February 2009 Rev 5 1/84
1
STR750Fxx STR751Fxx
STR752Fxx STR755Fxx
ARM7TDMI-S™ 32-bit MCU with Flash, SMI, 3 std 16-bit timers,
PWM timer, fast 10-bit ADC, I2C, UART, SSP, USB and CAN
Features
Core
ARM7TDMI-S 32-bit RISC CPU
54 DMIPS @ 60 MHz
Memories
Up to 256 KB Flash program memory (10k
W/E cycles, retention 20 yrs @ 85°C)
16 KB Read-While-Write Flash for data
(100k W/E cycles, retention 20 yrs@ 85°C)
Flash Data Readout and Write Protection
16KBytes embedded high speed SRAM
Memory mapped interface (SMI) to ext.
Serial Flash (64 MB) w. boot capability
Clock, reset and supply management
Single supply 3.3V ±10% or 5V ±10%
Embedded 1.8V Voltage Regulators
Int. RC for fast start-up and backup clock
Up to 60 MHz operation using internal PLL
with 4 or 8 MHz crystal/ceramic osc.
Smart Low Power Modes: SLOW, WFI,
STOP and STANDBY with backup registers
Real-time Clock, driven by low power
internal RC or 32.768 kHz dedicated osc,
for clock-calendar and Auto Wake-up
Nested interrupt controller
Fast interrupt handling with 32 vectors
16 IRQ priorities, 2 maskable FIQ sources
16 external interrupt / wake-up lines
DMA
4-channel DMA controller
Circular buffer management
Support for UART, SSP, Timers, ADC
6 Timers
16-bit watchdog timer (WDG)
16-bit timer for system timebase functions
3 synchronizable timers each with up to 2
input captures and 2 output
compare/PWMs.
16-bit 6-ch. synchronizable PWM timer
Dead time generation, edge/center-aligned
waveforms and emergency stop
Ideal for induction/brushless DC motors
8 Communications interfaces
–1 I
2C interface
3 HiSpeed UARTs w. Modem/LIN capability
2 SSP interfaces (SPI or SSI) up to 16 Mb/s
1 CAN interface (2.0B Active)
1 USB full-speed 12 Mb/s interface with 8
configurable endpoint sizes
10-bit A/D converter
16/11 chan. with prog. Scan Mode & FIFO
Programmable Analog Watchdog feature
Conversion time: min. 3.75 µs
Start conversion can be triggered by timers
Up to 72/38 I/O ports
72/38 GPIOs with High Sink capabilities
Atomic bit SET and RES operations
Table 1. Device summary
Reference Part number
STR750Fxx STR750FV0, STR750FV1, STR750FV2
STR751Fxx STR751FR0, STR751FR1, STR751FR2
STR752Fxx STR752FR0, STR752FR1, STR752FR2
STR755Fxx STR755FR0, STR755FR1, STR755FR2
STR755FV0, STR755FV1, STR755FV2
LQFP64 10x10 mm LQFP100 14 x 14 mm
LFBGA64
8 x 8 x 1.7 mm
LFBGA100
10 x 10 x 1.7 mm
www.st.com
Contents STR750Fxx STR751Fxx STR752Fxx STR755Fxx
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Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 Device overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1 Pin description table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2 External components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5 Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6 Electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6.1.6 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6.1.7 I/O characteristics versus the various power schemes (3.3V or 5.0V) . 29
6.1.8 Current consumption measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
6.2.1 Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
6.2.2 Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
6.2.3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6.3.2 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 35
6.3.3 Embedded voltage regulators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
6.3.4 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
6.3.5 Clock and timing characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Contents
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6.3.6 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
6.3.7 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
6.3.8 I/O port pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
6.3.9 TB and TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
6.3.10 Communication interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . 62
6.3.11 USB characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
6.3.12 10-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
7 Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
7.1 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
7.2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
7.2.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
7.2.2 Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . . . 80
8 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Description STR750Fxx STR751Fxx STR752Fxx STR755Fxx
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1 Description
The STR750 family of 32-bit microcontrollers combines the industry-standard ARM7TDMI®
32-bit RISC core, featuring high performance, very low power, and very dense code, with a
comprehensive set of peripherals and ST's latest 0.18µ embedded Flash technology. The
STR750 family comprises a range of devices integrating a common set of peripherals as
well as USB, CAN and some key innovations like clock failure detection and an advanced
motor control timer. It supports both 3.3V and 5V, and it is also available in an extended
temperature range (-40 to +105°C). This makes it a genuine general purpose
microcontroller family, suitable for a wide range of applications:
Appliances, brushless motor drives
USB peripherals, UPS, alarm systems
Programmable logic controllers, circuit breakers, inverters
Medical and portable equipment
2 Device overview
Table 2. Device overview
Features
STR755FR0
STR755FR1
STR755FR2
STR751FR0/
STR751FR1/
STR751FR2
STR752FR0/
STR752FR1/
STR752FR2
STR755FV0
STR755FV1/
STR755FV2
STR750FV0/
STR750FV1/
STR750FV2
Flash - Bank 0 (bytes) 64K/128K/256K
Flash - Bank 1 (bytes) 16K RWW
RAM (bytes) 16K
Operating
Temperature.
Ambient temp.:-40 to +85°C / -40 to +105°C (see Ta bl e 4 9 )
Junction temp. -40 to + 125 °C (see Ta b l e 1 0 )
Common Peripherals 3 UARTs, 2 SSPs, 1 I2C, 3 timers 1 PWM timer,
38 I/Os 13 Wake-up lines, 11 A/D Channels
3 UARTs, 2 SSPs, 1 I2C,
3 timers 1 PWM timer, 72
I/Os 15 Wake-up lines, 16 A/D Channels
USB/CAN peripherals None USB CAN None USB+CAN
Operating Voltage 3.3V or 5V 3.3V 3.3V or 5V
Packages (x)T=LQFP64 10x10, H=LFBGA64 T=LQFP100 14x14, H=LFBGA100
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Introduction
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3 Introduction
This Datasheet contains the description of the STR750F family features, pinout, Electrical
Characteristics, Mechanical Data and Ordering information.
For complete information on the Microcontroller memory, registers and peripherals. Please
refer to the STR750F Reference Manual.
For information on the ARM7TDMI-S core please refer to the ARM7TDMI-S Technical
Reference Manual available from Arm Ltd.
For information on programming, erasing and protection of the internal Flash memory
please refer to the STR7 Flash Programming Reference Manual
For information on third-party development tools, please refer to the http://www.st.com/mcu
website.
3.1 Functional description
The STR750F family includes devices in 2 package sizes: 64-pin and 100-pin. Both types
have the following common features:
ARM7TDMI-STM core with embedded Flash & RAM
STR750F family has an embedded ARM core and is therefore compatible with all ARM tools
and software. It combines the high performance ARM7TDMI-STM CPU with an extensive
range of peripheral functions and enhanced I/O capabilities. All devices have on-chip high-
speed single voltage FLASH memory and high-speed RAM.
Figure 1 shows the general block diagram of the device family.
Embedded Flash memory
Up to 256 KBytes of embedded Flash is available in Bank 0 for storing programs and data.
An additional Bank 1 provides 16 Kbytes of RWW (Read While Write) memory allowing it to
be erased/programmed on-the-fly. This partitioning feature is ideal for storing application
parameters.
When configured in burst mode, access to Flash memory is performed at CPU clock
speed with 0 wait states for sequential accesses and 1 wait state for random access
(maximum 60 MHz).
When not configured in burst mode, access to Flash memory is performed at CPU
clock speed with 0 wait states (maximum 32 MHz)
Embedded SRAM
16 Kbytes of embedded SRAM accessed (read/write) at CPU clock speed with 0 wait states.
Enhanced interrupt controller (EIC)
In addition to the standard ARM interrupt controller, the STR750F embeds a nested interrupt
controller able to handle up to 32 vectors and 16 priority levels. This additional hardware
block provides flexible interrupt management features with minimal interrupt latency.
Introduction STR750Fxx STR751Fxx STR752Fxx STR755Fxx
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Serial memory interface (SMI)
The Serial Memory interface is directly able to access up to 4 serial FLASH devices. It can
be used to access data, execute code directly or boot the application from external memory.
The memory is addressed as 4 banks of up to 16 Mbytes each.
Clocks and start-up
After RESET or when exiting from Low Power Mode, the CPU is clocked immediately by an
internal RC oscillator (FREEOSC) at a frequency centered around 5 MHz, so the application
code can start executing without delay. In parallel, the 4/8 MHz Oscillator is enabled and its
stabilization time is monitored using a dedicated counter.
An oscillator failure detection is implemented: when the clock disappears on the XT1 pin, the
circuit automatically switches to the FREEOSC oscillator and an interrupt is generated.
In Run mode, the AHB and APB clock speeds can be set at a large number of different
frequencies thanks to the PLL and various prescalers: up to 60 MHz for AHB and up to 32
MHz for APB when fetching from Flash (64 MHz and 32 MHz when fetching from SRAM).
In SLOW mode, the AHB clock can be significantly decreased to reduce power
consumption.
The built-in Clock Controller also provides the 48 MHz USB clock directly without any extra
oscillators or PLL. For instance, starting from the 4 MHz crystal source, it is possible to
obtain in parallel 60 MHz for the AHB clock, 48 MHz for the USB clock and 30 MHz for the
APB peripherals.
Boot modes
At start-up, boot pins are used to select one of five boot options:
Boot from internal flash
Boot from external serial Flash memory
Boot from internal boot loader
Boot from internal SRAM
Booting from SMI memory allows booting from a serial flash. This way, a specific boot
monitor can be implemented. Alternatively, the STR750F can boot from the internal boot
loader that implements a boot from UART.
Power supply schemes
You can connect the device in any of the following ways depending on your application.
Power Scheme 1: Single external 3.3V power source. In this configuration the
VCORE supply required for the internal logic is generated internally by the main voltage
regulator and the VBACKUP supply is generated internally by the low power voltage
regulator. This scheme has the advantage of requiring only one 3.3V power source.
Power Scheme 2: Dual external 3.3V and 1.8V power sources. In this configuration,
the internal voltage regulators are switched off by forcing the VREG_DIS pin to high
level. VCORE is provided externally through the V18 and V18REG power pins and
VBACKUP through the V18_BKP pin. This scheme is intended to save power consumption
for applications which already provide an 1.8V power supply.
Power Scheme 3: Single external 5.0V power source. In this configuration the
VCORE supply required for the internal logic is generated internally by the main voltage
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Introduction
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regulator and the VBACKUP supply is generated internally by the low power voltage
regulator. This scheme has the advantage of requiring only one 5.0V power source.
Power Scheme 4: Dual external 5.0V and 1.8V power sources. In this configuration,
the internal voltage regulators are switched off, by forcing the VREG_DIS pin to high
level. VCORE is provided externally through the V18 and V18REG power pins and
VBACKUP through the V18_BKP pin. This scheme is intended to provide 5V I/O capability.
Caution: When powered by 5.0V, the USB peripheral cannot operate.
Low power modes
The STR750F supports 5 low power modes, SLOW, PCG, WFI, STOP and STANDBY.
SLOW MODE: the system clock speed is reduced. Alternatively, the PLL and the main
oscillator can be stopped and the device is driven by a low power clock (fRTC). The
clock is either an external 32.768 kHz oscillator or the internal low power RC oscillator.
PCG MODE (Peripheral Clock Gating MODE): When the peripherals are not used, their
APB clocks are gated to optimize the power consumption.
WFI MODE (Wait For Interrupts): only the CPU clock is stopped, all peripherals
continue to work and can wake-up the CPU when IRQs occur.
STOP MODE: all clocks/peripherals are disabled. It is also possible to disable the
oscillators and the Main Voltage Regulator (In this case the VCORE is entirely powered
by V18_BKP). This mode is intended to achieve the lowest power consumption with
SRAM and registers contents retained. The system can be woken up by any of the
external interrupts / wake-up lines or by the RTC timer which can optionally be kept
running. The RTC can be clocked either by the 32.768 kHz Crystal or the Low Power
RC Oscillator.
Alternatively, STOP mode gives flexibility to keep the either main oscillator, or the Flash
or the Main Voltage Regulator enabled when a fast start after wake-up is preferred (at
the cost of some extra power consumption).
STANDBY MODE: This mode (only available in single supply power schemes) is
intended to achieve the lowest power consumption even when the temperature is
increasing. The digital power supply (VCORE) is completely removed (no leakage even
at high ambient temperature). SRAM and all register contents are lost. Only the RTC
remains powered by V18_BKP
. The STR750F can be switched back from STANDBY to
RUN mode by a trigger event on the WKP_STDBY pin or an alarm timeout on the RTC
counter.
Caution: It is important to bear in mind that it is forbidden to remove power from the VDD_IO power
supply in any of the Low Power Modes (even in STANDBY MODE).
DMA
The flexible 4-channel general-purpose DMA is able to manage memory to memory,
peripheral to memory and memory to peripheral transfers. The DMA controller supports
circular buffer management avoiding the generation of interrupts when the controller
reaches the end of the buffer.
The DMA can be used with the main peripherals: UART0, SSP0, Motor control PWM timer
(PWM), standard timer TIM0 and ADC.
RTC (real-time clock)
The real-time clock provides a set of continuously running counters which can be used with
suitable software to provide a clock calendar function, and provides an alarm interrupt and a
Introduction STR750Fxx STR751Fxx STR752Fxx STR755Fxx
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periodic interrupt. It is clocked by an external 32.768 kHz oscillator or the internal low power
RC oscillator. The RC has a typical frequency of 300 kHz and can be calibrated.
WDG (watchdog timer)
The watchdog timer is based on a 16-bit downcounter and 8-bit prescaler. It can be used as
watchdog to reset the device when a problem occurs, or as free running timer for application
time out management.
Timebase timer (TB)
The timebase timer is based on a 16-bit auto-reload counter and not connected to the I/O
pins. It can be used for software triggering, or to implement the scheduler of a real-time
operating system.
Synchronizable standard timers (TIM2:0)
The three standard timers are based on a 16-bit auto-reload counter and feature up to 2
input captures and 2 output compares (for external triggering or time base / time out
management). They can work together with the PWM timer via the Timer Link feature for
synchronization or event chaining. In reset state, timer Alternate Function I/Os are
connected to the same
I/O ports in both 64-pin and 100-pin devices. To optimize timer functions in 64-pin devices,
timer Alternate Function I/Os can be connected, or “remapped”, to other I/O ports as
summarized in Ta b le 3 and detailed in Ta bl e 6 . This remapping is done by the application via
a control register.
Any of the standard timers can be used to generate PWM outputs. One timer (TIM0) is
mapped to a DMA channel.
Motor control PWM timer (PWM)
The Motor Control PWM Timer (PWM) can be seen as a three-phase PWM multiplexed on 6
channels. The 16-bit PWM generator has full modulation capability (0...100%), edge or
centre-aligned patterns and supports dead-time insertion. It has many features in common
with the standard TIM timers which has the same architecture and it can work together with
the TIM timers via the Timer Link feature for synchronization or event chaining.The PWM
timer is mapped to a DMA channel.
Table 3. Standard timer alternate function I/Os
Standard timer functions
Number of alternate function I/Os
100-pin
package
64-pin package
Default mapping Remapped
TIM 0 Input Capture 2 1 2
Output Compare/PWM 2 1 2
TIM 1 Input Capture 2 1 1
Output Compare/PWM 2 1 1
TIM 2 Input Capture 2 2 2
Output Compare/PWM 2 1 2
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I²C bus
The I²C bus interface can operate in multi-master and slave mode. It can support standard
and fast modes (up to 400KHz).
High speed universal asynch. receiver transmitter (UART)
The three UART interfaces are able to communicate at speeds of up to 2 Mbit/s. They
provide hardware management of the CTS and RTS signals and have LIN Master capability.
To optimize the data transfer between the processor and the peripheral, two FIFOs
(receive/transmit) of 16 bytes each have been implemented.
One UART can be served by the DMA controller (UART0).
Synchronous serial peripheral (SSP)
The two SSPs are able to communicate up to 8 Mbit/s (SSP1) or up to 16 Mbit/s (SSP0) in
standard full duplex 4-pin interface mode as a master device or up to 2.66 Mbit/s as a slave
device. To optimize the data transfer between the processor and the peripheral, two FIFOs
(receive/transmit) of 8 x 16 bit words have been implemented. The SSPs support the
Motorola SPI or TI SSI protocols.
One SSP can be served by the DMA controller (SSP0).
Controller area network (CAN)
The CAN is compliant with the specification 2.0 part B (active) with a bit rate up to 1Mbit/s. It
can receive and transmit standard frames with 11-bit identifiers as well as extended frames
with 29-bit identifiers. Up to 32 message objects are handled through an internal RAM
buffer. In LQFP64 devices, CAN and USB cannot be connected simultaneously.
Universal serial bus (USB)
The STR750F embeds a USB device peripheral compatible with the USB Full speed 12Mbs.
The USB interface implements a full speed (12 Mbit/s) function interface. It has software
configurable endpoint setting and suspend/resume support. The dedicated 48 MHz clock
source is generated from the internal main PLL. VDD must be in the range 3.3V±10% for
USB operation.
ADC (analog to digital converter)
The 10-bit Analog to Digital Converter, converts up to 16 external channels (11 channels in
64-pin devices) in single-shot or scan modes. In scan mode, continuous conversion is
performed on a selected group of analog inputs. The minimum conversion time is 3.75 µs
(including the sampling time).
The ADC can be served by the DMA controller.
An analog watchdog feature allows you to very precisely monitor the converted voltage of up
to four channels. An IRQ is generated when the converted voltage is outside the
programmed thresholds.
The events generated by TIM0, TIM2 and PWM timers can be internally connected to the
ADC start trigger, injection trigger, and DMA trigger respectively, to allow the application to
synchronize A/D conversion and timers.
