DSA 50 C 100 QB
Schottky Diode Gen ²
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
230
IA
V
F
0.90
R0.95 K/W
V
R
=
1 2 3
min.
25
t = 10 ms
Applications:
V
RRM
V
100
0.45
T
VJ
V°C=
T
VJ
°C=mA
5
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=155°C
d =
P
tot
160 WT
C
°C=
T
VJ
175 °C
-55
V
I
RRM
=
=100
25
25
T
VJ
=45°C
DSA 50 C 100 QB
V
A
100
V100
25
25
25
max. repe titiv e re verse vo l t a g e
reverse current
forward voltage
virt ua l j un ctio n temp e r ature
total power dissipation
max. forward surge current
Conditions Unit
1.07
T
VJ
°C=25
C
J
j
unction capacitance V= V;12 T
125
V
F0
V
0.45
T
VJ
=175°C
r
F
7.3 Ω
f = 1 MHz = °C25
m
V
0.72
T
VJ
=°C
I
F
=A
V
25
0.90
I
F
=A50
I
F
=A50
2x
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
(50 Hz), sine
V
F
=0.72
V
● Housing:
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
TO-3P
●
rIndustry standard outline
●rcompatible with TO-247
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
RVJ
mA
289 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions. 20101129a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
DSA 50 C 100 QB
I
RMS
A
per pin 50
R
thCH
K/W0.25
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g5
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N120
mount ing forc e with cl ip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DSA 50 C 100 QB 504033Tube 30
Product Mar
k
i
g
Date Code
Part No.
Logo
Order Code
IXYS
abcd
D
S
A
50
C
100
QB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-3P (3)
=
=
=
DSA50C100HB
DSA60C100PB
TO-247AD (3)
TO-220AB (3)
Similar Part Package
1)
1
)
Marking on Pr oduct
DSA50C100QB
100
100
Voltage class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
RMS
IXYS reserves the right to change limits, conditions and dimensions. 20101129a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
DSA 50 C 100 QB
Outlines TO-3P
IXYS reserves the right to change limits, conditions and dimensions. 20101129a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
DSA 50 C 100 QB
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
10
20
30
40
50
60
70
020406080100
0.0001
0.001
0.01
0.1
1
10
10 30 50 700 204060
0
10
20
30
40
50
60
70
0.0001 0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
0 50 100 150 200
0
10
20
30
40
50
60
70
80
0 20406080100
0
200
400
600
800
1000
DC
25°C
50°C
75°C
100°C
125°C
Single Pulse
T
VJ
=175°C
150°C
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
T
C
[°C] I
F(AV)
[A]
P
(AV)
[W]
t[s]
Note: All curves are per diode
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case
I
F(AV)
[A]
T
VJ
=
150°C
125°C
25°C
d= 0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
Z
thJC
[K/W]
T
VJ
=25°C
R
thi
[K/W]
0.026
0.172
0.227
0.435
0.09
t
i
[s]
0.0005
0.011
0.072
0.34
1.5
IXYS reserves the right to change limits, conditions and dimensions. 20101129a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved