© 2002 IXYS CORPORATION, All Rights Reserved DS98884(01/02)
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
Features
zRF capable MOSFETs
zDouble metal process for low gate
resistance
zRugged polysilicon gate cell structure
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
zFast intrinsic rectifier
Applications
zDC-DC converters
zSwitched-mode and resonant-mode
power supplies, >500kHz switching
zDC choppers
z13.5 MHz industrial applications
zPulse generation
zLaser drivers
z RF amplifiers
Advantages
zSpace savings
zHigh power density
VDSS = 500V
ID25 = 21A
RDS(on) ≤≤
≤≤
≤ 250mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low
Intrinsic Rg, High dV/dt, Low trr
IXFH21N50F
IXFT21N50F
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C21A
IDM TC= 25°C, Pulse Width Limited by TJM 84 A
IAR TC= 25°C21A
EAS TC= 25°C 1.5 J
dV/dt IS≤ IDM, di/dt < 100A/μs, VDD ≤ VDSS 10 V/ns
TJ ≤ 150°C, RG = 2Ω
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 500 V
VGS(th) VDS = VGS, ID = 4mA 3.0 5.5 V
IGSS VGS = ± 20V, VDS = 0V ± 100 nA
IDSS VDS = VDSS 50 μA
VGS = 0V TJ = 125°C 1.5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 250 mΩ
G = Gate D = Drain
S = Source TAB = Drain
TO-268 (IXFT)
GS
TO-247 (IXFH)
TAB
TAB
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH21N50F
IXFT21N50F
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 12 17 S
Ciss 2600 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 470 pF
Crss 160 pF
td(on) 16 ns
tr 12 ns
td(off) 36 ns
tf 7.7 ns
Qg(on) 77 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 21 nC
Qgd 40 nC
RthJC 0.42 °C/W
RthCS (TO-247) 0.21 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 21 A
ISM Repetitive, Pulse Width Limited by TJM 84 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 1.2 μC
IRM 10 A
IF = 21A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXFH) Outline
TO-268 Outline
Min Recommended Footprint
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