Introduction STR750Fxx STR751Fxx STR752Fxx STR755Fxx
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GPIOs (general purpose input/output)
Each of the 72 GPIO pins (38 GPIOs in 64-pin devices) can be configured by software as
output (push-pull or open-drain), as input (with or without pull-up or pull-down) or as
Peripheral Alternate Function. Port 1.15 is an exception, it can be used as general-purpose
input only or wake-up from STANDBY mode (WKP_STDBY). Most of the GPIO pins are
shared with digital or analog alternate functions.
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Introduction
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3.2 Block diagram
Figure 1. STR750 block diagram
P0[31:0]
EXT.IT
WATCHDOG
NESTED
10-bit ADC
JTAG & ICE-RT
ARM7TDMI-S
16AF
JTDI
JTCK
JTMS
NJTRST
JTDO
NRSTIN
NRSTOUT
V
18
V
DD_IO
15AF
VDDA_ADC
VSSA_ADC
P1[19:0]
APB
BRIDGE
USB Full Speed USBDP
USBDM
MOSI,MISO,
UART0
RX,TX,CTS,
SERIAL MEMORY
SRAM 16KB
RX,TX,CTS,
FIFO
2x(16x8bit)
UART1
FIFO
2x(16x8bit)
SSP1
FIFO
2x(8x16bit)
WAKEUP
4 CS as AF
GPIO PORT 0
GPIO PORT 1
60MHz
V
18BKP
MOSI,MISO,
SSP0
FIFO
2x(8x16bit)
SCL,SDA
I2C
RX,TX,CTS,
UART2
FIFO
2x(16x8bit)
TEST
GP DMA
2xICAP, 2xOCMP
2xICAP, 2xOCMP
2xICAP, 2xOCMP
XT1
XT2
RTC_XT1
RTC_XT2
PLL
APB (up to 32 MHz)
V
DDA_PLL
V
SSA_PLL
CK_USB
CK_RTC
as AF
as AF
as AF
as AF
RTS as AF
RTS as AF
as AF
as AF
as AF
FLASH 256KB
DC-DC
3.3V TO 1.8V
V
CORE
V
DD_IO
RESET &
POWER
MAIN
V
SS
RTC
as AF
Arbiter
PWM1, PWM1N
PWM2, PWM2N
PWM3, PWM3N
PWM_EMERGENCY
as AF
+16KB (RWW)
SCLK, MOSI
MISO as AF
4 streams
BUS MATRIX
AHB LITE (up to 60MHz)
CPU
INTERFACE
P2[19:0] GPIO PORT 2
AF: alternate function on I/O port pin
Note: I/Os shown for 100 pin devices. 64-pin devices have the I/O set shown in Figure 3.
CAN 2.0B RX,TX
as AF
SCK,NSS
SCK,NSS
TB TIMER
RTS
TIM0 TIMER
TIM1 TIMER
TIM2 TIMER
PWM TIMER
CK_SYS
AHB
AHB
INTERRUPT CTL
OSC
32xIRQ
2xFIQ
V
BACKUP
V
DDA_ADC
V
DDA_PLL
LOW POWER
HRESETN
PRESETN
PCLK
HCLK
4M
OSC
32K
LP
OSC
FREE
OSC
CLOCK
MANAGE-
MENT
BOOT0
BOOT1,
as AF
Pin description STR750Fxx STR751Fxx STR752Fxx STR755Fxx
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4 Pin description
Figure 2. LQFP100 pinout
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
ADC_IN13 / P1.12
ADC_IN0 / TIM2_OC1/ P0.02
MCO / TIM0_TI1 / P0.01
BOOT0 / TIM0_OC1 / P0.00
TIM1_TI2 / P0.31
TIM1_OC2 / P0.30
ADC_IN8 / TIM1_TI1 / P0.29
TIM1_OC1 / P0.28
TEST
VSS_IO
ADC_IN6 / UART1_RTS / P0.23
TIM2_OC1/ P2.04
UART1_RTS / P2.03
P2.02
ADC_IN5 / UART1_CTS / P0.22
UART1_TX / P0.21
UART1_RX / P0.20
JTMS / P1.19
JTCK / P1.18
JTDO / P1.17
JTDI / P1.16
NJTRST
P2.01
P2.00
UART0_RTS / RTCK / P0.13
VREG_DIS
VSS_IO
VSSA_ADC
P2.10
P2.11
VDDA_ADC
VDD_IO
P1.02 / TIM2_OC2
P1.03 / TIM2_TI2
USB_DP
USB_DN
P0.14 / CAN_RX
P0.15 / CAN_TX
P2.12
P2.13
P1.15 / WKP_STDBY
NRSTIN
NRSTOUT
XRTC2
XRTC1
V18BKP
VSSBKP
VSS18
V18REG
P2.14
SMI_CS1 / ADC_IN2 / UART0_CTS / P0.12
SMI_CS2 / BOOT1 / UART0_TX / P0.11
SMI_CS3 / UART0_RX / P0.10
I2C_SDA / P0.09
I2C_SCL / P0.08
P2.19
P2.18
UART2_RTS / P2.17
ADC_IN12 / UART0_RTS P1.11
ADC_IN7 /UART2_RTS / P0.27
UART2_CTS / P0.26
UART2_TX / P0.25
UART2_RX / P0.24
ADC_IN4 / SSP1_NSS / USB_CK / P0.19
SSP1_MOSI / P0.18
ADC_IN3 / SSP1_MISO / P0.17
SSP1_SCLK / P0.16
P2.16
VDD_IO
VDDA_PLL
XT2
XT1
VSS_IO
VSSA_PLL
P2.15
P0.03 / TIM2_TI1 / ADC_IN1
VDD_IO
VSS_IO
VSS18
V18
P1.00 / TIM0_OC2
P1.01 / TIM0_TI2
P1.13 / ADC_IN14
P1.14/ ADC_IN15
P1.04 / PWM3N / ADC_IN9
P1.05 / PWM3
P1.06 / PWM2N/ ADC_IN10
P1.07 / PWM2
P1.08 / PWM1N/ ADC_IN11
P2.05 / PWM3N
P2.06 / PWM3
P2.07 / PWM2N
P2.08 / PWM2
P2.09 / PWM1N
P1.09 / PWM1
P1.10 / PWM_EMERGENCY
P0.04 / SMI_CS0 / SSP0_NSS
P0.05 / SSP0_SCLK / SMI_CK
P0.06 / SMI_DIN / SSP0_MISO
P0.07 / SMI_DOUT / SSP0_MOSI
LQFP100
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
V
18BKP
I/Os
= 16 A/D input channels
= 15 External interrupts / Wake-up Lines
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Pin description
13/84
Figure 3. LQFP64 pinout
I2C_SCL / P0.08
ADC_IN12 / UART0_RTS / P1.11
ADC_IN4 / SSP1_NSS / USB_CK / P0.19
SSP1_MOSI / P0.18
ADC_IN3 / SSP1_MISO / P0.17
SSP1_SCLK / P0.16
VDD_IO_3
VDDA_PLL
XT2
XT1
VSS_IO_3
VSSA_PLL
SMI_CS1 / ADC_IN2 / UART0_CTS / UART2_RX /P0.12
SMI_CS2 / BOOT1 / UART0_TX / P0.11
SMI_CS3 / UART0_RX / P0.10
I2C_SDA/ P0.09
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
17 18 19 20 21 22 23 24 29 30 31 32
25 26 27 28
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
ADC_IN8 / TIM1_TI1 / P0.29
TIM1_OC1 / P0.28
TEST
VSS_IO_4
UART1_TX / P0.21
UART1_RX / P0.20
JTMS / P1.19
JTCK / P1.18
JTDO / P1.17
JTDI / P1.16
NJTRST
UART2_TX / UART0_RTS / RTCK / P0.13
ADC_IN13 / P1.12
ADC_IN0 / TIM2_OC1 / P0.02
MCO / TIM0_TI1 / P0.01
BOOT0 / TIM0_OC1 / P0.00
VDD_IO_2
P1.03 / TIM2_TI2
P0.14 / CAN_RX or USB_DP
P0.15 / CAN_TX or USB_DN
NRSTIN
NRSTOUT
XRTC2
XRTC1
V18BKP
VSSBKP
VSS18
V18REG
VREG_DIS
VSS_IO_2
VSSA_ADC
VDDA_ADC
V18
P1.04 / PWM3N / ADC_IN9
P1.05 / PWM3
P1.06 / PWM2N / ADC_IN10
P1.07 / PWM2
P1.08 / PWM1N / ADC_IN11
P1.09 / PWM1
P1.10 / PWM_EMERGENCY
P0.04 / SMI_CS0 /SSP0_NSS
P0.05 / SSP0_SCLK / SMI_CK
P0.06 / SMI_DIN / SSP0_MISO
P0.07 / SMI_DOUT / SSP0_MOSI
P0.03 / TIM2_TI1 / ADC_IN1
VDD_IO_1
VSS_IO_1
VSS18
LQFP64
= 11 A/D input channels
= 13 External interrupts / Wake-up Lines
V
18BKP
I/Os
Pin description STR750Fxx STR751Fxx STR752Fxx STR755Fxx
14/84
Table 4. LFBGA100 ball connections
123456 7 8 9 10
AP0.03 P1.13 P1.14 P1.04 P1.06 P1.08 P0.05 P0.06 P0.07 P1.02
BP1.12 P0.02 P0.01 P1.05 P1.07 P1.09 P0.04 P2.13 P1.03 P2.10
CP0.31 P0.00 VDD_IO V18 P1.10 P2.09 VSS_IO VSSA_ADC P2.11 USB_DP
DP0.29 P0.30 VSS_IO VSS18 P1.01 P1.15 VDD_IO VDDA_ADC P2.12 USB_DN
EP0.28 P0.23 P0.22 VSS_IO TEST P1.00 NRSTOUT VREG_DIS NRSTIN P0.14
FP2.03 P0.21 P0.20 P2.02 P2.04 P2.05 P2.06 VSS18 VSSBKP P0.15
GNJTRST P1.18 P1.19 P2.01 P2.00 P2.07 2.08 V18REG V18BKP XRTC2
HP0.13 P1.16 P1.17 P2.19 P2.18 P2.17 P0.24 P2.14 P2.16 XRTC1
JP0.11 P0.12 P1.11 P0.27 P0.19 P0.26 P0.25 P2.15 VDD_IO VSS_IO
KP0.10 P0.09 P0.08 P0.18 P0.17 P0.16 XT1 XT2 VDDA_PLL VSSA_PLL
Table 5. LFBGA64 ball connections
1234 5 678
AP0.03 VSS_IO P1.04 P1.06 P1.08 P0.05 P0.06 P0.07
BP1.12 VDD_IO P1.05 P1.07 P1.09 P0.04 P1.10 P1.03
CP0.01 P0.02 P0.00 V18 VSS18 VDD_IO VSS_IO P0.14
DP0.29 P0.28 TEST VSS_IO VREG_DIS VDDA_ADC VSSA_ADC P0.15
EP1.18 P1.19 P0.20 P0.21 NRSTOUT NRSTIN V18BKP XRTC2
FP0.13 NJTRST P1.16 P1.17 V18REG VSS18 VSSBKP XRTC1
GP0.11 P0.12 P1.11 P0.19 VDD_IO VSS_IO VDDA_PLL VSSA_PLL
HP0.10 P0.09 P0.08 P0.17 P0.18 P0.16 XT2 XT1
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Pin description
15/84
4.1 Pin description table
Legend / abbreviations for Tabl e 6:
Type: I = input, O = output, S = supply,
Input levels: All Inputs are LVTTL at VDD_IO = 3.3V+/-0.3V or TTL
at VDD_IO =5V± 0.5V. In both cases, TT means
VILmax =0.8V VIHmin=2.0V
Inputs: All inputs can be configured as floating or with
internal weak pull-up or pull down (pu/pd)
Outputs: All Outputs can be configured as Open Drain (OD) or
Push-Pull (PP) (see also note 6 below Ta b l e 6 ).
There are 3 different types of Output with different
drives and speed characteristics:
–O8: f
max = 40 MHz on CL=50pF and 8 mA static
drive capability for VOL=0.4V and up to 20 mA for
VOL=1.3V (seeOutput driving current on page 55)
–O4: f
max = 20 MHz on CL=50pF and 4 mA static
drive capability for VOL=0.4V (seeOutput driving
current on page 55)
–O2: f
max = 10 MHz on CL=50pF and 2 mA static
drive capability of for VOL=0.4V (seeOutput driving
current on page 55)
External interrupts/wake-up lines: EITx
Pin description STR750Fxx STR751Fxx STR752Fxx STR755Fxx
16/84
Port reset state
The reset state of the I/O ports is GPIO input floating. Exceptions are P1[19:16] and P0.13
which are configured as JTAG alternate functions:
The JTAG inputs (JTDI, JTMS and JTDI) are configured as input floating and are ready
to accept JTAG sequences.
The JTAG output JTDO is configured as floating when idle (no JTAG operation) and is
configured in output push-pull only when serial JTAG data must be output.
The JTAG output RTCK is always configured as output push-pull. It outputs '0' level
during the reset phase and then outputs the JTCK input signal resynchronized 3 times
by the internal AHB clock.
The GPIO_PCx registers do not control JTAG AF selection, so the reset values of
GPIO_PCx for P1[19:16] and P0. 13 are the same as other ports. Refer to the GPIO
section of the STR750 Reference Manual for the register description and reset values.
P0.11 and P0.00 are sampled by the boot logic after reset, prior to fetching the first
word of user code at address 0000 0000h.
When booting from SMI (and only in this case), the reset state of the following GPIOs is
"SMI alternate function output enabled":
P0.07 (SMI_DOUT)
P0.05 (SMI_CLK)
P0.04 (SMI_CS0)
P0.06 (SMI_DIN)
Note that the other SMI pins: SMI_CS1,2,3 (P0.12, P0.11, P0.10) are not affected.
To avoid excess power consumption, unused I/O ports must be tied to ground.
