1C3D02065E Rev. A, 10-2016
C3D02065E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
• 650-VoltSchottkyRectier
• OptimizedforPFCBoostDiodeApplication
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies(SMPS)
• BoostdiodesinPFCorDC/DCstages
• FreeWheelingDiodesinInverterstages
• AC/DCconverters
Package
TO-252-2 
Part Number Package Marking
C3D02065E TO-252-2 C3D02065
VRRM = 650 V
IF (TC=135˚C) = 4 A
Qc = 5.8 nC
PIN1
PIN2 CASE
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 650 V
VRSM SurgePeakReverseVoltage 650 V
VDC DCBlockingVoltage 650 V
IFContinuousForwardCurrent
8
4
2
A
TC=25˚C
TC=135˚C
TC=161˚C
Fig.3
IFRM RepetitivePeakForwardSurgeCurrent 11
7.5 ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IFSM Non-RepetitivePeakForwardSurgeCurrent 16.5
15 ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse Fig.8
IFSM Non-RepetitivePeakForwardSurgeCurrent 120
110 ATC=25˚C,tP=10ms,Pulse
TC=110˚C,tP=10ms,Pulse Fig.8
Ptot PowerDissipation 39.5
17 WTC=25˚C
TC=110˚C Fig.4
dV/dt DiodedV/dtruggedness 200 V/ns VR=0-650V
∫i2dt i2tvalue 1.35
1.12 A2sTC=25˚C,tP=10ms
TC=110˚C,tP=10ms
TJ,Tstg OperatingJunctionandStorageTemperature -55to
+175 ˚C
2C3D02065E Rev. A, 10-2016
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.5
1.8
1.7
2.4 VIF=2ATJ=25°C
IF=2ATJ=175°C Fig.1
IRReverseCurrent 3.5
7.5
18
60 μAVR=650VTJ=25°C
VR=650VTJ=175°C Fig.2
QCTotalCapacitiveCharge 5.8 nC
VR=400V,IF=2A
di/dt=500A/μS
TJ=25°C
Fig.5
C TotalCapacitance
175
10.5
8.5
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Fig.6
ECCapacitanceStoredEnergy 0.8 μJ VR=400V Fig.7
Note:Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC TO-252PackageThermalResistancefromJunctiontoCase 3.8 °C/W
Typical Performance
Figure1.ForwardCharacteristics
2
3
4
5
6
Foward Current, I
F
(A)
T
J
= -55 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= 175 °C
T
J
= 125 °C
0
1
2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Foward Current, I
Foward Voltage, V
F
(V)
IF (A)
VF (V)
40
60
80
100
Reverse Leakage Current, I
RR
(uA)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
T
= 25
°
0
20
0 200 400 600 800 1000 1200
Reverse Leakage Current, I
Reverse Voltage, V
R
(V)
T
J
= -55 °C
T
J
= 25
°
Figure2.ReverseCharacteristics
VR (V)
IR (mA)
3C3D02065E Rev. A, 10-2016
10
15
20
25
30
I
F(A)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
5
10
25 50 75 100 125 150 175
T
C
(°C)
Figure3.CurrentDerating Figure4.PowerDerating
15
20
25
30
35
40
45
PTOT
(W)
0
5
10
15
25 50 75 100 125 150 175
T
C
(°C)
Figure5.TotalCapacitanceChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
Typical Performance
3
4
5
6
7
8
9
Capacitive Charge, Q
C(nC)
Conditions:
T
J
= 25 °C
0
1
2
3
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, VR(V)
80
100
120
140
160
180
200
Capacitance (pF)
Conditions:
T
J
= 25 °C
F
test
= 1 MHz
V
test
= 25 mV
0
20
40
60
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, VR(V)
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
4C3D02065E Rev. A, 10-2016
Typical Performance
Figure9.TransientThermalImpedance
100E
-
3
1
0.5
0.3
0.1
0.05
0.02
SinglePulse
10E-3
100E
-
3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
0.01
Thermal Resistance (˚C/W)
T (Sec)
Figure7.CapacitanceStoredEnergy
0.8
1
1.2
1.4
1.6
1.8
2
Capacitance Stored Energy, E
C
(µJ)
0
0.2
0.4
0.6
0 100 200 300 400 500 600 700
Capacitance Stored Energy, E
Reverse Voltage, VR(V)
VR (V)
EC(mJ)
100
1,000
TJ_initial = 25 °C
TJ_initial = 110 °C
10
10E-6 100E-6 1E-3 10E-3
1000
100
10
Figure8.Non-RepetitivePeakForwardSurgeCurrent
versusPulseDuration(sinusoidalwaveform)
tp (s)
1E-051E-041E-031E-02
IFSM (A)
5C3D02065E Rev. A, 10-2016
Recommended Solder Pad Layout
Part Number Package Marking
C3D02065E TO-252-2 C3D02065
TO-252-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
SYMBOL
MILLIMETERS
MIN
MAX
A
2.159
2.413
A1
0
0.13
b
0.64
0.89
b2
0.653
1.143
b3
5.004
5.6
c
0.457
0.61
c2
0.457
0.864
D
5.867
6.248
D1
5.21
-
E
6.35
7.341
E1
4.32
-
e
4.58 BSC
H
9.65
10.414
L
1.106
1.78
L2
0.51 BSC
L3
0.889
1.27
L4
0.64
1.01
θ
0°
8°
Tjb June 2015
MX+DI+PSI
Tjb June 2015
MX+DI+PSI
Package Dimensions
PackageTO-252-2
66 C3D02065E Rev. A, 10-2016
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
RelatedLinks
Diode Model
VT
RT
Diode Model CSD10060
Vf T = VT + If*RT
VT= 0.92 + (Tj * -1.35*10-3)
RT= 0.052 + (Tj * 0.29*10-3)
Note:Tj=DiodeJunctionTemperatureInDegreesCelsius,
validfrom25°Cto175°C
VfT=VT+If*RT
VT=0.98+(TJ*-1.1*10-3)
RT=0.18+(TJ*1.8*10-3)