For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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HMC451LC3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
v04.1208
General Description
Features
Functional Diagram
The HMC451LC3 is an efficient GaAs PHEMT
MMIC Medium Power Ampli er housed in a leadless
RoHS compliant SMT package. Operating between
5 and 20 GHz, the ampli er provides 19 dB of gain,
+21 dBm of saturated power and 21% PAE from a
single +5V supply. This 50 Ohm matched ampli er
does not require any external components and the
RF I/O’s are DC blocked, making it an ideal linear
gain block or driver for HMC SMT mixers. The
HMC451LC3 allows the use of surface mount
manufacturing techniques.
Gain: 19 dB
Saturated Power: +21 dBm @ 21% PAE
Output IP3: +30 dBm
Single Supply: +5V @ 114 mA
50 Ohm Matched Input/Output
RoHS Compliant 3 x 3 mm SMT package
Electrical Speci cations, TA = +25° C, Vdd1 = Vdd2 = +5V
Typical Applications
The HMC451LC3 is ideal for use as a medium power
ampli er for:
• Microwave Radio & VSAT
• Military & Space
• Test Equipment & Sensors
• Fiber Optics
• LO Driver for HMC Mixers
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 5 -15 15 - 18 18 - 20 GHz
Gain 16 19 15 18 14 17 dB
Gain Variation Over Temperature 0.015 0.025 0.015 0.025 0.015 0.025 dB/ °C
Input Return Loss 13 13 12 dB
Output Return Loss 12 8 8 dB
Output Power for 1 dB
Compression (P1dB) 16.5 19.5 16 19 16.5 19.5 dBm
Saturated Output Power (Psat) 21 20.5 21 dBm
Output Third Order Intercept (IP3) 32 29 29 dBm
Noise Figure 7 6.5 7 dB
Supply Current (Idd) 114 114 114 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
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Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
25
3 5 7 9 11 13 15 17 19 21 23 25
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
4 6 8 10121416182022
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4 6 8 10121416182022
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4 6 8 10121416182022
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
4 6 8 10121416182022
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
4 6 8 10121416182022
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
HMC451LC3
v04.1208
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 128
Power Compression @ 10 GHz
Output IP3 vs. Temperature Noise Figure vs. Temperature
Gain, P1dB & PSAT
vs. Supply Voltage @ 11 GHz Reverse Isolation vs. Temperature
Power Compression @ 20 GHz
0
4
8
12
16
20
24
-18-16-14-12-10-8-6-4-20246
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
24
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
16
20
24
28
32
36
40
4 6 8 10121416182022
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
4 6 8 10121416182022
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
4 6 8 10121416182022
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
HMC451LC3
v04.1208
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
16
17
18
19
20
21
22
4.5 5 5.5
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat (dBm)
Vdd (Volts)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
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Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1 = Vdd2) +5.5 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm
Channel Temperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 12.4 mW/°C above 85 °C) 1.1 W
Thermal Resistance
(channel to ground paddle) 80 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vdd1 = Vdd2 (V) Idd1 = Idd2 (mA)
+4.5 111
+5.0 114
+5.5 116
Note: Ampli er will operate over full voltage range shown above
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50
MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Typical Supply Current vs. Vdd1 = Vdd2
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC451LC3
v04.1208
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 130
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 2, 4 - 9, 11,
12, 14, 15 N/C This pin may be connected to RF/DC ground.
Performance will not be affected.
3RFIN This pin is AC coupled and matched
to 50 Ohms from 5 - 20 GHz.
10 RFOUT This pin is AC coupled and matched
to 50 Ohms from 5 - 20 GHz.
13 Vdd2 Power Supply Voltage for the ampli er. External bypass
capacitors of 100 pF, 1,000 pF and 2.2 μF are required.
16 Vdd1 Power Supply Voltage for the ampli er. External bypass
capacitors of 100 pF, 1,000 pF and 2.2 μF are required.
GND Package bottom must be connected to RF/DC ground.
Component Value
C1, C2 100 pF
C3, C4 1,000 pF
C5, C6 2.2 μF
Application Circuit
HMC451LC3
v04.1208
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Evaluation PCB
The circuit board used in the nal application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 111667 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J5 DC Pin
C1, C2 100 pF Capacitor, 0402 Pkg.
C3, C4 1000 pF Capacitor, 0603 Pkg.
C5, C6 2.2 μF Capacitor, Tantalum
U1 HMC451LC3 Ampli er
PCB [2] 111665 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC451LC3
v04.1208
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