Table 6. STR750F pin description
Pin n°
Pin name
Type
Input Output
Usable in Standby
Main
function
(after
reset)
Alternate function
LQFP100(1)
LFBGA100(1)
LQFP64(2)
LFBGA64(2)
Input Level
floating
pu/pd
Ext. int /Wake-up
Capability
OD
(3) PP
1B11B1
P1.12 /
ADC_IN13 I/O TTXXEIT12O8 X X Port 1.12 ADC: Analog
input 13
2B22C2
P0.02 /
TIM2_OC1 /
ADC_IN0
I/O TTXXEIT0O8 X X Port 0.02 TIM2: Output
Compare 1(4) ADC: Analog
input 0
3B33C1
P0.01 / TIM0_TI1
/ MCO I/O TTXXO8XXPort 0.01
TIM0: Input
Capture / trigger
/ external clock 1
Main Clock
Output
4C24C3
P0.00 /
TIM0_OC1 /
BOOT0
I/O TTXXO8XX
Port 0.00 /
Boot mode
selection
input 0
TIM0: Output Compare 1
5 C1 P0.31 / TIM1_TI2 I/O TTXXO2XXPort 0.31 TIM1: Input Capture / trigger /
external clock 2
6D2 P0.30 /
TIM1_OC2 I/O TTXXO2XXPort 0.30 TIM1: Output Compare 2
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Pin description
17/84
7D15D1
P0.29 / TIM1_TI1
/ ADC_IN8 I/O TTXXO2XXPort 0.29 TIM1: Input
Capture 1
ADC: Analog
input 8
8E16D2
P0.28 /
TIM1_OC1 I/O TTXXO2XXPort 0.28 TIM1: Output Compare 1
9 E5 7 D3 TEST I Reserved, must be tied to ground
10 E4 8 D4 VSS_IO S Ground Voltage for digital I/Os
11 E2
P0.23 /
UART1_RTS /
ADC_IN6
I/O TTXXO2XXPort 0.23
UART1: Ready
To Send
output(4)
ADC analog input
6
12 F5 P2.04 /
TIM2_OC1 I/O TTXXO2XXPort 2.04 TIM2: Output
Compare 1(4)
13 F1 P2.03 /
UART1_RTS I/O TTXXO2XXPort 2.03
UART1: Ready
To Send
output(4)
14 F4 P2.02 I/O TTXXO2XXPort 2.02
15 E3
P0.22 /
UART1_CTS /
ADC_IN5
I/O TTXXO2XXPort 0.22 UART1: Clear To
Send input
ADC: Analog
input 5
16 F2 9 E4 P0.21 /
UART1_TX I/O TTXXO2XXPort 0.21 UART1: Transmit data output
(remappable to P0.15)(4)
17 F3 10 E3 P0.20 /
UART1_RX I/O TTXXO2XXPort 0.20 UART1: Receive data input
(remappable to P0.14)(4)
18 G3 11 E2 P1.19 / JTMS I/O TTXX O2 X X
JTAG mode
selection
input(6) Por t 1.19
19 G2 12 E1 P1.18 / JTCK I/O TTXX O2 X X JTAG clock
input(6) Por t 1.18
20 H3 13 F4 P1.17 / JTDO I/O TTXX O8 X X JTAG data
output(6) Por t 1.17
21 H2 14 F3 P1.16 / JTDI I/O TTXX O2 X X JTAG data
input(6) Por t 1.16
22 G1 15 F2 NJTRST I TTJTAG reset input(5)
23 G4 P2.01 I/O TTXXO2XXPort 2.01
24 G5 P2.00 I/O TTXXO2XXPort 2.00
25 H1 16 F1
P0.13 / RTCK /
UART0_RTS
UART2_TX
I/O TTXX O8 X X
JTAG
return
clock
output(6)
Por t 0.13
UART0: Ready
To Send
output(4)
UART2: Transmit
Data output
(when
remapped)(8)
Table 6. STR750F pin description (continued)
Pin n°
Pin name
Type
Input Output
Usable in Standby
Main
function
(after
reset)
Alternate function
LQFP100(1)
LFBGA100(1)
LQFP64(2)
LFBGA64(2)
Input Level
floating
pu/pd
Ext. int /Wake-up
Capability
OD
(3) PP
Pin description STR750Fxx STR751Fxx STR752Fxx STR755Fxx
18/84
26 J2 17 G2
P0.12 /
UART2_RX /
UART0_CTS /
ADC_IN2 /
SMI_CS1
I/O TTXXO4XXPort 0.12
UART0: Clear To
Send input
ADC: Analog
input 2
Serial Memory
Interface: chip
select output 1
UART2: Receive
Data input (when
remapped)(8)
27 J1 18 G1
P0.11 /
UART0_TX /
BOOT1 /
SMI_CS2
I/O TTXXO4XX
Port
0.11/Boot
mode
selection
input 1
UART0: Transmit
data output
Serial Memory
Interface: chip
select output 2
28 K1 19 H1
P0.10 /
UART0_RX /
SMI_CS3
I/O TTXXEIT4O2 X X Port 0.10 UART0: Receive
Data input
Serial Memory
Interface: chip
select output 3
29 K2 20 H2 P0.09 / I2C_SDA I/O TTXXO4XXPort 0.09 I2C: Serial Data
30 K3 21 H3 P0.08 / I2C_SCL I/O TTXXEIT3O4 X X Port 0.08 I2C: Serial clock
31 H4 P2.19 I/O TTXXO2XXPort 2.19
32 H5 P2.18 I/O TTXXO2XXPort 2.18
33 H6 P2.17 /
UART2_RTS I/O TTXXO2XXPort 2.17 UART2: Ready To Send output(4)
34 J3 22 G3
P1.11
/UART0_RTS
ADC_IN12
I/O TTXXEIT11O8 X X Port 1.11
UART0: Ready
To Send
output(4)
ADC: Analog
input 12
35 J4
P0.27 /
UART2_RTS /
ADC_IN7
I/O TTXXO2XXPort 0.27
UART2: Ready
To Send
output(8)
ADC: Analog
input 7
36 J6 P0.26 /
UART2_CTS I/O TTXXO2XXPort 0.26 UART2: Clear To Send input
37 J7 P0.25 /
UART2_TX I/O TTXXO2XXPort 0.25 UART2: Transmit data output
(remappable to P0.13)(8)
38 H7 P0.24 /
UART2_RX I/O TTXXO2XXPort 0.24 UART2: Receive data input
(remappable to P0.12)(8)
39 J5 23 G4
P0.19 / USB_CK /
SSP1_NSS /
ADC_IN4
I/O TTXXEIT6O2 X X Port 0.19
SSP1: Slave
select input
(remappable to
P0.11)(8)
ADC: Analog
input 4
USB:
48 MHz Clock
input
40 K4 24 H5 P0.18 /
SSP1_MOSI I/O TTXXO2XXPort 0.18 SSP1: Master out/slave in data
(remappable to P0.10)(8)
41 K5 25 H4
P0.17 /
SSP1_MISO /
ADC_IN3
I/O TTXXO2XXPort 0.17
SSP1: Master
in/slave out data
(remappable to
P0.09)(8)
ADC: Analog
input 3
42 K6 26 H6 P0.16 /
SSP1_SCLK I/O TTXXO2XXPort 0.16 SSP1: serial clock (remappable to
P0.08)(8)
Table 6. STR750F pin description (continued)
Pin n°
Pin name
Type
Input Output
Usable in Standby
Main
function
(after
reset)
Alternate function
LQFP100(1)
LFBGA100(1)
LQFP64(2)
LFBGA64(2)
Input Level
floating
pu/pd
Ext. int /Wake-up
Capability
OD
(3) PP
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Pin description
19/84
43 H9 P2.16 I/O TTXXO2XXPort 2.16
44 J9 27 G5 VDD_IO S Supply voltage for digital I/Os
45 K9 28 G7 VDDA_PLL S Supply voltage for PLL
46 K8 29 H7 XT2
4 MHz main oscillator
47 K7 30 H8 XT1
48 J10 31 G6 VSS_IO S Ground voltage for digital I/Os
49 K10 32 G8 VSSA_PLL S Ground voltage for PLL
50 J8 P2.15 I/O TTXXO2XXPort 2.15
51 H8 P2.14 I/O TTXXO2XXPort 2.14
52 G8 33 F5 V18REG S
Stabilization for main voltage regulator. Requires
external capacitors of at least 10µF between
V18REG and VSS18. See Figure 4.2.
To be connected to the 1.8V external power supply
when embedded regulators are not used,
53 F8 34 F6 VSS18 S Ground Voltage for the main voltage regulator
54 F9 35 F7 VSSBKP S Stabilization for low power voltage regulator.
55 G9 36 E7 V18BKP S
Ground Voltage for the low power voltage regulator.
Requires external capacitors of at least 1µF
between V18BKP and VSSBKP. See Figure 4.2.
To be connected to the 1.8V external power supply
when embedded regulators are not used,
56 H10 37 F8 XRTC1 X
32 kHz oscillator for Realtime Clock
57 G10 38 E8 XRTC2 X
58 E7 39 E5 NRSTOUT O X Reset output
59 E9 40 E6 NRSTIN I TTX Reset input
60 D6 P1.15 /
WKP_STDBY IT
TXEIT15 X Port 1.15 Wake-up from STANDBY input pin
61 B8 P2.13 I/O TTXXO2XXPort 2.13
62 D9 P2.12 I/O TTXXO2XXPort 2.12
63 F10 41
(7) D8
(7) P0.15 / CAN_TX I/O TTXXO2XXPort 0.15 CAN: Transmit data output
64 E10 42
(7) C8
(7) P0.14 / CAN_RX I/O TTXXEIT5O2 X X Port 0.14 CAN: Receive data input
65 D10 41
(7) D8
(7) USB_DN I/O USB: bidirectional data (data -)
66 C10 42
(7) C8
(7) USB_DP I/O USB: bidirectional data (data +)
67 B9 43 B8 P1.03 / TIM2_TI2 I/O TTXXO2XXPort 1.03
TIM2: Input Capture / trigger /
external clock 2 (remappable to
P0.07)(8)
Table 6. STR750F pin description (continued)
Pin n°
Pin name
Type
Input Output
Usable in Standby
Main
function
(after
reset)
Alternate function
LQFP100(1)
LFBGA100(1)
LQFP64(2)
LFBGA64(2)
Input Level
floating
pu/pd
Ext. int /Wake-up
Capability
OD
(3) PP
Pin description STR750Fxx STR751Fxx STR752Fxx STR755Fxx
20/84
68 A10 P1.02 /
TIM2_OC2 I/O TTXXO2XXPort 1.02 TIM2: Output compare 2
(remappable to P0.06)(8)
69 D7 44 C6 VDD_IO S Supply Voltage for digital I/Os
70 D8 45 D6 VDDA_ADC S Supply Voltage for A/D converter
71 C9 P2.11 I/O TTXXO2XXPort 2.11
72 B10 P2.10 I/O TTXXO2XXPort 2.10
73 C8 46 D7 VSSA_ADC S Ground Voltage for A/D converter
74 C7 47 C7 VSS_IO S Ground Voltage for digital I/Os
75 E8 48 D5 VREG_DIS I TTVoltage Regulator Disable input
76 A9 49 A8
P0.07 /
SMI_DOUT /
SSP0_MOSI
I/O TTXXEIT2O4 X X Port 0.07
Serial Memory
Interface: data
output
SSP0: Master out
Slave in data
77 A8 50 A7 P0.06 / SMI_DIN
/ SSP0_MISO I/O TTXXO4XXPort 0.06
Serial Memory
Interface: data
input
SSP0: Master in
Slave out data
78 A7 51 A6
P0.05 /
SSP0_SCLK /
SMI_CK
I/O TTXXEIT1O4 X X Port 0.05 SSP0: Serial
clock
Serial Memory
Interface: Serial
clock output
79 B7 52 B6 P0.04 / SMI_CS0
/ SSP0_NSS I/O TTXXO4XXPort 0.04
Serial Memory
Interface: chip
select output 0
SSP0: Slave
select input
80 C5 53 B7
P1.10
PWM_EMERGE
NCY
I/O TTXXEIT10O2 X X Port 1.10 PWM: Emergency input
81 B6 54 B5 P1.09 / PWM1 I/O TTXXEIT9O4 X X Port 1.09 PWM: PWM1 output
82 C6 P2.09 / PWM1N I/O TTXXO2XXPort 2.09 PWM: PWM1 complementary
output(4)
83 G7 P2.08 / PWM2 I/O TTXXO2XXPort 2.08 PWM: PWM2 output(4)
84 G6 P2.07 / PWM2N I/O TTXXO2XXPort 2.07 PWM: PWM2 complementary
output(4)
85 F7 P2.06 / PWM3 I/O TTXXO2XXPort 2.06 PWM: PWM3 output(4)
86 F6 P2.05 / PWM3N I/O TTXXO2XXPort 2.05 PWM: PWM3 complementary
output(4)
87 A6 55 A5 P1.08 / PWM1N /
ADC_IN11 I/O TTXXO4XXPort 1.08
PWM: PWM1
complementary
output(8)
ADC: analog
input 11
88 B5 56 B4 P1.07 / PWM2 I/O TTXXEIT8O4 X X Port 1.07 PWM: PWM2 output(4)
89 A5 57 A4 P1.06 / PWM2N /
ADC_IN10 I/O TTXXO4XXPort 1.06
PWM: PWM2
complementary
output(4)
ADC: analog
input 10
90 B4 58 B3 P1.05 / PWM3 I/O TTXXEIT7O4 X X Port 1.05 PWM: PWM3 output(4)
Table 6. STR750F pin description (continued)
Pin n°
Pin name
Type
Input Output
Usable in Standby
Main
function
(after
reset)
Alternate function
LQFP100(1)
LFBGA100(1)
LQFP64(2)
LFBGA64(2)
Input Level
floating
pu/pd
Ext. int /Wake-up
Capability
OD
(3) PP
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Pin description
21/84
91 A4 59 A3 P1.04 / PWM3N /
ADC_IN9 I/O TTXXO4XXPort 1.04
PWM: PWM3
complementary
output(4)
ADC: analog
input 9
92 A3 P1.14 /
ADC_IN15 I/O TTXXO8XXPort 1.14 ADC: analog input 15
93 A2 P1.13 /
ADC_IN14 I/O TTXXEIT13O8 X X Port 1.13 ADC: analog input 14
94 D5 P1.01 / TIM0_TI2 I/O TTXXO2XXPort 1.01
TIM0: Input Capture / trigger /
external clock 2 (remappable to
P0.05)(8)
95 E6 P1.00 /
TIM0_OC2 I/O TTXXO2XXPort 1.00 TIM0: Output compare 2
(remappable to P0.04)(8)
96 C4 60 C4 V18 S
Stabilization for main voltage regulator. Requires
external capacitors 33nF between V18 and VSS18.
See Figure 4.2.
To be connected to the 1.8V external power supply
when embedded regulators are not used.
97 D4 61 C5 VSS18 S Ground Voltage for the main voltage regulator.
98 D3 62 A2 VSS_IO S Ground Voltage for digital I/Os
99 C3 63 B2 VDD_IO S Supply Voltage for digital I/Os
100 A1 64 A1 P0.03 / TIM2_TI1
/ ADC_IN1 I/O TTXXO2XXPort 0.03
TIM2: Input
Capture / trigger
/ external clock 1
ADC: analog
input 1
1. For STR755FVx part numbers, the USB pins must be left unconnected.
2. The non available pins on LQPFP64 and LFBGA64 packages are internally tied to low level.
3. None of the I/Os are True Open Drain: when configured as Open Drain, there is always a protection diode between the I/O
pin and VDD_IO.
4. In the 100-pin package, this Alternate Function is duplicated on two ports. You can configure one port to use this AF, the
other port is then free for general purpose I/O (GPIO), external interrupt/wake-up lines, or analog input (ADC_IN) where
these functions are listed in the table.
5. It is mandatory that the NJTRST pin is reset to ground during the power-up phase. It is recommended to connect this pin to
NRSTOUT pin (if available) or NRSTIN.
6. After reset, these pins are enabled as JTAG alternate function see (Port reset state on page 16). To use these ports as
general purpose I/O (GPIO), the DBGOFF control bit in the GPIO_REMAP0R register must be set by software (in this case,
debugging these I/Os via JTAG is not possible).
7. There are two different TQFP and BGA 64-pin packages: in the first one, pins 41 and 42 are mapped to USB DN/DP while
for the second one, they are mapped to P0.15/CAN_TX and P0.14/CAN_RX.
8. For details on remapping these alternate functions, refer to the GPIO_REMAP0R register description.
Table 6. STR750F pin description (continued)
Pin n°
Pin name
Type
Input Output
Usable in Standby
Main
function
(after
reset)
Alternate function
LQFP100(1)
LFBGA100(1)
LQFP64(2)
LFBGA64(2)
Input Level
floating
pu/pd
Ext. int /Wake-up
Capability
OD
(3) PP
Pin description STR750Fxx STR751Fxx STR752Fxx STR755Fxx
22/84
4.2 External components
Figure 4. Required external capacitors when regulators are used
LQFP100 LQFP64
52
60
96
33 nF
53
10 µF
33 nF
54
55
1µF 61
V18
V18REG
V18 V18BKP
97
VSS18
VSSBKP
44
VDD_IO
1 µF
VSS18
VSS18
33
34
10 µF
35
36
1µF
V18REG
V18BKP
VSS18
VSSBKP
27
VDD_IO
1 µF
LFBGA100
G8
C4
33 nF
F8
10 µF
F9
G9
1µF
V18REG
V18 V18BKP
D4
VSS18
VSSBKP
J9
VDD_IO
1 µF
VSS18
LFBGA64
C4
33 nF
C5
V18
VSS18
F5
F6
10 µF
F7
E7
1µF
V18REG
V18BKP
VSS18
VSSBKP
G5
VDD_IO
1 µF
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Memory map
23/84
5 Memory map
Figure 5. Memory map
Reserved
Addressable Memory Space
0
1
2
3
4
1K
5
6
7
0x1FFF FFFF
0x2000 0000
0x3FFF FFFF
0x4000 0000
0x5FFF FFFF
0x6000 0000
0x7FFF FFFF
0x8000 0000
0x9FFF FFFF
0xA000 0000
0xBFFF FFFF
0xC000 0000
0xDFFF FFFF
0xE000 0000
0xFFFF FFFF
0xFFFF 8000
0xFFFF 83FF
0xFFFF 8400
0xFFFF 87FF
0xFFFF 8800
0xFFFF 8BFF
0xFFFF 8C00
0xFFFF 8FFF
0xFFFF 9000
0xFFFF 93FF
0xFFFF 9400
0xFFFF 97FF
0xFFFF 9800
0xFFFF 9BFF
0xFFFF 9C00
0xFFFF 9FFF
0xFFFF A000
0xFFFF A3FF
0xFFFF A800
0xFFFF ABFF
0xFFFF AC00
0xFFFF AFFF
0xFFFF B000
0xFFFF C3FF
0xFFFF C400
0xFFFF C7FF
0xFFFF C800
0xFFFF CBFF
0xFFFF CC00
0xFFFF D000
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
0x6000 0047
0x0000 0000
Peripheral Memory Space
4 Gbytes 32 Kbytes
Boot Memory
(1)
128K/256K
CONF + MRCC
1K
APB TO ARM7
BRIDGE
0xFFFF 8000
32K
Reserved
0xFFFF CFFF
Internal SRAM
16K
0x4000 3FFF
SMI Ext. Memory
0x83FF FFFF
4 x 16M
0xFFFF C000
0xFFFF D400
0xFFFF D3FF
0xFFFF D800
0xFFFF D7FF
0xFFFF DC00
0xFFFF DBFF
0xFFFF E000
0xFFFF DFFF
0xFFFF E400
0xFFFF E3FF
0xFFFF E800
0xFFFF E7FF
0xFFFF EC00
0xFFFF EBFF
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
ADC
TIM0
TIM1
TIM2
PWM
USB Registers
CAN
Reserved
I2C
Reserved
UART0
UART1
UART2
Reserved
RTC
EIC
0xFFFF F800
0xFFFF F7FF
0xFFFF F400
0xFFFF F3FF
0xFFFF F000
0xFFFF EFFF
0xFFFF B3FF
0xFFFF B400
0xFFFF B7FF
0xFFFF B800
1K
0xFFFF BBFF
GPIO I/O Ports
Reserved
DMA
WDG
Reserved
SSP0
SSP1
1K
0xFFFF BFFF
0xFFFF BC00
TB Timer
Reserved
FLASH Memory Space
128/256 Kbytes
B0F5
0x2000 1FFF
0x2000 0000
0x2000 2000
0x2000 3FFF
0x2000 4000
0x2000 5FFF
0x2000 6000
0x2000 7FFF
0x2000 8000
0x2000 FFFF
0x2001 0000
0x2001 FFFF
0x2010 0000
0x2010 0017
0x2010 C000
0x2010 DFFF
8K
8K
8K
8K
32K
24B
64K
B0F4
Flash registers
Internal Flash
128K/256K+16K+32B
B0F6
(2)
0x2002 0000
0x2002 FFFF
64K
B0F7
(2)
0x2003 0000
0x2003 FFFF
64K
Reserved
0xFFFF A200
EXTIT
0x2010 0017
B0F3
B0F2
B0F1
B0F0
1K
1K
1K
0xFFFF A400
0xFFFF A7FF
1K
(1) In internal Flash Boot Mode, internal FLASH is aliased at 0x0000 0000h
(2) Only available in STR750Fx2
8K
SystemMemory
0x200C 0000
0x200C 1FFF
8K
B1F1
0x200C 2000
8K
USB RAM 256 x16-bit
Reserved
Reserved
0x9000 0000
0x9000 0013
SMI Registers
20B
B1F0
0x200C 3FFF
0x200C 4000
0xFFFF FFFF
0xFFFF FC00
0xFFFF FBFF
1K
Reserved
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
24/84
6 Electrical parameters
6.1 Parameter conditions
Unless otherwise specified, all voltages are referred to VSS.
