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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MMBFJ201 / MMBFJ202 N-Channel General-Purpose Amplifier Description G This device is designed primarily for low level audio and general-purpose applications with high impedance signal sources. Sourced from process 52. S SOT-23 D Note: Source & Drain are interchangeable Ordering Information Part Number Top Mark Package Packing Method MMBFJ201 62P SOT-23 3L Tape and Reel MMBFJ202 62Q SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit V VDG Drain-Gate Voltage 40 VGS Gate-Source Voltage -40 V IGF Forward Gate Current 50 mA -55 to 150 C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com MMBFJ201 / MMBFJ202 -- N-Channel General-Purpose Amplifier January 2015 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Max. Unit Total Device Dissipation 350 mW Derate Above 25C 2.8 mW/C Thermal Resistance, Junction-to-Ambient 357 C/W Note: 3. Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead minimum 6cm2. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 A, VDS = 0 IGSS VGS(off) Gate Reverse Current VGS = -20 V, VDS = 0 Gate-Source Cut-Off Voltage VDS = 20 V, ID = 10 nA -40 V -100 MMBFJ201 -0.3 -1.5 MMBFJ202 -0.8 -4.0 MMBFJ201 0.2 1.0 MMBFJ202 0.9 4.5 MMBFJ201 500 MMBFJ202 1000 pA V On Characteristics IDSS Zero-Gate Voltage Drain Current(4) VDS = 20 V, IGS = 0 mA Small Signal Characteristics yFS Forward Transfer Admittance VDS = 20 V, f = 1.0 kHz mhos Note: 4. Pulse test: pulse width 300 s, duty cycle 2.0% (c) 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 2 MMBFJ201 / MMBFJ202 -- N-Channel General-Purpose Amplifier Thermal Characteristics(3) Figure 1. Parameter Interactions Figure 2. Common Drain-Source Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics Figure 5. Leakage Current vs. Voltage Figure 6. Noise Voltage vs. Frequency (c) 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 3 MMBFJ201 / MMBFJ202 -- N-Channel General-Purpose Amplifier Typical Performance Characteristics Figure 8. Output Conductance vs. Drain Current Figure 7. Transconductance vs. Drain Current Figure 9. Capacitance vs. Voltage (c) 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 4 MMBFJ201 / MMBFJ202 -- N-Channel General-Purpose Amplifier Typical Performance Characteristics (Continued) os) Figure 10. Input Admittance Figure 11. Forward Transadmittance Figure 12. Output Admittance Figure 13. Reverse Transadmittance (c) 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 5 MMBFJ201 / MMBFJ202 -- N-Channel General-Purpose Amplifier Common Source Characteristics Figure 14. Input Admittance Figure 15. Forward Transadmittance Figure 16. Output Admittance Figure 17. Reverse Transadmittance (c) 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 6 MMBFJ201 / MMBFJ202 -- N-Channel General-Purpose Amplifier Common Gate Characteristics MMBFJ201 / MMBFJ202 -- N-Channel General-Purpose Amplifier Physical Dimensions 0.95 2.920.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.400.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (c) 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* (R) TinyBoost TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM TM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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