge to the following falling edge.

26. tCL(abs) is the absolute instantaneous clock low pulse width, as measured from one falling edge to the following rising edge.

27. The tIS(base) AC150 specifications are adjusted from the tIS(base) AC175 specification by adding an additional 125 ps for DDR3-800/1066 or 100ps for DDR3-

1333/1600 of derating to accommodate for the lower alternate threshold of 150mV and another 25ps to account for the earlier reference point [(175mv - 150

mV) / 1 V/ns].

28. Pulse width of a input signal is defined as the width between the first crossing of VREF(DC) and the consecutive crossing of VREF(DC)

29. tDQSL describes the instantaneous differential input low pulse width on DQS-DQS, as measured from one falling edge to the next consecutive rising edge.

30. tDQSH describes the instantaneous differential input high pulse width on DQS-DQS, as measured from one rising edge to the next consecutive falling edge.

31. tDQSH, act + tDQSL, act = 1 tCK, act ; with tXYZ, act being the actual measured value of the respective timing parameter in the application.

32. tDSH, act + tDSS, act = 1 tCK, act ; with tXYZ, act being the actual measured value of the respective timing parameter in the application.

33. The tIS(base) AC125 specifications are adjusted from the tIS(base) AC135 specification by adding an additional 75ps for DDR3-1866 to accommodate for the

lower alternate threshold of 125mV and another 10ps to account for the earlier reference point [(135mv - 125mV) / 1 V/ns].

ZQCorrection

(TSens x Tdriftrate) + (VSens x Vdriftrate)

0.5

(1.5 x 1) + (0.15 x 15) = 0.133

128ms

- 39 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

20. Physical Dimensions

20.1 128Mbx8 based 128Mx72 Module (1 Rank) - M392B2873GB0

133.35 ± 0.15

Units : Millimeters

18.10

12.60

47.00 71.00

128.95

9.76 20.92 32.40 20.93 9.74

SPD/TS

1.00

0.2 ± 0.15

2.50 ± 0.20

Detail B

5.00

Detail A

1.50±0.10

0.80 ± 0.05

3.80

2.50

9.9

0.6

R 0.50

Detail C

18.75 ± 0.15

54.675

1.27 ± 0.10

1.0 max

Max 4.0

20.1.1 x72 DIMM, populated as one physical rank of x8 DDR3 SDRAMs

The used device is 128M x8 DDR3 SDRAM, FBGA.

DDR3 SDRAM Part NO : K4B1G0846G-BC**

* NOTE : Tolerances on all dimensions ±0.15 unless otherwise specified.

NOTE : DRAMs indicated with dotted outline are located on the backside of the module.

Address, Command and Control lines

VTT

- 40 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

20.2 128Mbx8 based 256Mx72 Module (2 Ranks) - M392B5673GB0

133.35 ± 0.15

Units : Millimeters

18.10

12.60

1.27 ± 0.10

1.0 max

47.00 71.00

128.95

9.76 20.92 32.40 20.93 9.74

SPD/TS

1.00

0.2 ± 0.15

2.50 ± 0.20

Detail B

5.00

Detail A

1.50±0.10

0.80 ± 0.05

3.80

2.50

9.9

0.6

R 0.50

Detail C

18.75 ± 0.15

54.675

Max 4.0

20.2.1 x72 DIMM, populated as two physical ranks of x8 DDR3 SDRAMs

The used device is 256M x4 DDR3 SDRAM, FBGA.

DDR3 SDRAM Part NO : K4B1G0446G-BC**

* NOTE : Tolerances on all dimensions ±0.15 unless otherwise specified.

Address, Command and Control lines

VTT

SPD/TS

- 41 -

datasheet DDR3 SDRAM

Rev. 1.01

VLP Registered DIMM

20.3 256Mbx4 based 256Mx72 Module (1 Rank) - M392B5670GB0

133.35 ± 0.15

Units : Millimeters

18.10

12.60

1.27 ± 0.10

1.0 max

47.00 71.00

128.95

9.76 20.92 32.40 20.93 9.74

SPD/TS

1.00

0.2 ± 0.15

2.50 ± 0.20

Detail B

5.00

Detail A

1.50±0.10

0.80 ± 0.05

3.80

2.50

9.9

0.6

R 0.50

Detail C

18.75 ± 0.15

54.675

Max 4.0

20.3.1 x72 DIMM, populated as one physical rank of x4 DDR3 SDRAMs

The used device is 256M x4 DDR3 SDRAM, FBGA.

DDR3 SDRAM Part NO : K4B1G0446G-BC**

* NOTE : Tolerances on all dimensions ±0.15 unless otherwise specified.

Address, Command and Control lines

VTT

SPD/TS