6.1.1 Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TAmax (given by the selected
temperature range).
Data based on product characterisation, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3Σ).
6.1.2 Typical values
Unless otherwise specified, typical data are based on TA=25° C, VDD_IO=3.3 V (for the
3.0 VVDD_IO3.6 V voltage range) and V18=1.8 V. They are given only as design guidelines
and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean±2Σ).
6.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
25/84
6.1.4 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 6.
Figure 6. Pin loading conditions
6.1.5 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 7.
Figure 7. Pin input voltage
CL=50pF
STR7 PIN
VIN
STR7 PIN
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
26/84
6.1.6 Power supply schemes
When mentioned, some electrical parameters can refer to a dedicated power scheme
among the four possibilities. The four different power schemes are described below.
Power supply scheme 1: Single external 3.3 V power source
Figure 8. Power supply scheme 1
3.3V MAIN
VOLTAGE
GP I/Os
OUT
ADC
ADC
IN
KERNEL LOGIC
BACKUP
IN
V
18_BKP
(CPU &
DIGITAL &
+/-0.3V
V
IO
=3.3V
V
DD_ADC
V
SS_ADC
PLL
3.3V
3.3V
V
SS_PLL
V
SS_IO
V
DD_IO
V
18REG
V
DD_PLL
V
SS18
V
SS_BKP
OSC32K, RTC
REGULATOR
MEMORIES)
CIRCUITRY
WAKEUP LOGIC,
VREG_DIS
BACKUP REGISTERS)
I/O LOGIC
IN STANDBY MODE THIS BLOCK IS KEPT POWERED ON
NORMAL
POWER
SWITCH
MODE
V
18
10µF
33nF
1µF
1µF
LOW POWER
VOLTAGE
REGULATOR
V
BACKUP
V
CORE
V
18
V
LPVREG
~1.4V
V
MVREG
= 1.8V
V
SS18
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
27/84
Power supply scheme 2: Dual external 1.8V and 3.3V supply
Figure 9. Power supply scheme 2
3.3V
MAIN
VOLTAGE
GP I/Os
OUT
ADC
ADC
IN
IN
V
18_BKP
+/-0.3V
V
IO
=3.3V
V
DD_ADC
V
SS_ADC
PLL
3.3V
3.3V
V
SS_PLL
V
SS_IO
V
DD_IO
V
18REG
V
DD_PLL
V
SS_BKP
REGULATOR
VREG_DIS
OFF
1.8V
V
SS18
I/O LOGIC
OFF
KERNEL
BACKUP
(CORE &
DIGITAL &
(OSC32K, RTC
MEMORIES)
CIRCUITRY
WAKEUP LOGIC,
BACKUP REGISTERS)
V
DD_IO
POWER
SWITCH
V
CORE
V
BACKUP
V
18
LOW POWER
VOLTAGE
REGULATOR
NOTE : THE EXTERNAL 3.3 V POWER SUPPLY MUST ALWAYS BE KEPT ON
V
LPVREG
V
MVREG
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
28/84
Power supply scheme 3: Single external 5 V power source
Figure 10. Power supply scheme 3
5.0V MAIN
VOLTAGE
GP I/Os
OUT
ADC
ADC
IN
KERNEL LOGIC
BACKUP
IN
V
18_BKP
(CPU &
DIGITAL &
+/-0.5V
V
IO
=5.0V
V
DD_ADC
V
SS_ADC
PLL
5.0V
5.0V
V
SS_PLL
V
SS_IO
V
DD_IO
V
18REG
V
DD_PLL
V
SS18
V
SS_BKP
OSC32K, RTC
REGULATOR
MEMORIES)
CIRCUITRY
WAKEUP LOGIC,
VREG_DIS
BACKUP REGISTERS)
I/O LOGIC
IN STANDBY MODE THIS BLOCK IS KEPT POWER ED ON
NORMAL
POWER
SWITCH
MODE
V
18
10µF
33nF
1µF
1µF
LOW POWER
VOLTAGE
REGULATOR
V
BACKUP
V
CORE
V
18
V
LPVREG
~1.4V
V
MVREG
= 1.8V
V
SS18
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
29/84
Power supply scheme 4: Dual external 1.8 V and 5.0 V supply
Figure 11. Power supply scheme 4
6.1.7 I/O characteristics versus the various power schemes (3.3V or 5.0V)
Unless otherwise mentioned, all the I/O characteristics are valid for both
VDD_IO=3.0 V to 3.6 V with bit EN33=1
VDD_IO=4.5 V to 5.5 V with bit EN33=0
When VDD_IO=3.0 V to 3.6 V, I/Os are not 5V tolerant.
6.1.8 Current consumption measurements
All the current consumption measurements mentioned below refer to Power scheme 1 and 2
as described in Figure 12 and Figure 13
5.0V
MAIN
VOLTAGE
LOW POWER
VOLTAGE
GP I/Os
OUT
ADC
ADC
IN
IN
+/-0.5V
V
IO
=5.0V
V
DD_ADC
V
SS_ADC
PLL
5.0V
5.0V
V
SS_PLL
V
SS_IO
V
DD_IO
V
DD_PLL
REGULATOR
OFF
I/O LOGIC
OFF
KERNEL
BACKUP
(CORE &
DIGITAL &
(OSC32K, RTC
MEMORIES)
CIRCUITRY
WAKEUP LOGIC,
BACKUP REGISTERS)
POWER
SWITCH
V
CORE
V
BACKUP
V
18_BKP
V
18REG
V
SS_BKP
VREG_DIS
1.8V
V
SS18
V
DD_IO
V
18
REGULATOR
NOTE : THE EXTERNAL 5.0V POWER SUPPLY MUST ALWAYS BE KEPT ON
V
LPVREG
V
MVREG
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
30/84
Figure 12. Power consumption measurements in power scheme 1 (regulators
enabled)
Figure 13. Power consumption measurements in power scheme 2 (regulators
disabled)
VDD_IO pins
V18 pins (including V18BKP)
IDD
3.3V
Supply
ballast
regulator
transistor
3.3V
internal
load
1.8V
internal
load
IDD is measured, which corresponds to the total current consumption :
I33
I18
IDD = IDDA_PLL + IDDA_ADC + I33 + I18
VDDA_PLL pins
PLL
load
IDDA_PLL
ADC
load
IDDA_ADC
VDDA_ADC pins
VDD_IO pins
V18 pins (including V18BKP)
IDD_v33
3.3V
Supply
3.3V
internal
load
1.8V
internal
load
I33
I18
VDDA_PLL pins
PLL
load
IDDA_PLL
ADC
load
IDDA_ADC
VDDA_ADC pins
IDD_v18
1.8V
Supply
IDD_v33 and IDD_v18 are measured which correspond to:
IDD_v33 = IDDA_PLL + IDDA_ADC + I33
IDD_v18 = I18
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
31/84
Figure 14. Power consumption measurements in power scheme 3 (regulators
enabled)
Figure 15. Power consumption measurements in power scheme 4 (regulators
disabled)
VDD_IO pins
V18 pins (including V18BKP)
IDD
5.0V
Supply
ballast
regulator
transistor
5.0V
internal
load
1.8V
internal
load
IDD is measured, which corresponds to the total current consumption :
I50
I18
IDD = IDDA_PLL + IDDA_ADC + I50 + I18
VDDA_PLL pins
PLL
load
IDDA_PLL
ADC
load
IDDA_ADC
VDDA_ADC pins
VDD_IO pins
V18 pins (including V18BKP)
IDD_v50
5.0V
Supply
5.0V
internal
load
1.8V
internal
load
I50
I18
VDDA_PLL pins
PLL
load
IDDA_PLL
ADC
load
IDDA_ADC
VDDA_ADC pins
IDD_v18
1.8V
Supply
IDD_v50 and IDD_v18 are measured which correspond to:
IDD_v50= IDDA_PLL + IDDA_ADC + I50
IDD_v18 = I18
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
32/84
6.2 Absolute maximum ratings
Stresses above those listed as “absolute maximum ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
6.2.1 Voltage characteristics
Table 7. Voltage characteristics
Symbol Ratings Min Max Unit
VDD_x - VSS_X(1)
1. All 3.3 V or 5.0 V power (VDD_IO, VDDA_ADC, VDDA_PLL) and ground (VSS_IO, VSSA_ADC, VDDA_ADC) pins
must always be connected to the external 3.3V or 5.0V supply. When powered by 3.3V, I/Os are not 5V
tolerant.
Including VDDA_ADC and VDDA_PLL -0.3 6.5 V
V18 - VSS18
Digital 1.8 V Supply voltage on all V18
power pins (when 1.8 V is provided
externally)
-0.3 2.0
VIN Input voltage on any pin (2)
2. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum
cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive
injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads,
there is no positive injection current, and the corresponding VIN maximum must always be respected
VSS-0.3 to
VDD_IO+0.3
VSS-0.3 to
VDD_IO+0.3
|ΔVDDx|Variations between different 3.3 V or
5.0 V power pins 50
mV|ΔV18x|Variations between different 1.8 V power
pins(3)
3. Only when using external 1.8 V power supply. All the power (V18, V18REG, V18BKP) and ground (VSS18,
VSSBKP) pins must always be connected to the external 1.8 V supply.
25
|VSSX - VSS|Variations between all the different
ground pins 50
VESD(HBM)
Electro-static discharge voltage (Human
Body Model)
see : Absolute
maximum
ratings
(electrical
sensitivity) on
page 52
see : Absolute
maximum
ratings
(electrical
sensitivity) on
page 52
VESD(MM)
Electro-static discharge voltage (Machine
Model)
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
33/84
6.2.2 Current characteristics
6.2.3 Thermal characteristics
Table 8. Current characteristics
Symbol Ratings Maximum
value Unit
IVDD_IO(1)
1. The user can use GPIOs to source or sink high current (up to 20 mA for O8 type High Sink I/Os). In this
case, the user must ensure that these absolute max. values are not exceeded (taking into account the
RUN power consumption) and must follow the rules described in Section 6.3.8: I/O port pin characteristics
on page 54.
Total current into VDD_IO power lines (source) (2)
2. All 3.3 V or 5.0 V power (VDD_IO, VDDA_ADC, VDDA_PLL) and ground (VSS_IO, VSSA_ADC, VDDA_ADC) pins
must always be connected to the external 3.3V or 5.0V supply.
150
mA
IVSS_IO(1) Total current out of VSS ground lines (sink) (2) 150
IIO
Output current sunk by any I/O and control pin 25
Output current source by any I/Os and control pin - 25
IINJ(PIN) (3) & (4)
3. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum
cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive
injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. Data based on TA=25°C.
4. Negative injection disturbs the analog performance of the device. See note in Section 6.3.12: 10-bit ADC
characteristics on page 72.
Injected current on NRSTIN pin ± 5
Injected current on XT1 and XT2 pins ± 5
Injected current on any other pin (5)
5. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the
positive and negative injected currents (instantaneous values). These results are based on
characterization with ΣIINJ(PIN) maximum current injection on four I/O port pins of the device.
± 5
ΣIINJ(PIN)(3) Total injected current (sum of all I/O and control pins) (5) ± 25
Table 9. Thermal characteristics
Symbol Ratings Value Unit
TSTG Storage temperature range -65 to +150 °C
TJMaximum junction temperature 150 °C
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
34/84
6.3 Operating conditions
6.3.1 General operating conditions
Subject to general operating conditions for VDD_IO, and TA unless otherwise specified.
Table 10. General operating conditions
Symbol Parameter Conditions Min Max Unit
fHCLK Internal AHB Clock frequency
Accessing SRAM with 0 wait
states 0 64
MHz
Accessing Flash in burst
mode, TA85° C 060
Accessing Flash in burst
mode
TA>85° C
56
Accessing Flash with 0 wait
states 032
Write access to Flash
registers(1)
1. Write access to Flash registers is either a program, erase, set protection or un-set protection operation.
030
Accessing Flash in RWW
mode 016
fPCLK Internal APB Clock frequency 0 32 MHz
VDD_IO
Standard Operating Voltage
Power Scheme 1 & 2 3.0 3.6
V
Standard Operating Voltage
Power Scheme 3 & 4 4.5 5.5
V18
Standard Operating Voltage
Power Scheme 2 & 4 1.65 1.95
PD
Power dissipation at TA= 85° C
for suffix 6 or TA= 105° C for
suffix 7(2)
2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 7.2:
Thermal characteristics on page 79).
LQFP100 434
mW
LQFP64 444
LFBGA100 487
LFBGA64 344
TA
Ambient temperature for 6 suffix
version
Maximum power dissipation -40 85 °C
Low power dissipation(3)
3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Section 7.2: Thermal characteristics on page 79).
-40 105 °C
Ambient temperature for 7 suffix
version
Maximum power dissipation -40 105 °C
Low power dissipation (3) -40 125 °C
TJJunction temperature range 6 Suffix Version -40 105 °C
7 Suffix Version -40 125 °C
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
35/84
6.3.2 Operating conditions at power-up / power-down
Subject to general operating conditions for TA.
6.3.3 Embedded voltage regulators
Subject to general operating conditions for VDD_IO, and TA
Table 11. Operating conditions at power-up / power-down
Symbol Parameter Conditions Min(1)
1. Data guaranteed by characterization, not tested in production.
Typ Max(1) Unit
tVDD_IO VDD_IO rise time rate 20 μs/V
20 ms/V
tV18 V18 rise time rate (1) When 1.8 V power is supplied
externally
20 μs/V
20 ms/V
Table 12. Embedded voltage regulators
Symbol Parameter Conditions Min Typ Max Unit
VMVREG MVREG power supply(1)
1. VMVREG is observed on the V18, V18REG and V18BKP pins except in the following case:
- In STOP mode with MVREG OFF (LP_PARAM13 bit). See note 2.
- In STANDBY mode. See note 2.
load <150 mA 1.65 1.80 1.95 V
VLPVREG LPVREG power supply(2)
2. In STANDBY mode, VLPVREG is observed on the V18BKP pin
In STOP mode, VLPVREG is observed on the V18, V18REG and V18BKP pins.
load <10 mA 1.30 1.40 1.50 V
tVREG_PWRUP(1)
Voltage Regulators start-up
time (to reach 90% of final V18
value) at VDD_IO power-up(3)
3. Once VDD_IO has reached 3.0 V, the RSM (Regulator Startup Monitor) generates an internal RESET
during this start-up time.
VDD_IO rise
slope = 20 µs/V 80 µs
VDD_IO rise
slope = 20 ms/V 35 ms
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
36/84
6.3.4 Supply current characteristics
The current consumption is measured as described in Figure 12 on page 30 and Figure 13
on page 30.
Subject to general operating conditions for VDD_IO, and TA
Maximum power consumption
For the measurements in Ta b l e 1 3 and Ta bl e 1 4 , the MCU is placed under the following
conditions:
All I/O pins are configured in output push-pull 0
All peripherals are disabled except if explicitly mentioned.
Embedded Regulators are used to provide 1.8 V (except if explicitly mentioned).
Table 13. Maximum power consumption in RUN and WFI modes
Symbol Parameter Conditions(1)
1. The conditions for these consumption measurements are described at the beginning of Section 6.3.4.
Typ(2)
2. Typical data are based on TA=25°C, VDD_IO=3.3V or 5.0V and V18=1.8V unless otherwise specified.
Max (3)
3. Data based on product characterisation, tested in production at VDD_IO max and V18 max (1.95V in dual
supply mode or regulator output value in single supply mode) and TA max.
Unit
IDD
Supply current in
RUN mode
External Clock with PLL
multiplication, code running from
RAM, all peripherals enabled in the
MRCC_PLCKEN register: fHCLK=60
MHz, fPCLK=30 MHz
Single supply scheme see Figure 12
/ Figure 14
3.3V
and 5V
range
80 90 mA
Supply current in
WFI mode
External Clock, code running from
RAM: fHCLK=60 MHz, fPCLK=30 MHz
Single supply scheme see
Figure 12./ Figure 14
Parameter setting BURST=1,
WFI_FLASHEN=1
3.3V
and 5V
range
62 67 mA
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
37/84
Table 14. Maximum power consumption in STOP and STANDBY modes
Symbol Parameter Conditions(1) Typ(2)
Max(3)
Unit
TA
25°C
TA
85°C
TA
105°C
IDD
Supply
current in
STOP mode
LP_PARAM bits: ALL OFF(4)
Single supply scheme see Figure 12.
3.3V
range 12 16 117 250 μA
LP_PARAM bits: ALL OFF
Dual supply scheme see Figure 13.
IDD_V18
IDD_V33
5
<1
8
3
60
20
110
26 μA
LP_PARAM bits: ALL OFF(4)
Single supply scheme see Figure 10
5V
range 15 22 160 310 μA
LP_PARAM bits: ALL OFF
Dual supply scheme see Figure 11
IDD_V18
IDD_V50
5
3
8
6
60
50
110
65
μA
Supply
current in
STANDBY
mode
RTC OFF
3.3 V
range 10 20 25 28
5V
range 15 25 30 33
1. The conditions for these consumption measurements are described at the beginning of Section 6.3.4.
2. Typical data are based on TA=25°C, VDD_IO=3.3V or 5.0V and V18=1.8V unless otherwise specified.
3. Data based on product characterisation, tested in production at VDD_IO max and V18 max (1.95V in dual supply mode or
regulator output value in single supply mode).
