Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS 10 30 60
35 50 -
-0.1 -0.7 -1.5
-3.0 - -
-0.45 0.50
11.0 13.0 -
VDS = 2V, VGS =0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
VDS = 2V,
IDS = 10mA,
f = 12GHz
IGS = -10µA
mA
mS
V
V
dB
dB
gm
Vp
VGSO
NF
FHX13LG/LP
FHX14LG/LP
Gas
Noise Figure
Associated Gain
-0.55 0.60
11.0 13.0 -dB
dB
NF
Gas
Condition Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25¡C)
Note: RF parameters for LG/LP devices are measured on a sample basis as follows:
Lot qty. Sample qty. Accept/Reject
1200 or less 125 (0,1)
1201 to 3200 200 (0,1)
3201 to 10000 315 (1,2)
10001 or over 500 (1,2)
AVAILABLE CASE STYLES: LG/LP Channel to Case
Thermal Resistance - 300 400 ¡C/W
Rth
1
Edition 1.1
July 1999
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS 3.5
-3.0
180
-65 to +175
-65 to +150
175
150
FHX13LG
FHX13LP
FHX14LG
FHX14LP
V
V
mW
¡C
¡C
¡C
¡C
Pt*
Tstg
Tch
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25¡C)
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000W.
3. The operating channel temperature (Tch) should not exceed 80¡C.
FEATURES
• Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13)
• High Associated Gain: 13.0dB (Typ.)@f=12GHz
• Lg ²0.15µm, Wg = 200µ m
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available
DESCRIPTION
The FHX13LG/LP, FHX14LG/LP is a Super High Electron Mobility
Transistor(SuperHEMTTM) intended for general purpose, ultra-low noise and high
gain amplifiers in the 2-18GHz frequency range. The devices are
packaged in cost effective, low parasitic, hermetically sealed(LG) or epoxy-
sealed(LP) metal-ceramic packages for high volume telecommunication, DBS,
TVRO, VSAT or other low noise applications.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and con-
sistent performance.
FHX13LG/LP, 14LG/LP
Super Low Noise HEMT
2
FHX13LG/LP, 14LG/LP
Super Low Noise HEMT
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1
02 3 4
Drain-Source Voltage (V)
30
40
20
10
Drain Current (mA)
VGS =0V
-0.2V
-0.6V
-0.8V
-0.4V
LP
LG
POWER DERATING CURVE
100
150
50
200
0
050 100 150 200
Ambient Temperature (¡C)
Total Power Dissipation (mW)
3
FHX13LG/LP, 14LG/LP
Super Low Noise HEMT
Gas
OUTPUT POWER vs. INPUT POWER
FHX13LG
f=12GHz
VDS=2V
IDS=10mA
-10 -5 0 5 10
Input Power (dBm)
15
25
10
5
Output Power (dBm)
Associated Gain (dB)
NF & Gas vs. TEMPERATURE
FHX13LG/LP
f=12GHz
VDS=2V
IDS=10mA
100 2000 300 400
Ambient Temperature (¡K)
1.5
1.0
0.5
15
10
5
Noise Figure (dB)
NF & Gas vs. IDS
FHX13LG/LP
3.0
2.5
2.0
1.5
1.0
0.5
f=12GHz
VDS=2V
VDS=2V
IDS=10mA
14
12
10
9
11
13
10 20 30
Drain Current (mA)
Noise Figure (dB)
Associated Gain (dB)
NF & Gas vs. FREQUENCY
FHX13LG
2
1
3
0
10
5
15
0
4 6 8 10 12 20
Frequency (GHz)
Noise Figure (dB)
Associated Gain (dB)
NF
Gas
Gas
NF
NF
NOISE PARAMETERS
FHX13LG
VDS=2V, IDS=10mA
Freq.
