DS30080 Rev. 7 - 2 1 of 4 MMST2222A
www.diodes.com ãDiodes Incorporated
MMST2222A
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary PNP Type Available (MMST2907A)
·Ultra-Small Surface Mount Package
·Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic Symbol MMST2222A Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC600 mA
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 625 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
M
JL
ED
BC
H
K
G
BE
C
Mechanical Data
·Case: SOT-323
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 4
·Terminal Connections: See Diagram
·Marking (See Page 4): K3P
·Ordering & Date Code Information: See Page 4
·Weight: 0.006 grams (approximate)
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
SOT-323
Dim Min Max
A0.25 0.40
B1.15 1.35
C2.00 2.20
D0.65 Nominal
E0.30 0.40
G1.20 1.40
H1.80 2.20
J0.0 0.10
K0.90 1.00
L0.25 0.40
M0.10 0.18
a0°8°
All Dimensions in mm
E
B
C
SPICE MODEL: MMST2222A
DS30080 Rev. 7 - 2 2 of 4 MMST2222A
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Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V(BR)CBO 75 ¾VIC= 10mA, IE= 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾VIC= 10mA, IB= 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾VIE= 10mA, IC= 0
Collector Cutoff Current ICBO ¾10 nA
mA
VCB = 60V, IE= 0
VCB = 60V, IE= 0, TA= 150°C
Collector Cutoff Current ICEX ¾10 nA VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current IEBO ¾10 nA VEB = 3.0V, IC= 0
Base Cutoff Current IBL ¾20 nA VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE
35
50
75
100
40
50
35
¾
¾
¾
300
¾
¾
¾
¾
IC= 100mA, VCE = 10V
IC= 1.0mA, VCE = 10V
IC= 10mA, VCE = 10V
IC= 150mA, VCE = 10V
IC= 500mA, VCE = 10V
IC= 10mA, VCE = 10V, TA= -55°C
IC= 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.3
1.0 VIC= 150mA, IB= 15mA
IC= 500mA, IB= 50mA
Base-Emitter Saturation Voltage VBE(SAT) 0.6
¾
1.2
2.0 VIC= 150mA, IB= 15mA
IC= 500mA, IB= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾8pF
VCB = 10V, f = 1.0MHz, IE= 0
Input Capacitance Cibo —25pF
VEB = 0.5V, f = 1.0MHz, IC= 0
Current Gain-Bandwidth Product fT300 ¾MHz VCE = 20V, IC= 20mA,
f = 100MHz
Noise Figure NF ¾4.0 dB VCE = 10V, IC= 100mA,
RS= 1.0kW, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td¾10 ns VCC = 30V, IC= 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time tr¾25 ns
Storage Time ts¾225 ns VCC = 30V, IC= 150mA,
IB1 = IB2 = 15mA
Fall Time tf¾60 ns
Notes: 3. Short duration test pulse used to minimize self-heating effect.
DS30080 Rev. 7 - 2 3 of 4 MMST2222A
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0
50
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
A
100
150
200
01
10
1000
100
0.1 110 1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2, Typical DC Current Gain vs
Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2
.
0
I , BASE CURRENT (mA)
Fi
g
.4,T
y
pical Collector Saturation Re
g
ion
B
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I=1mA
CI = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
C , CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
Fi
g
.3,T
y
pical
R
Capacitance Characteristics
0
5
10
15
20
25
30
3
5
0246810 12 14 16 18 20
Cibo
Cobo
f = 1MHz
1
0.1 10 100
V , BASE EMITTER V
O
LTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 6, Base-Emitter Voltage vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9 V=5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
110 100 1000
V,C
O
LLECT
O
RT
O
EMITTER
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5, Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
IC
IB
=10
DS30080 Rev. 7 - 2 4 of 4 MMST2222A
www.diodes.com
1
10
100
1000
1 10 100
I , COLLECTOR CURRENT (mA)
Fi
g
. 7, Gain Bandwidth Product vs. Collector Current
C
f , GAIN BANDWIDTH PRODUCT (MHz)
T
V=5V
CE
Ordering Information (Note 4)
Device Packaging Shipping
MMST2222A-7 SOT-323 3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST2222A-7-F.
Marking Information
K3P
YM
K3P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