4. In this mode, the whole digital circuitry is powered internally by the LPVREG at approximately 1.4V, which significantly
reduces the leakage currents.
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
38/84
Figure 16. Power consumption in STOP mode
in Single supply scheme (3.3 V
range)
Figure 17. Power consumption in STOP mode
Single supply scheme (5 V range)
0
50
100
150
200
250
300
-402545557595105
Te mp (°C)
IStop (uA)
TYP ( 3 .3 V)
MAX (3. 6V)
0
50
100
150
200
250
300
350
-40 25 45 55 75 95 105
Te mp (°C)
IStop (uA)
TYP ( 5 .0 V)
MAX (5.5V)
Figure 18. Power consumption in STANDBY
mode (3.3 V range)
Figure 19. Power consumption in STANDBY
mode (5 V range)
0
5
10
15
20
25
30
-40 25 105
Te mp (°C)
I S tandby (uA )
TYP (3.3V)
MAX (3.6V)
0
5
10
15
20
25
30
35
-40 25 105
Te mp ( °C )
I S tandby (uA )
TYP (5.0V)
MAX (5.5V)
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
39/84
Typical power consumption
The following measurement conditions apply to Ta b le 1 5 , Ta b l e 1 6 and Ta bl e 1 7 .
In RUN mode:
Program is executed from Flash (except if especially mentioned). The program consists
of an infinite loop. When fHCLK > 32 MHz, burst mode is activated.
A standard 4 MHz crystal source is used.
In all cases the PLL is used to multiply the frequency.
All measurements are done in the single supply scheme with internal regulators used
(see Figure 12)
In WFI Mode:
In WFI Mode the measurement conditions are similar to RUN mode (OSC4M and PLL
enabled). In addition, the Flash can be disabled depending on burst mode activation:
For AHB frequencies greater than 32 MHz, burst mode is activated and the Flash
is kept enabled by setting the WFI_FLASH_EN bit (this bit cannot be reset when
burst mode is activated).
For AHB frequencies less than or equal to 32 MHz, burst mode is deactivated,
WFI_FLASH_EN is reset and the LP_PARAM14 bit is set (Flash is disabled in WFI
mode).
In SLOW mode:
The same program as in RUN mode is executed from Flash. The CPU is clocked by the
FREEOSC, OSC4M, LPOSC or OSC32K. Only EXTIT peripheral is enabled in the
MRCC_PCLKEN register.
In SLOW-WFI mode:
In SLOW-WFI, the measurement conditions are similar to SLOW mode (CPU clocked
by a low frequency clock). In addition, the LP_PARAM14 bit is set (FLASH is OFF). The
WFI routine itself is executed from SRAM (it is not allowed to execute a WFI from the
internal FLASH)
In STOP mode:
Several measurements are given: in the single supply scheme with internal regulators
used (see Figure 12): and in the dual supply scheme (see Figure 13).
In STANDBY mode:
Three measurements are given:
The RTC is disabled, only the consumption of the LPVREG and RSM remain
(almost no leakage currents)
The RTC is running, clocked by a standard 32.768 kHz crystal.
The RTC is running, clocked by the internal Low Power RC oscillator (LPOSC)
STANDBY mode is only supported in the single supply scheme (see Figure 12)
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
40/84
Subject to general operating conditions for VDD_IO, and TA
Table 15. Single supply typical power consumption in Run, WFI, Slow and Slow-WFI modes
Symbol Para meter Conditions 3.3V
typ(1)
5V
typ(2) Unit
IDD(3)
Supply current in
RUN mode(4)
Clocked by OSC4M with PLL multiplication, all peripherals
enabled in the MRCC_PLCKEN register:
fHCLK=60 MHz, fPCLK=30 MHz
fHCLK=56 MHz, fPCLK=28 MHz
fHCLK=48 MHz, fPCLK=24 MHz
fHCLK=32 MHz, fPCLK=32 MHz
fHCLK=16 MHz, fPCLK=16 MHz
fHCLK=8 MHz, fPCLK=8 MHz
80
75
65
59
34
20
82
77
67
61
37
22
mA
Clocked by OSC4M with PLL multiplication, only EXTIT
peripheral enabled in the MRCC_PLCKEN register:
fHCLK=60 MHz, fPCLK=30 MHz
fHCLK=56 MHz, fPCLK=28 MHz
fHCLK=48 MHz, fPCLK=24 MHz
fHCLK=32 MHz, fPCLK=32 MHz
fHCLK=16 MHz, fPCLK=16 MHz
fHCLK=8 MHz, fPCLK=8 MHz
65
60
54
42
22
16
67
62
55
44
24
18
mA
Supply current in
WFI mode(4)
Clocked by OSC4M with PLL multiplication, only EXTIT
peripheral enabled in the MRCC_PLCKEN register:
fHCLK=60 MHz, fPCLK=30 MHz(5)
fHCLK=56 MHz, fPCLK=28 MHz(5)
fHCLK=48 MHz, fPCLK=24 MHz(5)
fHCLK=32 MHz, fPCLK=32 MHz(6)
fHCLK=16 MHz, fPCLK= 16 MHz (6)
fHCLK= 8 MHz, fPCLK= 8 MHz(6)
62
59
53
22
13
10
63
60
54
23
15
11
mA
Supply current in
SLOW mode(4)
Clocked by FREEOSC: fHCLK=fPCLK=~5 MHz,
Clocked by OSC4M: fHCLK=fPCLK=4 MHz
Clocked by LPOSC: fHCLK=fPCLK=~300 kHz
Clocked by OSC32K: fHCLK=fPCLK=32.768 kHz
9
8
3.65
3.5
10
9
3.9
4.2
mA
Supply current in
SLOW-WFI
mode(4)(7)
Clocked by FREEOSC: fHCLK=fPCLK=~5 MHz
Clocked by OSC4M: fHCLK=fPCLK=4 MHz
Clocked by LPOSC: fHCLK=fPCLK=~300 kHz
Clocked by OSC32K: fHCLK=fPCLK=32.768 kHz
3.5
3.1
1.15
0.98
4.0
3.75
1.65
1.5
mA
1. Typical data based on TA=25° C and VDD_IO=3.3V.
2. Typical data based on TA=25° C and VDD_IO=5.0V.
3. The conditions for these consumption measurements are described at the beginning of Section 6.3.4 on page 36.
4. Single supply scheme see Figure 14.
5. Parameter setting BURST=1, WFI_FLASHEN=1
6. Parameter setting BURST=0, WFI_FLASHEN=0
7. Parameter setting WFI_FLASHEN=0, OSC4MOFF=1
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
41/84
Subject to general operating conditions for VDD_IO, and TA
Table 16. Dual supply supply typical power consumption in Run, WFI, Slow and
Slow-WFI modes
To calculate the power consumption in Dual supply mode, refer to the values given in Ta bl e 1 5 . and
consider that this consumption is split as follows:
IDD(single supply)~IDD(dual supply)= IDD_V18 + IDD(VDD_IO)
For 3.3V range: IDD(VDD_IO) ~ 1 to 2 mA
For 5V range: IDD(VDD_IO) ~ 2 to 3 mA
Therefore most of the consumption is sunk on the V18 power supply
This formula does not apply in STOP and STANDBY modes, refer to Ta b l e 1 7 .
Table 17. Typical power consumption in STOP and STANDBY modes
Symbol Parameter Conditions 3.3V
Typ(1)
5V
Typ(2) Unit
IDD(3)
Supply current
in STOP
mode(4)
LP_PARAM bits: ALL OFF(5) 12 15
μA
LP_PARAM bits : MVREG ON, OSC4M OFF, FLASH
OFF(6) 130 135
LP_PARAM bits: MVREG ON, OSC4M ON , FLASH
OFF(6) 1950 1930
LP_PARAM bits: MVREG ON, OSC4M OFF, FLASH ON (6) 630 635
LP_PARAM bits: MVREG ON, OSC4M ON, FLASH ON (6) 2435 2425
Supply current
in STOP
mode(7)
LPPARAM bits: ALL OFF, with V18=1.8 V IDD_V18
IDD_V33
5
<1
5
<1
μA
LP_PARAM bits: OSC4M ON, FLASH OFF IDD_V18
IDD_V33
410
1475
410
1435
LP_PARAM bits: OSC4M OFF, FLASH ON IDD_V18
IDD_V33
550
<1
550
1
LP_PARAM bits: OSC4M ON, FLASH ON IDD_V18
IDD_V33
910
1475
910
1445
Supply current
in STANDBY
mode(4)
RTC OFF 11 14
μA
RTC ON clocked by OSC32K 14 18
1. Typical data are based on TA=25°C, VDD_IO=3.3 V and V18=1.8 V unless otherwise indicated in the table.
2. Typical data are based on TA=25°C, VDD_IO=5.0 V and V18=1.8 V unless otherwise indicated in the table.
3. The conditions for these consumption measurements are described at the beginning of Section 6.3.4 on page 36.
4. Single supply scheme see Figure 12.
5. In this mode, the whole digital circuitry is powered internally by the LPVREG at approximately 1.4 V, which significantly
reduces the leakage currents.
6. In this mode, the whole digital circuitry is powered internally by the MVREG at 1.8 V.
7. Dual supply scheme see Figure 13.
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
42/84
Supply and clock manager power consumption
Table 18. Supply and clock manager power consumption
Symbol Parameter Conditions(1) 3.3V
Typ
5V
Typ Unit
IDD(OSC4M)
Supply current of resonator oscillator
in STOP or WFI mode (LP_PARAM
bit: OSC4M ON)
External components specified in:
4/8 MHz crystal / ceramic resonator
oscillator (XT1/XT2) on page 46
1815 1795
μA
IDD(FLASH)
FLASH static current consumption in
STOP or WFI mode (LP_PARAM bit
FLASH ON)
515 515
IDD(MVREG)
Main Voltage Regulator static current
consumption in STOP mode
(LP_PARAM bit: MVREG ON)
130 135
IDD(LPVREG)
Low Power Voltage Regulator + RSM
current static current consumption
STOP mode includes leakage
where V18 is internally set to 1.4 V 12 15
STANDBY mode where
V18BKP and V18 are internally set to
1.4 V and 0 V respectively
11 14
1. Measurements performed in 3.3V single supply mode see Figure 12
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
43/84
On-Chip peripheral power consumption
Conditions:
–V
DD_IO=VDDA_ADC=VDDA_PLL=3.3 V or 5 V ±10% unless otherwise specified.
–T
A= 25° C
Clocked by OSC4M with PLL multiplication, fCK_SYS=64 MHz, fHCLK=32 MHz,
fPCLK=32 MHz
.
Table 19. On-Chip peripherals
Symbol Parameter Typ
(3.3V and 5.0V) Unit
IDD(TIM) TIM Timer supply current (1)
1. Data based on a differential IDD measurement between reset configuration and timer counter running at 32
MHz. No IC/OC programmed (no I/O pads toggling)
0.7
mA
IDD(PWM) PWM Timer supply current(2)
2. Data based on a differential IDD measurement between reset configuration and PWM running at 32 MHz.
This measurement does not include PWM pads toggling consumption.
1
IDD(SSP) SSP supply current (3)
3. Data based on a differential IDD measurement between reset configuration and permanent SPI master
communication at maximum speed 16 MHz. The data sent is 55h. This measurement does not include the
pad toggling consumption.
1.3
IDD(UART) UART supply current (4)
4. Data based on a differential IDD measurement between reset configuration and a permanent UART data
transmit sequence at 1Mbauds. This measurement does not include the pad toggling consumption.
1.6
IDD(I2C) I2C supply current (5)
5. Data based on a differential IDD measurement between reset configuration (I2C disabled) and a permanent
I2C master communication at 100kHz (data sent equal to 55h). This measurement includes the pad
toggling consumption but not the external 10kOhm external pull-up on clock and data lines.
0.3
IDD(ADC) ADC supply current when converting (6)
6. Data based on a differential IDD measurement between reset configuration and continuous A/D
conversions at 8 MHz in scan mode on 16 inputs configured as AIN.
1.2
IDD(USB)
USB supply current (7)
Note: VDD_IO must be 3.3 V ±10%
7. Data based on a differential IDD measurement between reset configuration and a running generic HID
application.
0.90
IDD(CAN) CAN supply current (8)
8. Data based on a differential IDD measurement between reset configuration (CAN disabled) and a
permanent CAN data transmit sequence in loopback mode at 1MHz. This measurement does not include
the pad toggling consumption.
2.8
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
44/84
6.3.5 Clock and timing characteristics
XT1 external clock source
Subject to general operating conditions for VDD_IO, and TA.
Table 20. XT1 external clock source
Symbol Parameter Conditions(1) (2)
1. Data based on typical application software.
2. Time measured between interrupt event and interrupt vector fetch. Δtc(INST) is the number of tCPU cycles
needed to finish the current instruction execution.
Min Typ Max Unit
fXT1
External clock source
frequency
see Figure 20
460MHz
VXT1H
XT1 input pin high level
voltage 0.7xVDD_IO VDD_IO
V
VXT1L
XT1 input pin low level
voltage VSS 0.3xVDD_IO
tw(XT1H)
tw(XT1L)
XT1 high or low time (3)
3. Data based on design simulation and/or technology characteristics, not tested in production.
6
ns
tr(XT1)
tf(XT1)
XT1 rise or fall time (3) 20
ILXTx Input leakage current VSS VIN
VDD_IO
±1 μA
CIN(XT1) XT1 input capacitance(3) 5pF
DuCy(XT1) Duty cycle 45 55 %
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
45/84
XRTC1 external clock source
Subject to general operating conditions for VDD_IO, and TA.
Figure 20. Typical application with an external clock source
Table 21. XRTC1 external clock source
Symbol Parameter Conditions(1)
1. Data based on typical application software.
Min Typ Max Unit
fXRTC1
External clock source
frequency
see Figure 20
32.768 500 kHz
VXRTC1H
XRTC1 input pin high
level voltage 0.7xVDD_IO VDD_IO
V
VXRTC1L
XRTC1 input pin low
level voltage VSS 0.3xVDD_IO
tw(XRTC1H)
tw(XRTC1L)
XRTC1 high or low
time(2)
2. Data based on design simulation and/or technology characteristics, not tested in production.
900
ns
tr(XRTC1)
tf(XRTC1)
XRTC1 rise or fall time(2) 50
IL
XRTCx Input leakage
current
VSSVINVDD_I
O
±1 μA
CIN(RTC1)
XRTC1 input
capacitance(2) 5pF
DuCy(RTC1) Duty cycle 30 70 %
XT1
XT2 fOSC4M
EXTERNAL
STR750
CLOCK SOURCE
VXT1L
VXT1H
tr(XT1) tf(XT1) tw(XT1H) tw(XT1L)
IL
90%
10%
TXT1
hi-Z
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
46/84
4/8 MHz crystal / ceramic resonator oscillator (XT1/XT2)
The STR750 system clock or the input of the PLL can be supplied by a OSC4M which is a 4
MHz clock generated from a 4 MHz or 8 MHz crystal or ceramic resonator. If using an 8 MHz
oscillator, software set the XTDIV bit to enable a divider by 2 and generate a 4 MHz OSC4M
clock. All the information given in this paragraph are based on product characterisation with
specified typical external components. In the application, the resonator and the load
capacitors have to be placed as close as possible to the oscillator pins in order to minimize
output distortion and start-up stabilization time. Refer to the crystal/ceramic resonator
manufacturer for more details (frequency, package, accuracy...).
Figure 21. Typical application with a 4 or 8 MHz crystal or ceramic resonator
Table 22. 4/8 MHz crystal / ceramic resonator oscillator (XT1/XT2)(1)
Symbol Parameter Conditions Min Typ Max Unit
fOSC4M Oscillator frequency
4 MHz Crystal/Resonator Oscillator
connected on XT1/XT2 XTDIV=0
or
8 MHz Crystal/Resonator Oscillator
connected on XT1/XT2 XTDIV=1
4MHz
RFFeedback resistor 200 240 270 kΩ
CL1(2)
CL2
Recommended load
capacitance versus equivalent
serial resistance of the crystal or
ceramic resonator (RS)(3)
RS=200Ω60 pF
i2XT2 driving current VDD_IO=3.3 V or 5.0 V 425 μA
tSU(OSC4M)(4) Startup time at VDD_IO power-up 1 ms
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. For CL1 and CL2 it is recommended to use high-quality ceramic capacitors in the 5-pF to 25-pF range (typ.) designed for
high-frequency applications and selected to match the requirements of the crystal or resonator. CL1 and CL2, are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of CL1 and CL2.
PCB and MCU pin capacitance must be included when sizing CL1 and CL2 (10 pF can be used as a rough estimate of the
combined pin and board capacitance).
3. The relatively low value of the RF resistor offers a good protection against issues resulting from use in a humid
environment, due to the induced leakage and the bias condition change. However, it is recommended to take this point into
account if the MCU is used in tough humidity conditions.
4. tSU(OSC4M) is the typical start-up time measured from the moment VDD_IO is powered (with a quick VDD_IO ramp-up from 0
to 3.3V (<50μs) to a stabilized 4MHz oscillation is reached. This value is measured for a standard crystal resonator and it
can vary significantly with the crystal/ceramic resonator manufacturer.