(GHz) Gopt
(MAG) (ANG) NFmin
(dB) Rn/50
2
4
6
8
10
12
14
16
18
0.96
0.92
0.86
0.79
0.71
0.61
0.50
0.38
0.24
29
57
83
107
129
150
168
-175
-161
0.33
0.34
0.35
0.37
0.40
0.45
0.53
0.63
0.83
0.22
0.20
0.15
0.11
0.07
0.04
0.04
0.06
0.10
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
Gopt 1.0 2.0
2.5 3.0
1.5
10 25 50 100
f = 12 GHz
VDS = 2V
IDS = 10mA
Gopt = 0.61Ð150¡
Rn/50 = 0.04
NFmin = 0.45dB
TYPICAL NOISE FIGURE CIRCLE
FHX13LG
20
15
10
5
04 6 8 10 12 20
VDS = 2V
IDS = 10mA
Ga(max)
Frequency (GHz)
Gain (dB)
Ga(max) & |S21|2 vs. FREQUENCY
|S21|2
4
FHX13LG/LP, 14LG/LP
Super Low Noise HEMT
5
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180¡
+90¡
0¡
-90¡
S21
S12
SCALE FOR |S21|
SCALE FOR |S12|
0.02
0.04
0.06
0.08
1
15 15
10
5
10
10
15
20 GHz
20 GHz
20 GHz
20 GHz
1.0 GHz
1.0 GHz
1.0 GHz 1.0 GHz
5
15
10
5
5
2
46
8
25010025 50W
S-PARAMETERS
FHX13/14LG
VDS = 2V, IDS = 10mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
1000 0.988 -20.0 5.327 160.1 0.015 75.7 0.574 -16.3
2000 0.956 -39.5 5.133 141.0 0.028 63.3 0.560 -32.1
3000 0.908 -58.1 4.851 123.0 0.039 50.1 0.539 -47.3
4000 0.862 -75.5 4.534 105.9 0.048 39.0 0.522 -62.0
5000 0.811 -91.6 4.213 89.7 0.053 29.3 0.502 -75.6
6000 0.763 -107.1 3.886 74.4 0.056 21.0 0.488 -89.6
7000 0.727 -121.1 3.582 60.0 0.057 13.2 0.487 -103.0
8000 0.701 -133.3 3.300 46.4 0.056 7.9 0.498 -114.9
9000 0.682 -144.1 3.078 33.8 0.055 3.5 0.515 -125.0
10000 0.659 -154.2 2.899 21.4 0.055 -0.0 0.531 -134.4
11000 0.636 -164.4 2.748 9.3 0.054 -2.6 0.544 -144.0
12000 0.618 -175.4 2.593 -3.3 0.054 -5.2 0.561 -155.1
13000 0.608 175.5 2.466 -14.8 0.054 -5.7 0.590 -164.0
14000 0.596 166.6 2.366 -26.6 0.055 -7.8 0.619 -172.4
15000 0.585 158.3 2.279 -38.3 0.056 -9.7 0.654 -179.7
16000 0.564 148.8 2.244 -50.7 0.058 -12.8 0.677 172.6
17000 0.543 138.2 2.217 -63.6 0.061 -17.6 0.701 163.4
18000 0.525 127.3 2.185 -77.1 0.063 -24.7 0.727 154.1
19000 0.506 116.2 2.143 -91.4 0.063 -33.1 0.748 143.6
20000 0.470 106.5 2.089 -105.4 0.061 -43.7 0.763 137.2
FHX13LG/LP, 14LG/LP
Super Low Noise HEMT
6
S-PARAMETERS
FHX13/14LP
VDS = 2V, IDS = 10mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
1000 0.990 -18.4 5.504 161.6 0.016 77.7 0.597 -13.3
2000 0.957 -36.4 5.351 144.0 0.031 65.7 0.579 -26.4
3000 0.908 -54.0 5.120 126.9 0.044 54.9 0.554 -39.1
4000 0.854 -70.8 4.846 110.6 0.055 44.5 0.526 -51.4
5000 0.793 -87.1 4.555 94.9 0.064 35.2 0.494 -63.2
6000 0.732 -103.0 4.249 79.9 0.071 26.6 0.463 -75.5
7000 0.679 -117.9 3.944 65.6 0.075 18.5 0.441 -88.0
8000 0.637 -131.4 3.656 52.3 0.078 11.7 0.431 -99.6
9000 0.601 -143.5 3.417 39.7 0.082 5.8 0.430 -109.7
10000 0.564 -155.2 3.221 27.6 0.085 0.5 0.428 -119.1
11000 0.530 -167.0 3.058 15.7 0.088 -5.0 0.423 -129.0
12000 0.499 -179.8 2.895 3.5 0.090 -11.1 0.424 -140.4
13000 0.476 169.1 2.752 -8.1 0.093 -16.0 0.436 -150.7
14000 0.454 158.6 2.633 -19.6 0.096 -21.5 0.456 -160.0
15000 0.431 148.7 2.532 -31.2 0.099 -27.4 0.479 -168.2
16000 0.405 137.5 2.463 -43.0 0.104 -34.1 0.495 -176.4
17000 0.379 124.5 2.412 -55.1 0.109 -41.4 0.504 174.0
18000 0.359 112.2 2.349 -67.7 0.113 -50.0 0.519 164.0
19000 0.335 97.9 2.292 -80.7 0.117 -59.0 0.535 153.8
20000 0.305 86.5 2.226 -93.1 0.120 -68.8 0.550 146.6
FHX13LG/LP, 14LG/LP
Super Low Noise HEMT
7
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
0.5
(0.02)
1.0
(0.039)
1.3 Max
(0.051)
0.1
(0.004)
1.5±0.3
(0.059) 1.78±0.15
(0.07) 1.5±0.3
(0.059)
4.78±0.5
Case Style "LG/LP"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source
3. Drain
4. Source
1.5±0.3
(0.059) 1.78±0.15
(0.07) 1.5±0.3
(0.059)
4.78±0.5
Gold Plated Leads
1
2
3
4
FHX13LG/LP, 14LG/LP
Super Low Noise HEMT
SuperHEMTTM is a trademark of Fujitsu Limited.