MRF9080LR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement - Mode Lateral MOSFET
Designed for GSM 900 MHz frequency band, the high gain and broadband
performance of this device make it ideal for large-signal, common-source
amplifier applications in 26 volt base station equipment.
Typical Performance for GSM Frequencies, 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +65 Vdc
Gate-Source Voltage VGS - 0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD250
1.43
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 0.7 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M1 (Minimum)
Document Number: MRF9080
Rev. 8, 10/2008
Freescale Semiconductor
Technical Data
MRF9080LR3
920-960 MHz, 75 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465- 06, STYLE 1
NI-780
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RF Device Data
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MRF9080LR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vds, VGS = 0)
IDSS 1 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 )
IGSS 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th) 2.0 4.0 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
VGS(Q) 3.7 Vdc
Drain- Source On- Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on) 0.19 0.4 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs 8.0 S
Dynamic Characteristics (1)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss 73 pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss 2.9 pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)
P1dB 68 75 W
Common-Source Amplifier Power Gain @ 70 W (Min)
(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)
Gps 17 18.5 20 dB
Drain Efficiency @ Pout = 70 W
(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)
η1 47 52 %
Drain Efficiency @ P1dB
(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)
η2 55 %
Input Return Loss
(VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 960 MHz)
IRL 9.5 12.5 dB
1. Part is internally input matched.
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RF Device Data
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Figure 1. Broadband GSM 900 Test Circuit Schematic
VGG VDD
C6
+
RF
INPUT
R1 C5
R2
R3
C4
+
C3
C9
C2
C1
C8
C7
DUT
C11 C12
RF
OUTPUT
C15
C10
C13
C14
C16
C17
C18
Table 5. Broadband GSM 900 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 4.7 pF Chip Capacitor ATC100B4R7BT500XT ATC
C2 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC
C3 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC
C4, C5, C9, C10, C12, C13 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC
C6, C16, C17 22 pF Chip Capacitors ATC100B220GT500XT ATC
C7, C18 10 µF, 35 V Tantalum Chip Capacitors T491D106M035AT Kemet
C8, C11 10 pF Chip Capacitors ATC100B100JT500XT ATC
C14 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
C15 8.2 pF Chip Capacitor ATC100B8R2GT500XT ATC
R1, R2, R3 1.0 k, 1/8 W Chip Resistors CRCW08051001FKEA Vishay
Raw PCB Material 30 mil Glass Teflon, εr = 2.55 TLX8-0300 Taconic
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RF Device Data
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MRF9080LR3
Figure 2. Broadband GSM 900 Test Circuit Component Layout
MRF9080
C3
VGG
RF OUTPUTRF INPUT
VDD
C1
C2
C4
C5
C6
C7
C8C9 C10
C11 C12 C13
C14
C15
C16
C17
C18
R1
R2
R3
WB1 WB2
CUT OUT AREA
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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RF Device Data
Freescale Semiconductor
Figure 3. Broadband GSM 900 Optimized Demo Board Schematic
VGG
VDD
C6
+
RF
INPUT
U1 R1
C5
R2
P1
R3
R4 T1 C4
+
C3
C9
+
C2
C1
C8
C7
DUT
R5
R6
C11 C12
RF
OUTPUT
C15
C10 C13
C14
Table 6. Broadband GSM 900 Optimized Demo Board Component Designations and Values
Part Description Part Number Manufacturer
C1 4.7 pF Chip Capacitor, ACCU -P 08051J4R7CBS AVX
C2 3.9 pF Chip Capacitor, ACCU -P 08051J3R9CBS AVX
C3, C15 22 pF Chip Capacitors, ACCU- P 08051J221CBS AVX
C4, C6 22 mF, 35 V Tantalum Chip Capacitors T491X226K035AS Kemet
C5 1 mF Chip Capacitor, ACCU- P 08053105 AVX
C7, C8 5.6 pF Chip Capacitors, ACCU- P 08051J5R6CBS AVX