XT2
XT1
fOSC4M
CL1
CL2
i2
RF
STR75X
RESONATOR
WHEN RESONATOR WITH
INTEGRATED CAPACITORS
VDD/2
Ref
FEEDBACK
LOOP
LINEAR
AMPLIFIER
XTDIV
/2
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
47/84
OSC32K crystal / ceramic resonator oscillator
The STR7 RTC clock can be supplied with a 32.768 kHz Crystal/Ceramic resonator
oscillator. All the information given in this paragraph are based on product characterisation
with specified typical external components. In the application, the resonator and the load
capacitors have to be placed as close as possible to the oscillator pins in order to minimize
output distortion and start-up stabilization time. Refer to the crystal/ceramic resonator
manufacturer for more details (frequency, package, accuracy...).
Figure 22. Typical application with a 32.768 kHz crystal or ceramic resonator
PLL characteristics
PLL Jitter Terminology
Self-referred single period jitter (period jitter)
Period Jitter is defined as the difference of the maximum period (Tmax) and minimum
period (Tmin) at the output of the PLL where Tmax is the maximum time difference
between 2 consecutive clock rising edges and Tmin is the minimum time difference
between 2 consecutive clock rising edges.
See Figure 23
Self-referred long term jitter (N period jitter)
Self-referred long term Jitter is defined as the difference of the maximum period (Tmax)
and minimum period (Tmin) at the output of the PLL where Tmax is the maximum time
Table 23. OSC32K crystal / ceramic resonator oscillator
Symbol Parameter Conditions Min Typ Max Unit
fOSC32K Oscillator Frequency 32.768 kHz
RFFeedback resistor VDD_IO=3.3 V or 5.0 V 270 310 370 kΩ
CL1
CL2
Recommended load capacitance
versus equivalent serial resistance of
the crystal or ceramic resonator (RS)(1)
RS=40KΩ12.5 15 pF
i2XT2 driving current VDD_IO=3.3 V or 5.0 V
VIN=VSS
15μA
tSU(OSC32K)(2) Startup time VDD_IO is stabilized 2.5 s
1. The oscillator selection can be optimized in terms of supply current using an high quality resonator with small RS value.
Refer to crystal/ceramic resonator manufacturer for more details
2. tSU(OSC32K) is the start-up time measured from the moment it is enabled (by software) to a stabilized 32 kHz oscillation is
reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal/ceramic
resonator manufacturer
XRTC2
XRTC1 fOSC32K
CL1
CL2
i2
RF
STR750
32 kHz
WHEN RESONATOR WITH
INTEGRATED CAPACITORS
RESONATOR
FEEDBACK
LOOP
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
48/84
difference between N+1 consecutive clock rising edges and Tmin is the minimum time
difference between N+1 consecutive clock rising edges.
N should be kept sufficiently large to have a long term jitter (ex: thousands).
For N=1, this becomes the single period jitter.
See Figure 23
Cycle-to-cycle jitter (N period jitter)
This corresponds to the time variation between adjacent cycles over a random sample
of adjacent clock cycles pairs. Jitter(cycle-to-cycle) = Max(Tcycle n- Tcycle n-1) for n=1
to N.
See Figure 24
Figure 23. Self-referred jitter (single and long term)
Figure 24. Cycle-to-cycle jitter
IDEAL
CK_PLL
trigger point
ACTUAL
CK_PLL
nn+1 n+N
---
long term
jitter
T
single period
jitter
IDEAL
CK_PLL
ACTUAL
CK_PLL
nn+1
T
Tcycle 1 Tcycle 2
n+2 ---
Tcycle N-1
n+N
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
49/84
PLL characteristics
Subject to general operating conditions for VDD_IO, and TA.
Internal RC oscillators (FREEOSC & LPOSC)
Subject to general operating conditions for VDD_IO, and TA.
Table 24. PLL characteristics
Symbol Parameter Test Conditions
Value
Unit
Min Typ Max(1)
1. Data based on product characterisation, not tested in production.
fPLL_IN
PLL input clock 4.0 MHz
PLL input clock duty cycle 40 60 %
fPLL_OUT PLL multiplier output clock fPLL_INx 24 165 MHz
fVCO VCO frequency range When PLL
operates (locked) 336 960 MHz
tLOCK PLL lock time 300 μs
ΔtJITTER1(2)(3)
2. Refer to jitter terminology in : PLL characteristics on page 47 for details on how jitter is specified.
3. The jitter specification holds true only up to 50mV (peak-to-peak) noise on VDDA_PLL and V18 supplies.
Jitter will increase if the noise is more than 50mV. In addition, it assumes that the input clock has no jitter.
Single period jitter (+/-3Σ peak
to peak)
fPLL_IN = 4 MHz(4)
VDD_IO is stable
4. The PLL parameters (MX1, MX0, PRESC1, PRESC2) must respect the constraints described in: PLL
characteristics on page 47.
+/-250 ps
ΔtJITTER2(2)(3) Long term jitter (+/-3Σ peak to
peak)
fPLL_IN = 4 MHz(4)
VDD_IO is stable +/-2.5 ns
ΔtJITTER3(2)(3) Cycle to cycle jitter (+/-3Σ peak
to peak)
fPLL_IN = 4 MHz(4)
VDD_IO is stable +/-500 ps
Table 25. Internal RC oscillators (FREEOSC & LPOSC)
Symbol Parameter Conditions Min Typ Max Unit
fCK_FREEOSC FREEOSC Oscillator Frequency 3 5 8 MHz
fCK_LPOSC LPOSC Oscillator Frequency 150 300 500 kHz
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
50/84
6.3.6 Memory characteristics
Flash memory
Subject to general operating conditions for VDD_IO and V18, TA = -40 to 105 °C unless
otherwise specified.
Table 26. Flash memory characteristics
Symbol Parameter Test Conditions
Value
Unit
Typ Max(1)
1. Data based on characterisation not tested in production
tPW Word Program 35 μs
tPDW Double Word Program 60 μs
tPB0 Bank 0 Program (256K) Single Word programming of
a checker-board pattern 24.9
(2)
2. 10K program/erase cycles.
s
tPB1 Bank 1 Program (16K) Single Word programming of
a checker-board pattern 125 224(2) ms
tES Sector Erase (64K) Not preprogrammed (all 1)
Preprogrammed (all 0)
1.54
1.176
2.94(2)
2.38(2) s
tES Sector Erase (8K) Not preprogrammed (all 1)
Preprogrammed (all 0)
392
343
560(2)
532(2) ms
tES Bank 0 Erase (256K) Not preprogrammed (all 1)
Preprogrammed (all 0)
8.0
6.6
13.7
11.2 s
tES Bank 1 Erase (16K) Not preprogrammed (all 1)
Preprogrammed (all 0)
0.9
0.8
1.5
1.3 s
tRPD Recovery when disabled 20 μs
tPSL Program Suspend Latency 10 μs
tESL Erase Suspend Latency 300 μs
Table 27. Flash memory endurance and data retention
Symbol Parameter Conditions
Value
Unit
Min(1)
1. Data based on characterisation not tested in production.
Typ Max
NEND_B0 Endurance (Bank 0 sectors) 10 kcycles
NEND_B1 Endurance (Bank 1 sectors) 100 kcycles
YRET Data Retention TA=85° C 20 Years
tESR Erase Suspend Rate
Min time from Erase
Resume to next Erase
Suspend
20 ms
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
51/84
6.3.7 EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electro magnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by the
LEDs).
ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100pF capacitor, until a functional disturbance occurs. This test
conforms with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behaviour is detected, the software can be
hardened to prevent unrecoverable errors occurring (see application note AN1015).
Table 28. EMC characteristics
Symbol Parameter Conditions Level/
Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
VDD_IO=3.3 V or 5 V,
TA=+25° C, fCK_SYS=32 MHz
conforms to IEC 1000-4-2
Class A
VEFTB
Fast transient voltage burst limits to be applied
through 100pF on VDD and VSS pins to induce
a functional disturbance
VDD_IO=3.3 V or 5 V,
TA=+25° C, fCK_SYS=32 MHz
conforms to IEC 1000-4-4
Class A
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
52/84
Electro magnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electro-Static discharge (ESD)
Electro-Static Discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: Human Body Model and Machine Model. This test conforms to the
JESD22-A114A/A115A standard.
Table 29. EMI characteristics
Symbo
lParameter Conditions Monitored
Frequency Band
Max vs. [fOSC4M/fHCLK]
Unit
4/32MHz 4/60MHz
SEMI Peak level
Flash devices:
VDD_IO=3.3 V or 5 V,
TA=+25° C,
LQFP64 package
conforming to SAE J
1752/3
0.1 MHz to 30 MHz 22 26
dBμV30 MHz to 130 MHz 31 26
130 MHz to 1 GHz 19 23
SAE EMI Level >4 >4 -
Table 30. Absolute maximum ratings
Symbol Ratings Conditions Maximum
value(1)
1. Data based on product characterisation, not tested in production.
Unit
VESD(HBM)
Electro-static discharge voltage
(Human Body Model)
TA=+25° C
2000
VVESD(MM)
Electro-static discharge voltage
(Machine Model) 200
VESD(CDM)
Electro-static discharge voltage
(Charge Device Model) 750
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
53/84
Static and dynamic latch-up
LU: 3 complementary static tests are required on 10 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
DLU: Electro-Static Discharges (one positive then one negative test) are applied to
each pin of 3 samples when the micro is running to assess the latch-up performance in
dynamic mode. Power supplies are set to the typical values, the oscillator is connected
as near as possible to the pins of the micro and the component is put in reset mode.
This test conforms to the IEC1000-4-2 and SAEJ1752/3 standards. For more details,
refer to the application note AN1181.
Table 31. Electrical sensitivities
Symbol Parameter Conditions Class(1)
1. Class description: A Class is an STMicroelectronics internal specification. All its limits are higher than the
JEDEC specifications, that means when a device belongs to Class A it exceeds the JEDEC standard. B
Class strictly covers all the JEDEC criteria (international standard).
LU Static latch-up class
TA=+25° C
TA=+85° C
TA=+105° C
Class A
DLU Dynamic latch-up class VDD= 5.5 V, fOSC4M=4 MHz,
fCK_SYS=32 MHz, TA=+25° C Class A
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
54/84
6.3.8 I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD_IO and TA unless otherwise specified.
Table 32. General characteristics
I/O static characteristics
Symbol Parameter Conditions Min Typ Max Unit
VIL Input low level voltage
TTL ports
0.8 V
VIH Input high level voltage 2
Vhys
Schmitt trigger voltage
hysteresis(1)
1. Hysteresis voltage between Schmitt trigger switching levels.
400 mV
IINJ(PIN) Injected Current on any I/O pin ± 4
mA
ΣIINJ(PIN
(2)
2. When the current limitation is not possible, the VIN absolute maximum rating must be respected, otherwise
refer to IINJ(PIN) specification. A positive injection is induced by VIN>VDD_IO while a negative injection is
induced by VIN<VSS. Refer to Section 6.2 on page 32 for more details.
Total injected current (sum of all
I/O and control pins) ± 25
Ilkg
Input leakage current on robust
pins See Section 6.3.12 on page 72
Input leakage current(3)
3. Leakage could be higher than max. if negative current is injected on adjacent pins.
VSSVINVDD_IO ±1
μA
ISStatic current consumption(4)
4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of
the I/O for example or an external pull-up or pull-down resistor (see Figure 25). Data based on design
simulation and/or technology characteristics, not tested in production.
Floating input mode 200
RPU
Weak pull-up equivalent
resistor(5)
5. The RPU pull-up and RPD pull-down equivalent resistor are based on a resistive transistor.
VIN=VSS
VDD_IO=3.3 V 50 95 200 kΩ
VDD_IO=5 V 20 58 150 kΩ
RPD
Weak pull-down equivalent
resistor(5) VIN=VDD_IO
VDD_IO=3.3 V 25 80 180 kΩ
VDD_IO=5 V 20 50 120 kΩ
CIO I/O pin capacitance 5 pF
tw(IT)in
External interrupt/wake-up lines
pulse time(6)
6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured
as an external interrupt source.
2TAP
B
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
55/84
Figure 25. Connecting unused I/O pins
Output driving current
The GP I/Os have different drive capabilities:
O2 outputs can sink or source up to +/-2 mA.
O4 outputs can sink or source up to +/-4 mA.
outputs can sink or source up to +/-8 mA or can sink +20 mA (with a relaxed VOL).
In the application, the user must limit the number of I/O pins which can drive current to
respect the absolute maximum rating specified in Section 6.2.2 :
The sum of the current sourced by all the I/Os on VDD_IO, plus the maximum RUN
consumption of the MCU sourced on VDD_IO, can not exceed the absolute maximum
rating IVDD_IO.
The sum of the current sunk by all the I/Os on VSS_IO plus the maximum RUN
consumption of the MCU sunk on VSS_IO can not exceed the absolute maximum rating
IVSS_IO.
Subject to general operating conditions for VDD_IO and TA unless otherwise specified.
10kΩUNUSED I/O PORT
STR7XXX
10kΩUNUSED I/O PORT
STR7XXX
VDD
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
56/84
Table 33. Output driving current
I/O Output drive characteristics for
VDD_IO = 3.0 to 3.6 V and EN33 bit =1
or VDD_IO = 4.5 to 5.5 V and EN33 bit =0
I/O
Type Symbol Parameter Conditions Min Max Unit
O2
VOL(1)
1. The IIO current sunk must always respect the absolute maximum rating specified in Section 6.2.2 and the
sum of IIO (I/O ports and control pins) must not exceed IVSS_IO.
Output low level voltage for a standard
I/O pin when 8 pins are sunk at same
time
IIO=+2 mA 0.4
V
VOH(2)
2. The IIO current sourced must always respect the absolute maximum rating specified in Section 6.2.2 and
the sum of IIO (I/O ports and control pins) must not exceed IVDD_IO.
Output high level voltage for an I/O pin
when 4 pins are sourced at same time IIO=-2 mA VDD_IO-0.8
O4
VOL(1)
Output low level voltage for a standard
I/O pin when 8 pins are sunk at same
time
IIO=+4 mA 0.4
VOH(2) Output high level voltage for an I/O pin
when 4 pins are sourced at same time IIO=-4 mA VDD_IO-0.8
O8
VOL(1)
Output low level voltage for a standard
I/O pin when 8 pins are sunk at same
time
IIO=+8 mA 0.4
Output low level voltage for a high sink
I/O pin when 4 pins are sunk at same
time
IIO=+20 mA,
TA85°C
TA85°C
1.3
1.5
IIO=+8 mA 0.4
VOH(2) Output high level voltage for an I/O pin
when 4 pins are sourced at same time IIO=-8 mA VDD_IO-0.8
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
57/84
Output speed
Subject to general operating conditions for VDD_IO and TA unless otherwise specified.
Figure 26. I/O output speed definition
Table 34. Output speed
I/O dynamic characteristics for
VDD_IO = 3.0 to 3.6V and EN33 bit =1
or VDD_IO = 4.5 to 5.5V and EN33 bit =0
I/O
Type Symbol Parameter Conditions Min Typ Max Unit
O2
fmax(IO)out Maximum Frequency(1)
1. The maximum frequency is defined as described in Figure 26.
CL=50 pF 10 MHz
tf(IO)out
Output high to low level fall
time(2)
2. Data based on product characterisation, not tested in production.
CL=50 pF
Between 10% and 90%
30
ns
tr(IO)out
Output low to high level rise
time(2) 33
O4
fmax(IO)out Maximum Frequency(1) CL=50 pF 25 MHz
tf(IO)out
Output high to low level fall
time(2) CL=50 pF
Between 10% and 90%
12
ns
tr(IO)out
Output low to high level rise
time(2) 14
O8
fmax(IO)out Maximum Frequency(1) CL=50pF 40 MHz
tf(IO)out
Output high to low level fall
time(2) CL=50 pF
Between 10% and 90%
6
ns
tr(IO)out
Output low to high level rise
time(2) 6
10%
T
90%
50%
tr(IO)out
OUTPUT
EXTERNAL
ON 50pF
Maximum frequency is achieved if (tr + tf) (2/ 3)T and if the duty cycle is (45-55%)
10%
50%
90%
tr(IO)out
when loaded by 50pF
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
58/84
NRSTIN and NRSTOUT pins
NRSTIN Pin Input Driver is TTL/LVTTL as for all GP I/Os. A permanent pull-up is present
which is the same as RPU (see : General characteristics on page 54)
NRSTOUT Pin Output Driver is equivalent to the O2 type driver except that it works only as
an open-drain (the P-MOS is de-activated). A permanent pull-up is present which is the
same as RPU (see : General characteristics on page 54)
Subject to general operating conditions for VDD_IO and TA unless otherwise specified.
Table 35. NRSTIN and NRSTOUT pins
Symbol Parameter Conditions Min Typ 1) Max Unit
VIL(NRSTIN)
NRSTIN Input low level
voltage(1)
1. Data based on product characterisation, not tested in production.
0.8
V
VIH(NRSTIN)
NRSTIN Input high level
voltage(1) 2
Vhys(NRSTIN)
NRSTIN Schmitt trigger
voltage hysteresis(2)
2. Hysteresis voltage between Schmitt trigger switching levels.
400 mV
VOL(NRSTIN)
NRSTOUT Output low level
voltage(3)
3. The IIO current sunk must always respect the absolute maximum rating specified in Section 6.2.2 and the
sum of IIO (I/O ports and control pins) must not exceed IVSS.
IIO=+2 mA 0.4 V
RPU(NRSTIN)
NRSTIN Weak pull-up
equivalent resistor(4)
4. The RPU pull-up equivalent resistor are based on a resistive transistor
VIN=VSS
VDD_IO=3.3 V 25 50 100 kΩ
VDD_IO=5 V 20 31 100 kΩ
tw(RSTL)out
Generated reset pulse
duration (visible at NRSTOUT
pin)(5)
5. To guarantee the reset of the device, a minimum pulse of 15 µs has to be applied to the internal reset. At
VDD_IO power-up, the built-in reset stretcher may not generate the 15 µs pulse duration while once VDD_IO
is established, an external reset pulse will be internally stretched up to 15 µs thanks to the reset pulse
stretcher.
