November 2005 / D
Page 1
SEMICONDUCTOR
TAK CHEONG
®
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Ma ximum Ra ti ng s TA = 25°C unless otherwise noted
Parameter Value Units
Power Dissipation 500 mW
Storage Temperature Range -65 to +200 °C
Operating Junction Temperature +200 °C
Lead Temperature (1/16” from case for 10 seconds) +230 °C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.4 to 56 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
Electrical Characteristics TA = 25°C unless otherwise noted
Device Type VZ @ IZT
(Volts)
Nominal
IZT
(mA)
ZZT @ IZT
(Ω)
Max
ZZK @ IZK = 0.25mA
(Ω)
Max
IR @ VR
(µA)
Max
VR
(Volts)
TC1N5221B 2.4 20 30 1200 100 1
TC1N5222B 2.5 20 30 1250 100 1
TC1N5223B 2.7 20 30 1300 75 1
TC1N5224B 2.8 20 30 1400 75 1
TC1N5225B 3 20 29 1600 50 1
TC1N5226B 3.3 20 28 1600 25 1
TC1N5227B 3.6 20 24 1700 15 1
TC1N5228B 3.9 20 23 1900 10 1
TC1N5229B 4.3 20 22 2000 5 1
TC1N5230B 4.7 20 19 1900 5 2
TC1N5231B 5.1 20 17 1600 5 2
TC1N5232B 5.6 20 11 1600 5 3
TC1N5233B 6 20 7 1600 5 3.5
TC1N5234B 6.2 20 7 1000 5 4
TC1N5235B 6.8 20 5 750 3 5
TC1N5236B 7.5 20 6 500 3 6
TC1N5237B 8.2 20 8 500 3 6.5
TC1N5238B 8.7 20 8 600 3 6.5
TC1N5239B 9.1 20 10 600 3 7
TC1N5240B 10 20 17 600 3 8
TC1N5241B 11 20 22 600 2 8.4
TC1N5242B 12 20 30 600 1 9.1
TC1N5243B 13 9.5 13 600 0.5 9.9
TC1N5244B 14 9 15 600 0.1 10
Cathode Anode
ELECTRICAL SYMBOL
TC1N5221B through TC1N5263B Series
L
52
xx
T
DEVICE MARKING DIAGRAM
L : Logo
Device Code : TC1N52xxT
VZ Tolerance (T) : B = ±5%
: C = ±2%
:
AXIAL LEAD
DO35