MMBD4448HAQW/
200mW
Switching Diodes
Features
• Fast Switching Speed
• For General Purpose Switching Applications
• High Conductance, Power Dissipation
• Ultra-Small Surface Mount Package
Maximum Ratings
Symbol
Rating Rating Unit
VRM Non-Repetitive Peak Reverse Voltage 100 V
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage 80 V
VR(RMS) RMS Reverse Voltage 57 V
IFM Forward Continuous Current 500 mA
IO Average Rectified Output Current 250 mA
IFSM Peak Forward Surge Current @1.0μs
@1.0s 4.0
2.0 A
RθJA Thermal Resistance Junction to Ambient
625 ℃/W
PD Power dissipation 200 mW
TJ Junction Temperature 150 ℃
TSTG Storage Temperature -65 to +150 ℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Test Conditions
V(BR) Reverse Breakdown Voltage
80V --- IR=100
μA
IR Reverse Voltage Leakage
Current ---
100 nA
50μA
30
μA
25nA
VR=70V
VR=75V, TJ=150℃
VR=25V, TJ=150℃
VR=20V
VF Forward Voltage
0.62
---
---
---
0.72V
0.855V
1.0V
1.25V
IF=5.0mA
IF=10mA
IF=50mA
IF=150mA
CT Total Capacitance --- 3.5pF VR=6V, f=1MHZ
trr Reverse Recovery Time --- 4.0ns IF=5mA,
VR=6V
www.mccsemi.com
Revision: 2 2006/05/13
SOT-363
INCHES
MM
DIM MIN MAX MIN MAX NOTE
A .004 .012 0.10 0.30
B .045 .053 1.15 1.35
C .079 .087 2.00 2.20
D .026 0.65Nominal
F .012 .016 0.30 0.40
H .071 .087 1.80 2.20
J --- .004 --- 0.10
K .035 .039 0.90 1.00
L .010 .016 0.25 0.40
M .004 .016 0.10 0.25
J
M
A
C
B
G
H
K
D
F
L
omponents
20736 Marilla Street Chatsworth
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MCC
ADW/CDW/SDW/
A1
A2
C2
C1
C2
C1
C1
A3
C2
A1
C3
A2
C1
C2
A2
A1
A2
A1
C2
C1
NC
A
C3
C4
AC
1
AC
2
C2
A1
A2
C1
Marking: KA6
MMBD4448HADW
Marking: KA5
MMBD4448HAQW Marking: KA7
MMBD4448HCDW
Marking: KAA
MMBD4448HTW
Marking: KAB
MMBD4448HSDW
DIMENSIONS
Marking: KA4
MMBD4448HCQW
A2
A1C
A3
A4
CQW/TW
TM
Micro Commercial Components
NC
A2
A2
1 of 4
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0