Internal reset source 15 20 μs
th(RSTL)in
External reset pulse hold time
at NRSTIN pin(6)
6. The reset network (the resistor and two capacitors) protects the device against parasitic resets, especially
in noisy environments.
At VDD_IO power-up(5) 20 μs
When VDD_IO is
established(5) 1μs
tg(RSTL)in
maximum negative spike
duration filtered at NRSTIN
pin(7)
7. In fact the filter is made to ignore all incoming pulses with short duration:
- all negative spikes with a duration less than 150 ns are filtered
- all trains of negative spikes with a ratio of 1/2 are filtered. This means that all spikes with a maximum
duration of 150 ns with minimum interval between spikes of 75 ns are filtered.
Data guaranteed by design, not tested in production.
The time between two
spikes must be higher
than 1/2 of the spike
duration.
150 ns
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
59/84
Figure 27. Recommended NRSTIN pin protection
1. The user must ensure that the level on the NRSTIN pin can go below the VIL(NRSTIN) max. level specified in
NRSTIN and NRSTOUT pins on page 58. Otherwise the reset will not be taken into account internally.
0.01μF
EXTERNAL
RESET
CIRCUIT
NRSTIN
STR7X
PULSE
GENERATOR
Filter
RPU
VDD_IO
WATCHDOG RESET
INTERNAL RESET
NRSTOUT
RSM RESET
SOFTWARE RESET
VDD_IO
Filter
TO RESET
OTHER CH I PS
RPU
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
60/84
6.3.9 TB and TIM timer characteristics
Subject to general operating conditions for VDD_IO, fCK_SYS, and TA unless otherwise
specified.
Refer to Section 6.3.8: I/O port pin characteristics on page 54 for more details on the
input/output alternate function characteristics (output compare, input capture, external clock,
PWM output...).
Table 36. TB and TIM timers
Symbol Parameter Conditions Min Typ Max Unit
tw(ICAP)in
Input capture
pulse time TIM0,1,2 2 tCK_TIM
tres(TIM)
Timer
resolution
time(1)
1. Take into account the frequency limitation due to the I/O speed capability when outputting the PWM to I/O
pin, described in : Output speed on page 57.
TB
fCK_TIM(MAX) = fCK_SYS 1t
CK_TIM
fCK_TIM = fCK_SYS =
60 MHz 16.6(1) ns
TIM0,1,2
fCK_TIM(MAX) = fCK_SYS 1t
CK_TIM
fCK_TIM = fCK_SYS =
60MHz 16.6(1) ns
fEXT
Timer
external clock
frequency on
TI1 or TI2
TIM0,1,2
fCK_TIM(MAX) = fCK_SYS 0f
CK_TIM/4 MHz
fCK_TIM = fCK_SYS =
60 MHz 015MHz
ResTIM
Timer
resolution 16 bit
tCOUNTER
16-bit
Counter clock
period when
internal clock
is selected
(16-bit
Prescaler)
TB
1 65536 tCK_TIM
fCK_TIM = fCK_SYS =
60 MHz 0.0166 1092 µs
TIM0,1,2
1 65536 tCK_TIM
fCK_TIM = fCK_SYS =
60 MHz 0.0166 1092 µs
tMAX_COUNT
Maximum
Possible
Count
TB
65536x65536 tCK_TIM
fCK_TIM = fCK_SYS =
60 MHz 71.58 s
TIM0,1,2
65536x65536 tCK_TIM
fCK_TIM = fCK_SYS =
60 MHz 71.58 s
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
61/84
Table 37. PWM Timer (PWM)
Symbol Parameter Conditions Min Typ Max Unit
tres(PWM) PWM resolution time
fCK_TIM(MAX) = fCK_SYS 1t
CK_TIM
fCK_TIM = fCK_SYS =
60 MHz 16.6(1) ns
ResPWM PWM resolution 16 bit
VOS(1)
1. Take into account the frequency limitation due to the I/O speed capability when outputting the PWM to an
I/O pin, as described in : Output speed on page 57.
PWM/DAC output step
voltage
VDD_IO=3.3 V, Res=16-bits 50(1) µV
VDD_IO=5.0 V, Res=16-bits 76(1) µV
tCOUNTER
Timer clock period
when internal clock is
selected
1 65536 tCK_TIM
fCK_TIM=60 MHz 0.0166 1087 µs
tMAX_COUNT
Maximum Possible
Count
65536x
65536 tCK_TIM
fCK_TIM = fCK_SYS =
60 MHz 71.58 s
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
62/84
6.3.10 Communication interface characteristics
SSP synchronous serial peripheral in master mode (SPI or TI mode)
General operating conditions: V33, 3.0V to 3.3V, V18 =1.8V, CL 45 pF.
Table 38. SSP master mode characteristics(1)
1. Data based on characterisation results, not tested in production.
Symbol Parameter Conditions Min Max Unit
fSCK SPI clock frequency(2)
2. Max frequency for the 2 SSPs is fPCLK/2; fPCLK max = 32 MHz. This takes into account the frequency
limitation due to I/O speed capability. SSP0 uses IO4 type while SSP1 uses IO2 type I/Os.
SSP0 16 MHz
SSP1 8
tr(SCK) SPI clock rise time SSP0 14
ns
SSP1 33
tf(SCK) SPI clock fall time SSP0 11
SSP1 30
tw(SCKH)
tw(SCKL)
SCK high and low time SSP0 19
SSP1 30
tNSSLQV
NSS low to Data Output
MOSI valid time
SSP0 0.5tSCK+15ns
SSP1 0.5tSCK+30ns
tSCKNSSH SCK last edge to NSS high
CPHA = 0 SSP0 0.5tSCK+15ns
SSP1 0.5tSCK+30ns
CPHA = 1 SSP0 tSCK+15ns
SSP1 tSCK+30ns
tSCKQV
SCK trigger edge to data
output MOSI valid time
SSP0 15
SSP1 30
tSCKQX
SCK trigger edge to data
output MOSI invalid time
SSP0 0
SSP1 0
tsu
Data input (MISO) setup
time w.r.t SCK sampling
edge
SSP0 25
SSP1 25
th
Data input (MISO) hold time
w.r.t SCK sampling edge
SSP0 0
SSP1 0
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
63/84
Figure 28. SPI configuration - master mode, single transfer
Figure 29. SPI configuration - master mode, continuous transfer, CPHA=0
Figure 30. SPI configuration - master mode, continuous transfer, CPHA=1
NSS
OUTPUT
SCK
OUTPUT
CPHA=0
MOSI
OUTPUT
MISO
INPUT
CPHA=0
CPHA=1
CPHA=1
t
c(SCK)
t
w(SCKH)
t
w(SCKL)
t
h(MISO)
t
su(MISO)
t
SCKQV
t
SCKQX
MSB IN
MSB OUT
BIT IN
BIT OUT LSB OUT
LSB IN
CPOL=0
CPOL=1
CPOL=0
CPOL=1
t
r(SCK)
t
f(SCK)
t
NSSLQV
t
SCKNSSH (CPHA=0)
sample
edge trigger
edge
sample
edge
trigger
edge
trigger
edge
trigger
edge
sample
edge
sample
edge
t
SCKQX
t
SCKNSSH (CPHA=1)
1 OR 0
DONT CARE DONT
CARE
1 OR 0
NSS
OUTPUT
sample
MOSI
OUTPUT
MISO
INPUT
trigger
MSB IN
MSB OUT
sample trigger sample trigger sample trigger sample trigger
LSB IN
LSB OUT
sample trigger
MSB IN
MSB OUT
sample
DONT CARE DONT CARE
1.5*t
c(SCK)
t
c(SCK)
SCK
OUTPUT
CPOL=0
CPOL=1
FRAME 1 FRAME 2
1 OR 0
t
NSSLQV
t
NSSLQV
NSS
OUTPUT
trigger
MOSI
OUTPUT
MISO
INPUT
sample
MSB IN
MSB OUT
trigger sample trigger sample trigger samlpe trigger sample
LSB IN
LSB OUT
trigger sample
MSB IN
MSB OUT
trigger
DONT CARE
t
c(SCK)
SCK
OUTPUT
CPOL=0
CPOL=1
FRAME 1 FRAME 2
sample trigger sample trigger
1 OR 0
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
64/84
Figure 31. TI configuration - master mode, single transfer
Figure 32. TI configuration - master mode, continuous transfer
NSS
MOSI
MISO
t
c(SCK)
t
w(SCKH)
t
w(SCKL)
t
h(MISO)
t
su(MISO)
t
SCKQV
t
SCKQX
t
r(SCK)
t
f(SCK)
trigger
edge
sample
edge
SCK
DONT CARE MSB IN
trigger
edge
sample
edge
OUTPUT
OUTPUT
INPUT
OUTPUT
trigger
edge
sample
edge
MSB OUT
LSB IN
LSB OUT
DONT CARE
1 OR 0
NSS
OUTPUT
MOSI
OUTPUT
MISO
INPUT
MSB IN
MSB OUT
trigger sample trigger sample trigger sample trigger
LSB IN
LSB OUT
MSB IN
MSB OUT
DONT CARE
t
c(SCK)
t
c(SCK)
FRAME 1 FRAME 2
SCK
OUTPUT
1 OR 0
sample trigger sample trigger sample trigger sample trigger sample
LSB IN
LSB OUT
DONT CARE
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
65/84
SSP synchronous serial peripheral in slave mode (SPI or TI mode)
Subject to general operating conditions with CL 45 pF
Figure 33. SPI configuration, slave mode with CPHA=0, single transfer
Table 39. SSP slave mode characteristics(1)
1. Data based on characterisation results, not tested in production.
Symbol Parameter Conditions Min Max Unit
fSCK SPI clock frequency SSP0 2.66 MHz
(fPLCK/12) MHz
SSP1
tsu(NSS)
NSS input setup time w.r.t
SCK first edge
SSP0 0
ns
SSP1 0
th(NSS)
NSS input hold time w.r.t
SCK last edge
SSP0 tPCLK+15ns
SSP1 tPCLK+15ns
tNSSLQV
NSS low to Data Output
MISO valid time
SSP0 2tPCLK 3tPCLK+30 ns
SSP1 2tPCLK 3tPCLK+30 ns
tNSSLQZ
NSS low to Data Output
MISO invalid time
SSP0 2tPCLK 3tPCLK+15 ns
SSP1 2tPCLK 3tPCLK+15 ns
tSCKQV
SCK trigger edge to data
output MISO valid time
SSP0 15
SSP1 30
tSCKQX
SCK trigger edge to data
output MISO invalid time
SSP0 2tPCLK
SSP1 2tPCLK
tsu(MOSI)
MOSI setup time w.r.t SCK
sampling edge
SSP0 0
SSP1 0
th(MOSI)
MOSI hold time w.r.t SCK
sampling edge
SSP0 3tPCLK+15 ns
SSP1 3tPCLK+15 ns
NSS
INPUT
SCK
INPUT
CPHA=0
MOSI
INPUT
MISO
OUTPUT
CPHA=0
t
c(SCK)
t
w(SCKH)
t
w(SCKL)
t
r(SCK)
t
f(SCK)
t
SCKQV(MISO)
t
su(SI)
t
h(SI)
MSB OUT
MSB IN
BIT OUT
LSB IN
LSB OUT
CPOL=0
CPOL=1
t
su(NSS)
t
h(NSS)
t
SCKQX(MISO)
BIT1 IN
sample
edge
trigger
edge trigger
edge
t
NSSHQZ
z
t
NSSLQV
sample
edge
z
DONT CARE DONT CARE
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
66/84
Figure 34. SPI configuration - slave mode with CPHA=0, continuous transfer
Figure 35. SPI configuration, slave mode with CPHA=1, single transfer
Figure 36. SPI configuration - slave mode with CPHA=1, continuous transfer
NSS
INPUT
sample
MOSI
INPUT
MISO
OUTPUT
trigger
MSB OUT
MSB IN
sample trigger sample trigger sample trigger sample trigger
LSB OUT
LSB IN
sample trigger
MSB OUT
MSB IN
sample
1.5*t
c(SCK)
t
c(SCK)
SCK
INPUT
CPOL=0
CPOL=1
FRAME 1 FRAME 2
DONT CARE
z
tNSSLQV
1.5*t
c(SCK)
z
tNSSLQV
tNSHQZ
DONT CARE
NSS INPUT
SCK INPUT
CPHA=1
MOSI INPUT
MISO OUTPUT
CPHA=1
tc(SCK)
tw(SCKH)
tw(SCKL)
tr(SCK)
tf(SCK)
tSCKQV(MISO)
tsu(SI) th(SI)
MSB OUT
MSB IN
BIT OUT
LSB IN
LSB OUT
CPOL=0
CPOL=1
tsu(NSS) th(NSS)
BIT1 IN
trigger
edge
sample
edge sample
edge
tNSSHQX
z
tNSSLQV tSCKQX(MISO)
trigger
edge
z
tNSSHQZ
DONT
CARE
DONT CARE
NSS
OUTPUT
trigger
MOSI
OUTPUT
MISO
INPUT
sample
MSB IN
MSB OUT
trigger sample trigger sample trigger samlpe trigger sample
LSB IN
LSB OUT
trigger sample
MSB IN
MSB OUT
trigger
DONT CARE
t
c(SCK)
SCK
OUTPUT
CPOL=0
CPOL=1
FRAME 1 FRAME 2
sample trigger sample trigger
1 OR 0
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
67/84
Figure 37. TI configuration - slave mode, single transfer
Figure 38. TI configuration - slave mode, continuous transfer
NSS
MISO
MOSI
t
c(SCK)
t
w(SCKH)
t
w(SCKL)
t
h(MOSI)
t
su(MOSI)
t
SCKQV
t
SCKQX
t
r(SCK)
t
f(SCK)
trigger
edge
sample
edge
SCK
DONT CARE MSB IN
trigger
edge
sample
edge
INPUT
INPUT
INPUT
OUTPUT
trigger
edge
sample
edge
MSB OUT
LSB IN
LSB OUT
DONT CARE
t
su(NSS)
t
c(SCK)
/2
z
tSCKQZ
t
c(SCK)
/2
z
1 OR 0
NSS
OUTPUT
MISO
OUTPUT
MOSI
INPUT
MSB IN
MSB OUT
trigger sample trigger sample trigger sample trigger
LSB IN
LSB OUT
MSB IN
MSB OUT
DONT CARE
t
c(SCK)
t
c(SCK)
FRAME 1 FRAME 2
SCK
OUTPUT
1 OR 0
sample trigger sample trigger sample trigger sample trigger sample
LSB IN
LSB OUT
DONT CARE
t
su(NSS)
t
h(NSS)
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
68/84
SMI - serial memory interface
Subject to general operating conditions with CL 30 pF.
Figure 39. SMI timing diagram
I2C - Inter IC control interface
Subject to general operating conditions for VDD_IO, fPCLK, and TA unless otherwise specified.
The I2C interface meets the requirements of the Standard I2C communication protocol
described in the following table with the restriction mentioned below:
Restriction: The I/O pins which SDA and SCL are mapped to are not “True” Open-
Drain: when configured as open-drain, the PMOS connected between the I/O pin and
VDD_IO is disabled, but it is still present. Also, there is a protection diode between the
I/O pin and VDD_IO. Consequently, when using this I2C in a multi-master network, it is
Table 40. SMI characteristics(1)
1. Data based on characterisation results, not tested in production.
Symbol Parameter Min Max Unit
fSMI_CK SMI clock frequency 32(2)(3)
2. Max. frequency = fPCLK/2 = 64/2 = 32 MHz.
3. Valid for all temperature ranges: -40 to 105 °C, with 30 pF load capacitance.
MHz
48(4)
4. Valid up to 60 °C, with 10 pF load capacitance.
tr(SMI_CK) SMI clock rise time 10 ns
tf(SMI_CK) SMI clock fall time 8
tv(SMI_DOUT) Data output valid time 10
th(SMI_DOUT) Data output hold time 0
tv(SMI_CSSx) CSS output valid time 10
th(SMI_CSSx) CSS output hold time 0
tsu(SMI_DIN) Data input setup time 0
th(SMI_DIN) Data input hold time 5
SMI_DOUT OUTPUT
SMI_DIN INPUT
tc(SMI_CK)
tw(SMI_CKH)
tw(SMI_CKL)
th(SMI_DIN)
tsu(SMI_DIN)
tv(SMI_DOUT) th(SMI_DOUT)
MSB IN
MSB OUT
BIT6 IN
BIT6 OUT LSB OUT
LSB IN
tr(SMI_CK)
tf(SMI_CK)
SMI_CK OUTPUT
SMI_CSSX OUTPUT
tv(SMI_CSS) th(SMI_CSS)
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
69/84
not possible to power off the STR7x while some another I2C master node remains
powered on: otherwise, the STR7x will be powered by the protection diode.
Refer to I/O port characteristics for more details on the input/output alternate function
characteristics (SDA and SCL).
Figure 40. Typical application with I2C bus and timing diagram
1. Measurement points are done at CMOS levels: 0.3xVDD and 0.7xVDD.
Table 41. SDA and SCL characteristics
Symbol Parameter
Standard mode
I2CFast mode I2C(1)
1. fPCLK, must be at least 8 MHz to achieve max fast I2C speed (400 kHz).
Unit
Min(2)
2. Data based on standard I2C protocol requirement, not tested in production.
Max(2) Min(2) Max(2)
tw(SCLL) SCL clock low time 4.7 1.3
μs
tw(SCLH) SCL clock high time 4.0 0.6
tsu(SDA) SDA setup time 250 100
ns
th(SDA) SDA data hold time 0(3)
3. The maximum hold time th(SDA) is not applicable
0(4)
4. The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge the
undefined region of the falling edge of SCL.
