Features
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φ1.25 mm sleeve type ROSA (Receiver Optical
Sub-Assembly)
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High-speed response: 1.25 Gbps
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High gain with AGC (Auto Gain Control):
2.5 V/mW (at -22 dBm)
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Low power supply voltage: Vcc=Vpd=3.3 V
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Differential output
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Sensitivity: +2 to -28 dBm
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Isolation type: Housing and signal ground are
electrically isolated.
Applications
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Gigabit Ethernet
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Fiber channel
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Optical fiber communication
PHOTODIODE
ROSA type, 1.31/1.55 µm, 1.25 Gbps
G9819-14
InGaAs PIN photodiode with preamp
1
■ Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Value Unit
Supply voltage Vcc -0.5, +5.0 V
Reverse voltage (photodiode) VR7 V
Operating temperature Topr -40 to +85 *1°C
Storage temperature Ts t g -40 to +85 *1°C
*1: No condensation
■ Electrical and optical characteristics
(Ta=25 °C, Vcc=3.0 to 3.6 V, Vpd=3.0 to 5.0 V, Vee=0 V, RL=50 Ω *2, λ=1.31 µm, unless otherwise noted)
Parameter Symbol Condition Min. Typ. Max. Unit
λ=1.31 µm 0.75 0.85 -
Responsivity R λ=1.55 µm 0.80 0.90 - A/W
Photo sensitivity *2SPin= -22 dBm *31.8 2.5 -V/mW
Supply current Icc Dark state, RL=∞-45 60 mA
Cut-off frequency *2fc Pin= -22 dBm, -3 dB 850 1000 -MHz
Low cut-off frequency fc-L Pin= -22 dBm, -3 dB -3.5 5kHz
Noise equivalent power *2NEP Dark state, to 938 MHz *3-180 290 nW rms
Trans-impedance Tz f=20 MHz *31.1 1.8 - kΩ
Minimum receivable sensitivity Pmin --28 -26
Maximum receivable sensitivity Pmax
1.25 Gbps, NRZ,
PN=23, BER=10-12,
Extinction ratio 9 dB +1 +2 -
dBm
Output amplitude Vomax Differential - - 300 mV p-p
Output resistance Rout 40 50 60 Ω
Optical return loss ORL λ=1.31/1.55 µm 27 35 -dB
*2: Output: Capacitive coupling
*3: Single-ended (Vout+) mesurement
InGaAs PIN photodiode with preamp
G9819-14
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believ ed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to an y of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
Cat. No. KIRD1096E02
Apr. 2007 DN
2
■ Photo sensitivity vs. average optical input power
KIRDB0349EA
■ Bit error rate
AVERAGE OPTICAL INPUT POWER (dBm)
PHOTO SENSITIVITY (V/mW)
-30 -20 -10 0
-25 -15 -5 5
10
10000
100
1000
(Typ. Ta=25 ˚C, Vout+, Vcc=Vpd=3.3 V, Duty ratio 50 %, Pulse width 5 ns, λ=1.31 µm)
KIRDB0355EA
AVERAGE OPTICAL INPUT POWER (dBm)
BIT ERROR RATE
(Typ. Ta=25 ˚C, Bit rate 1.25 Gbps, PN=23, Extinction ratio 9 dB, λ=1.31 µm)
-32 -22-23-24-25-26-27-28-29-30-31
10-12
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
10-11
■ Dimensional outline
(unit: mm, tolerance unless otherwise noted: ±0.1)
OPTICAL
REFERENCE
PLANE
Vpd (CATHODE)
Vout-
Vout+
Vcc
Vee (GND)
5
2.99 ± 0.01
6.2
-0.1
+0
3.9
0.63 ± 0.05
2.1
1.1 ± 0.035
(12.7)
(5 ×) 0.35 ± 0.05
4.05 ± 0.05
0.57 ± 0.05
5.8
5.8
(
5.4)
2.92 ± 0.05
6.9
-0.35
+0.3
12.05
-0.45
+0.35
2.54
60˚
KIRDC0074EA
LIGHT INPUT
COAXIAL
CABLE
TESTER
R
Vcc=3.3
Vee=GND
0.1 µF
0.1 µF
Vout+
Vout-
50 Ω
50 Ω
0.1 µF
AGC
Vpd
■ Operating circuit example
KIRDA0187EB
■ Eye diagram
Vout+
Vout-
10 mV/div., 200 ps/div., Ta=25 °C, Vcc=Vpd=3.3 V
Bit rate 1.25 Gbps, Pin= -25 dBm
