DMN3731UFB4
Document number: DS40981 Rev. 2 - 2
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January 2019
© Diodes Incorporated
DMN3731UFB4
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON)
ID
TA = +25°C
30V
460m @ VGS= 4.5V
1.2A
560m @ VGS= 2.5V
1.0A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Portable Applications
Power Management Functions
Features and Benefits
0.4mm Ultra Low Profile Package for Thin Application
0.6mm2 Package Footprint, 10 times Smaller than SOT23
Low VGS(TH), Can Be Driven Directly From A Battery
Low RDS(ON)
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (Approximate)
Ordering Information (Note 4)
Part Number
Marking
Reel Size (inches)
Tape Width (mm)
Tape Pitch (mm)
Quantity Per Reel
DMN3731UFB4-7B
BR
7
8
2
10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
DMN3731UFB4-7B
X2-DFN1006-3
Equivalent Circuit
Top View
Bottom View
DS
G
e4
BR = Part Marking Code
BR
BR
BR
Top View
Bar Denotes Gate and Source Side
BR
D
S
G
Gate Protection
Diode
ESD PROTECTED
DMN3731UFB4
Document number: DS40981 Rev. 2 - 2
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January 2019
© Diodes Incorporated
DMN3731UFB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±8
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
1.2
0.9
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
1.2
A
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
IDM
3
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
0.52
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RJA
240
°C/W
Total Power Dissipation (Note 6)
PD
0.97
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RJA
129
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
30
—
—
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current
IDSS
—
—
1
µA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
3
µA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
0.45
—
0.95
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
297
460
mΩ
VGS = 4.5V, ID = 200mA
—
311
560
VGS = 2.5V, ID = 100mA
—
335
730
VGS = 1.8V, ID = 75mA
Diode Forward Voltage
VSD
—
1.0
1.2
V
VGS = 0V, IS = 300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
73
—
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
7.2
—
pF
Reverse Transfer Capacitance
Crss
—
5
—
pF
Gate Resistance
Rg
—
902
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
5.5
—
nC
VGS = 4.5V, VDS = 15V,
ID = 1A
Gate-Source Charge
Qgs
—
0.8
—
nC
Gate-Drain Charge
Qgd
—
1.4
—
nC
Turn-On Delay Time
tD(ON)
—
2.5
—
ns
VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
Turn-On Rise Time
tR
—
3.1
—
ns
Turn-Off Delay Time
tD(OFF)
—
477
—
ns
Turn-Off Fall Time
tF
—
123
—
ns
Reverse Recovery Time
tRR
—
59
—
ns
IF = 1A, di/dt = 100A/μs
Reverse Recovery Charge
QRR
—
25
—
nC
IF = 1A, di/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN3731UFB4
Document number: DS40981 Rev. 2 - 2
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DMN3731UFB4
0.0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS = 1.0V
VGS = 1.2V
VGS = 1.3V
VGS = 1.4V
VGS = 1.8V
VGS = 2.0V
VGS = 2.5V
VGS = 3.0V
VGS = 4.5V
0
0.2
0.4
0.6
0.8
1
0 0.5 1 1.5 2
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS = 5V
TJ = -55℃
TJ = 25℃
TJ = 85℃
TJ = 125℃
TJ = 150℃
0.2
0.25
0.3
0.35
0 0.2 0.4 0.6 0.8 1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
VGS = 4.5V
VGS = 2.5V
VGS = 1.8V
0
0.4
0.8
1.2
1.6
2
0 2 4 6 8
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID = 200mA
ID = 75mA
ID = 100mA
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.2 0.4 0.6 0.8 1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
VGS = 4.5V
TJ = -55℃
TJ = 25℃
TJ = 85℃
TJ = 125℃
TJ = 150℃
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 0 25 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
VGS = 4.5V, ID = 200mA
VGS = 2.5V, ID = 100mA
VGS = 1.8V, ID = 75mA
DMN3731UFB4
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DMN3731UFB4
0
0.1
0.2
0.3
0.4
0.5
0.6
-50 -25 0 25 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
VGS = 1.8V, ID = 75mA
VGS = 2.5V, ID = 100mA
VGS = 4.5V, ID = 200mA
0
0.3
0.6
0.9
1.2
1.5
-50 -25 0 25 50 75 100 125 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
ID = 1mA
ID = 250μA
0
0.2
0.4
0.6
0.8
1
0 0.3 0.6 0.9 1.2
IS, SOURCE CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VGS = 0V
TJ = -55oC
TJ = 25oC
TJ = 85oC
TJ = 125oC
TJ = 150oC
1
10
100
1000
0 5 10 15 20 25 30
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
Ciss
Coss
Crss
0
2
4
6
8
0 2 4 6 8 10 12
VGS (V)
Qg (nC)
Figure 11. Gate Charge
VDS = 15V, ID = 1A
0.01
0.1
1
10
0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
TJ(Max) = 150℃
TC = 25℃
Single Pulse
DUT on 1*MRP
Board
VGS = 4.5V
RDS(ON)
Limited
DC
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
DMN3731UFB4
Document number: DS40981 Rev. 2 - 2
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DMN3731UFB4
0.001
0.01
0.1
1
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
RθJA(t) = r(t) * RθJA
RθJA = 231℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
D=0.3
D=0.5
D=0.7
D=0.9
DMN3731UFB4
Document number: DS40981 Rev. 2 - 2
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DMN3731UFB4
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2-DFN1006-3
X2-DFN1006-3
Dim
Min
Max
Typ
A
0.40
A1
0.00
0.05
0.03
b
0.10
0.20
0.15
b2
0.45
0.55
0.50
D
0.95
1.05
1.00
E
0.55
0.65
0.60
e
-
-
0.35
L1
0.20
0.30
0.25
L2
0.20
0.30
0.25
L3
-
-
0.40
z
0.02
0.08
0.05
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2-DFN1006-3
Dimensions
Value (in mm)
C
0.70
G1
0.30
G2
0.20
X
0.40
X1
1.10
Y
0.25
Y1
0.70
L3 L1L2
e
b
D
E
A
z
b2
A1
Seating Plane
Pin #1 ID
C
Y1
X1
X
G2
Y
G1
Y
C
G1
G2
X
X
1
Z
Y
C
G1
G2
X
X
1
Z
Y
C
G1
G2
X
X
1
Z
Y
C
G1
G2
X
X
1
Z
DMN3731UFB4
Document number: DS40981 Rev. 2 - 2
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DMN3731UFB4
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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