C9 220 mF, 63 V Electrolytic Capacitor 2222- 136- 68221 Vishay
C10, C11 3.3 pF Chip Capacitors, ACCU- P 08051J3R3CBS AVX
C12, C13 2.2 pF Chip Capacitors, ACCU-P 08051J2R2CBS AVX
C14 4.7 pF Chip Capacitor ATC100B4R7JT500XT ATC
P1 5.0 k Potentiometer CMS Cermet Multi- turn 3224W Bourns
R1 10 , 1/8 W Chip Resistor CRCW080510R0FKEA Vishay
R2, R5, R6 1 k, 1/8 W Chip Resistor CRCW08051001FKEA Vishay
R3 1.2 k, 1/8 W Chip Resistor CRCW08051201FKEA Vishay
R4 2.2 k, 1/8 W Chip Resistor CRCW08052201FKEA Vishay
T1 Bipolar NPN Transistor, SOT- 23 BC847ALT1G ON Semiconductor
U1 Voltage Regulator, Micro-8 LP2951ACDMR2G ON Semiconductor
Substrate = Taconic RF35, Thickness 0.5 mm
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RF Device Data
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MRF9080LR3
Figure 4. Broadband GSM 900 Optimized Demo Board Component Layout
MRF9080
C5 R1 U1
P1
R3
T1
R4
R2
C4
C3
C2
C1
R6
R5 C7
C6 C9
C8
C11 C12
C10 C13
C14
C15
VBIAS Ground VSUPPLY
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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RF Device Data
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TYPICAL CHARACTERISTICS
(IN FREESCALE BROADBAND GSM 900 OPTIMIZED DEMO BOARD)
0
5
10
15
20
25
30
35
Pin, INPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
f, FREQUENCY (MHz)
Figure 6. Power Gain versus Output Power
Figure 7. Power Gain and Input Return Loss
versus Frequency
Pin, INPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 8. Output Power and Efficiency versus
Input Power
Figure 9. Power Gain versus Output Power
Gps, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)h
Pout
h
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
Pout , OUTPUT POWER (WATTS)
850 870 1010
Pout = 20 W
15
16
17
18
19
20
21
0.20 1 1.2
16
18
19
20
1 10 100
17
Pout, OUTPUT POWER (WATTS)
Gps, POWER GAIN (dB)
1 10 100
17
18
19
20
21
Pout, OUTPUT POWER (WATTS)
Gps, POWER GAIN (dB)
1 10 100
17
18
19
20
Figure 10. Output Power and Efficiency versus Input
Power
Gps, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)h
Pout , OUTPUT POWER (WATTS)
800 mA
IDQ = 1000 mA
VDD = 26 Vdc
f = 940 MHz
T = 25°C
600 mA
400 mA
IDQ = 600 mA
f = 940 MHz
T = 25°C
VDD = 22 Vdc
30 Vdc
26 Vdc
VDD = 26 Vdc
IDQ = 600 mA
T = 25°C
Gps
IRL
70 W
Pout = 20 W
70 W
890 910 930 950 970 990 1030 1050
−30
−25
−20
−15
−10
−5
0
0
10
20
30
40
50
60
IRL, INPUT RETURN LOSS (dB)
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
T = 25°C
120
110
100
90
80
70
60
50
40
30
20
10
01.4 1.6 1.80.4 0.6 0.8
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
25°C
50°C
85°C
110
100
90
80
70
60
50
40
30
20
10
00.20 1 1.2 1.4 1.6 1.80.4 0.6 0.8
h
Pout
25°C
85°C
25°C85°C
40
45
50
55
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RF Device Data
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MRF9080LR3
Figure 11. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Zload
880
920
960
0.91 - j2.11
1.6 - j2.61
0.88 - j2.65
1.22 - j0.12
1.00 - j0.16
1.22 - j0.22
VDD = 26 V, IDQ = 600 mA, Pout = 90 W CW
1000 2.45 - j3.38 1.14 - j0.41
f = 1000 MHz Zo = 10
f = 880 MHz
f = 880 MHz
f = 1000 MHz
Zsource
Zload
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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RF Device Data
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PACKAGE DIMENSIONS
MRF9080LR3
NI-780
CASE 465- 06
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.772 0.788 19.60 20.00
Q.118 .138 3.00 3.51
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S0.365 0.375 9.27 9.52
M0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
10
RF Device Data
Freescale Semiconductor
MRF9080LR3
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
8Oct. 2008 Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
Updated Part Numbers in Tables 5 and 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3, 5
Added Product Documentation and Revision History, p. 10
MRF9080LR3
11
RF Device Data
Freescale Semiconductor
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Document Number: MRF9080
Rev. 8, 10/2008