900(3)
tr(SDA)
tr(SCL)
SDA and SCL rise time 1000 20+0.1Cb300
tf(SDA)
tf(SCL)
SDA and SCL fall time 300 20+0.1Cb300
th(STA) START condition hold time 4.0 0.6
μs
tsu(STA) Repeated START condition setup time 4.7 0.6
tsu(STO) STOP condition setup time 4.0 0.6 μs
tw(STO:STA) STOP to START condition time (bus free) 4.7 1.3 μs
CbCapacitive load for each bus line 400 400 pF
REPEATED START
START
STOP
START
tf(SDA) tr(SDA) tsu(SDA) th(SDA)
tf(SCK)
tr(SCK)
tw(SCKL)
tw(SCKH)
th(STA) tsu(STO)
tsu(STA) tw(STO:STA)
SDA
SCL
4.7kΩSDA
STRT75X
SCL
VDD
100Ω
100Ω
VDD
4.7kΩ
I2CBUS
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
70/84
6.3.11 USB characteristics
The USB interface is USB-IF certified (Full Speed).
Figure 41. USB: data signal rise and fall time
Table 42. USB startup time
Symbol Parameter Conditions Max Unit
tSTARTUP USB transceiver startup time 1 µs
Table 43. USB characteristics
USB DC Electrical Characteristics
Symbol Parameter Conditions Min.(1)(2)
1. All the voltages are measured from the local ground potential.
2. It is important to be aware that the DP/DM pins are not 5 V tolerant. As a consequence, in case of a a
shortcut with Vbus (typ: 5.0V), the protection diodes of the DP/DM pins will be direct biased . This will not
damage the device if not more than 50 mA is sunk for longer than 24 hours but the reliability may be
affected.
Max.(1)(2) Unit
Input Levels
VDI Differential Input Sensitivity I(DP, DM) 0.2
V
VCM
Differential Common Mode
Range Includes VDI range 0.8 2.5
VSE
Single Ended Receiver
Threshold 1.3 2.0
Output Levels
VOL Static Output Level Low RL of 1.5 kΩ to 3.6V(3)
3. RL is the load connected on the USB drivers
0.3 V
VOH Static Output Level High RL of 15 kΩ to VSS(3) 2.8 3.6
Table 44. USB: Full speed electrical characteristics
Symbol Parameter Conditions Min Max Unit
Driver characteristics:
trRise time(1) CL=50 pF 420ns
tfFall Time1) CL=50 pF 4 20 ns
Differential
Data Lines
VSS
tftr
Crossover
points
VCRS
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
71/84
trfm Rise/ Fall Time matching tr/tf90 110 %
VCRS Output signal Crossover Voltage 1.3 2.0 V
1. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
Table 44. USB: Full speed electrical characteristics
Symbol Parameter Conditions Min Max Unit
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
72/84
6.3.12 10-bit ADC characteristics
Subject to general operating conditions for VDDA_ADC, fPCLK, and TA unless otherwise
specified.
Table 45. 10-bit ADC characteristics
Symbol Parameter Conditions Min Typ(1)
1. Unless otherwise specified, typical data are based on TA=25°C. They are given only as design guidelines
and are not tested.
Max Unit
fADC ADC clock frequency 0.4 8 MHz
VAIN Conversion voltage range(2)
2. Calibration is needed once after each power-up.
VSSA_ADC VDDA_ADC V
RAIN External input impedance(3)(4)
3. CPARASITIC represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus
the pad capacitance (3 pF). A high CPARASITIC value will downgrade conversion accuracy. To remedy this,
fADC should be reduced.
4. Depending on the input signal variation (fAIN), CAIN can be increased for stabilization time and reduced to
allow the use of a larger serial resistor (RAIN). It is valid for all fADC frequencies 8 MHz.
10 kΩ
CAIN
External capacitor on analog
input(3)(4) 6.8 pF
Ilkg Induced input leakage current
+400 µA injected
on any pin 1μA
-400 µA injected
on any pin
except specific
adjacent pins in
Ta b l e 4 6
1μA
-400µA injected
on specific
adjacent pins in
Ta b l e 4 6
40 μA
CADC
Internal sample and hold
capacitor 3.5 pF
tCAL Calibration Time fCK_ADC=8 MHz 725.25 μs
5802 1/fADC
tCONV
Total Conversion time
(including sampling time)
fCK_ADC=8 MHz 3.75 μs
30 (11 for sampling + 19 for
Successive Approximation) 1/fADC
IADC
Sunk on
VDDA_ADC
3.7 mA
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
73/84
ADC accuracy vs. negative injection current
Injecting negative current on specific pins listed in Ta bl e 4 6 (generally adjacent to the analog
input pin being converted) should be avoided as this significantly reduces the accuracy of
the conversion being performed. It is recommended to add a Schottky diode (pin to ground)
to pins which may potentially inject negative current.
Figure 42. Typical application with ADC
Analog power supply and reference pins
The VDDA_ADC and VSSA_ADC pins are the analog power supply of the A/D converter cell.
Separation of the digital and analog power pins allow board designers to improve A/D
performance. Conversion accuracy can be impacted by voltage drops and noise in the event
of heavily loaded or badly decoupled power supply lines (see : General PCB design
guidelines on page 74).
Table 46. List of adjacent pins
Analog input Related adjacent pins
aNone
AIN1/P0.03 None
AIN2/P0.12 P0.11
AIN3/P0.17 P0.18 and P0.16
AIN4/P0.19 P0.24
AIN5/P0.22 None
AIN6/P0.23 P2.04
AIN7/P0.27 P1.11 and P0.26
AIN8/P0.29 P0.30 and P0.28
AIN9/P1.04 None
AIN10/P1.06 P1.05
AIN11/P1.08 P1.04 and P1.13
AIN12/P1.11 P2.17 and P0.27
AIN13/P1.12 None
AIN14/P1.13 P1.14 and P1.01
AIN15/P1.14 None
AINx
STR75XX
VDD
IL
±1μA
VT
0.6V
VT
0.6V CADC
3.2pF
VAIN
RAIN 10-Bit A/D
Conversion
2kΩ(max)
CAIN
Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx
74/84
General PCB design guidelines
To obtain best results, some general design and layout rules should be followed when
designing the application PCB to shield the noise-sensitive, analog physical interface from
noise-generating CMOS logic signals.
Use separate digital and analog planes. The analog ground plane should be connected
to the digital ground plane via a single point on the PCB.
Filter power to the analog power planes. It is recommended to connect capacitors, with
good high frequency characteristics, between the power and ground lines, placing
0.1 µF and optionally, if needed 10 pF capacitors as close as possible to the STR7
power supply pins and a 1 to 10 µF capacitor close to the power source (see
Figure 43).
The analog and digital power supplies should be connected in a star network. Do not
use a resistor, as VDDA_ADC is used as a reference voltage by the A/D converter and
any resistance would cause a voltage drop and a loss of accuracy.
Properly place components and route the signal traces on the PCB to shield the analog
inputs. Analog signals paths should run over the analog ground plane and be as short
as possible. Isolate analog signals from digital signals that may switch while the analog
inputs are being sampled by the A/D converter. Do not toggle digital outputs near the
A/D input being converted.
Software filtering of spurious conversion results
For EMC performance reasons, it is recommended to filter A/D conversion outliers using
software filtering techniques.
Figure 43. Power supply filtering
VSS
VDD_IO
0.1μF
VDD
STR75XX
VDDA_ADC
VSSA_ADC
POWER
SUPPLY
SOURCE
STR7
DIGITAL NOISE
FILTERING
EXTERNAL
NOISE
FILTERING
1 to 10μF
0.1μF
(3.3V or 5.0V)
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters
75/84
Figure 44. ADC accuracy characteristics
Table 47. ADC accuracy
ADC accuracy with fCK_SYS = 20 MHz, fADC=8 MHz, RAIN < 10 kΩ
This assumes that the ADC is calibrated(1)
1. Calibration is needed once after each power-up.
Symbol Parameter Conditions Typ Max Unit
|ET| Total unadjusted error (2) (3)
2. Refer to ADC accuracy vs. negative injection current on page 73
3. ADC Accuracy vs. MCO (Main Clock Output): the ADC accuracy can be significantly degraded when
activating the MCO on pin P0.01 while converting an analog channel (especially those which are close to
the MCO pin). To avoid this, when an ADC conversion is launched, it is strongly recommended to disable
the MCO.
VDDA_ADC=3.3 V 1 1.2
LSB
VDDA_ADC=5.0 V 1 1.2
|EO| Offset error(2) (3) VDDA_ADC=3.3 V 0.15 0.5
VDDA_ADC=5.0 V 0.15 0.5
EGGain Error (2) (3) VDDA_ADC=3.3 V -0.8 -0.2
VDDA_ADC=5.0 V -0.8 -0.2
|ED| Differential linearity error(2) (3) VDDA_ADC=3.3 V 0.7 0.9
VDDA_ADC=5.0 V 0.7 0.9
|EL| Integral linearity error (2) (3) VDDA_ADC=3.3 V 0.6 0.8
VDDA_ADC=5.0 V 0.6 0.8
EO
EG
1LSB
IDEAL
1LSBIDEAL
VDDA VSSA
1024
-----------------------------------------=
Vin
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
Digital Result ADCDR
1023
1022
1021
5
4
3
2
1
0
7
6
1234567 1021 1022 1023 1024
(1)
(2)
ET
ED
EL
(3)
VDDA
VSSA
Package characteristics STR750Fxx STR751Fxx STR752Fxx STR755Fxx
76/84
7 Package characteristics
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
7.1 Package mechanical data
Figure 45. 64-pin low profile quad flat package (10x10)
Dim. mm inches(1)
1. Values in inches are converted from mm
and rounded to 4 decimal digits.
Min Typ Max Min Typ Max
A1.60 0.0630
A1 0.05 0.15 0.0020 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
b0.17 0.22 0.27 0.0067 0.0087 0.0106
C0.09 0.20 0.0035 0.0079
D12.00 0.4724
D1 10.00 0.3937
E12.00 0.4724
E1 10.00 0.3937
e0.50 0.0197
K 3.5° 3.5°
L0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 0.0394
Number of pins
N64
L1 L
K
0.10mm
.004
seating plane
A
A2
A1
B
e
c
D
D1
D3
EE1E3
PIN 1
IDENTIFICATION
M x 45°
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Package characteristics
77/84
Figure 46. 100-pin low profile flat package (14x14)
Figure 47. 64-ball low profile fine pitch ball grid array package
Dim. mm inches(1)
1. Values in inches are converted from mm and
rounded to 4 decimal digits.
Min Typ Max Min Typ Max
A 1.60 0.0630
A1 0.05 0.15 0.0020 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
b0.17 0.22 0.27 0.0067 0.0087 0.0106
C0.09 0.20 0.0035 0.0079
D 16.00 0.6299
D1 14.00 0.5512
E 16.00 0.6299
E1 14.00 0.5512
e0.50 0.0197
θ 3.5° 3.5°
L0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 0.0394
Number of Pins
N100
θ
c
L
L
1
e
b
A
A
2
A1
D
D1
E
E
1
Dim. mm inches(1)
1. Values in inches are converted from mm and rounded
to 4 decimal digits.
Min Typ Max Min Typ Max
A1.210 1.700 0.0476 0.0669
A1 0.270 0.0106
A2 1.120 0.0441
b0.450 0.500 0.550 0.0177 0.0197 0.0217
D7.750 8.000 8.150 0.3051 0.3150 0.3209
D1 5.600 0.2205
E7.750 8.000 8.150 0.3051 0.3150 0.3209
E1 5.600 0.2205
e0.720 0.800 0.880 0.0283 0.0315 0.0346
f1.050 1.200 1.350 0.0413 0.0472 0.0531
ddd 0.120 0.0047
Number of Pins
N64
Package characteristics STR750Fxx STR751Fxx STR752Fxx STR755Fxx
78/84
Figure 48. 100-ball low profile fine pitch ball grid array package
Figure 49. Recommended PCB design rules (0.80/0.75mm pitch BGA)
Dim. mm inches(1)
1. Values in inches are converted from mm and rounded to 4 decimal
digits.
Min Typ Max Min Typ Max
A1.700 0.0669
A1 0.270 0.0106
A2 1.085 0.0427
A3 0.30 0.0118
A4 0.80 0.0315
b0.45 0.50 0.55 0.0177 0.0197 0.0217
D9.85 10.00 10.15 0.3878 0.3937 0.3996
D1 7.20 0.2835
E9.85 10.00 10.15 0.3878 0.3937 0.3996
E1 7.20 0.2835
e0.80 0.0315
F1.40 0.055
ddd 0.12 0.005
eee 0.15 0.006
fff 0.08 0.003
Number of Balls
N100
Dpad
Dsm
Dpad 0.37 mm
Dsm 0.52 mm typ. (depends on solder
mask registration tolerance
Solder paste 0.37 mm aperture diameter
Non solder mask defined pads are recommended
4 to 6 mils screen print
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Package characteristics
79/84
7.2 Thermal characteristics
The maximum chip junction temperature (TJmax) must never exceed the values given in
Table 10: General operating conditions on page 34.
The maximum chip-junction temperature, TJmax, in degrees Celsius, may be calculated
using the following equation:
TJmax = TAmax + (PDmax x ΘJA)
Where:
–T
Amax is the maximum Ambient Temperature in °C,
ΘJA is the Package Junction-to-Ambient Thermal Resistance, in ° C/W,
–P
Dmax is the sum of PINTmax and PI/Omax (PDmax = PINTmax + PI/Omax),
–P
INTmax is the product of IDD and VDD, expressed in Watts. This is the maximum
chip internal power.
–P
I/Omax represents the maximum Power Dissipation on Output Pins.
Where:
PI/Omax = Σ (VOL*IOL) + Σ((VDD-VOH)*IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high
level in the application.
7.2.1 Reference document
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org
Table 48. Thermal characteristics(1)
1. Thermal resistances are based on JEDEC JESD51-2 with 4-layer PCB in a natural convection
environment.
Symbol Parameter Value Unit
ΘJA
Thermal Resistance Junction-Ambient
LQFP 100 - 14 x 14 mm / 0.5 mm pitch 46 °C/W
ΘJA
Thermal Resistance Junction-Ambient
LQFP 64 - 10 x 10 mm / 0.5 mm pitch 45 °C/W
ΘJA
Thermal Resistance Junction-Ambient
LFBGA 64 - 8 x 8 x 1.7mm 58 °C/W
ΘJA
Thermal Resistance Junction-Ambient
LFBGA 100 - 10 x 10 x 1.7mm 41 °C/W
Package characteristics STR750Fxx STR751Fxx STR752Fxx STR755Fxx
80/84
7.2.2 Selecting the product temperature range
When ordering the microcontroller, the temperature range is specified in the order code
Table 49: Order codes on page 81.
The following example shows how to calculate the temperature range needed for a given
application.
Assuming the following application conditions:
Maximum ambient temperature TAmax= 82 °C (measured according to JESD51-2),
IDDmax=8 mA, VDD = 5 V, maximum 20 I/Os used at the same time in output at low level
with IOL = 8 mA, VOL= 0.4 V
PINTmax = 8 mA x 5 V= 400 mW
PIOmax = 20 x 8 mA x 0.4V = 64 mW
This gives: PINTmax= 400 mW and PIOmax 64 mW:
PDmax = 400 mW + 64 mW
Thus: PDmax = 464 mW
Using the values obtained in Ta b l e 4 8 TJmax is calculated as follows:
For LQFP100, 46°C/W
TJmax = 82° C + (46° C/W x 464 mW) = 82°C + 21°C = 103° C
This is within the range of the suffix 6 version parts (-40 < TJ < 105° C).
In this case, parts must be ordered at least with the temperature range suffix 6
(see Table 49: Order codes on page 81).
For BGA64, 58°C/W
TJmax = 82° C + (58° C/W x 464 mW) = 82°C + 27°C = 109° C
This is within the range of the suffix 7 version parts (-40 < TJ < 125° C).
In this case, parts must be ordered at least with the temperature range suffix 7
(see Table 49: Order codes on page 81).
Figure 50. LQFP100 PDmax vs TA
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Order codes
81/84
8 Order codes
Table 49. Order codes
Order code
Flash Prog.
Memory
(Bank 0)
Kbytes
Package CAN
Periph
USB
Periph
Nominal
Temp. Range
(TA)
STR750FV0T6 64
LQFP100 14x14
Yes Yes -40 to +85°C
STR750FV1T6 128
STR750FV2T6 256
STR750FV0H6 64
LFBGA100 10x10STR750FV1H6 128
STR750FV2H6 256
STR751FR0T6 64
LQFP64 10x10
- Yes -40 to +85°C
STR751FR1T6 128
STR751FR2T6 256
STR751FR0H6 64
LFBGA64 8x8STR751FR1H6 128
STR751FR2H6 256
STR752FR0T6 64
LQFP64 10x10
Yes - -40 to +85°C
STR752FR1T6 128
STR752FR2T6 256
STR752FR0H6 64
LFBGA64 8x8STR752FR1H6 128
STR752FR2H6 256
STR752FR0T7 64
LQFP64 10x10
Yes - -40 to +105°C
STR752FR1T7 128
STR752FR2T7 256
STR752FR0H7 64
LFBGA64 8x8STR752FR1H7 128
STR752FR2H7 256
STR755FR0T6 64
LQFP64 10x10
- - -40 to +85°C
STR755FR1T6 128
STR755FR2T6 256
STR755FR0H6 64
LFBGA64 8x8STR755FR1H6 128
STR755FR2H6 256
Order codes STR750Fxx STR751Fxx STR752Fxx STR755Fxx
82/84
STR755FV0T6 64
LQFP100 14x14
- - -40 to +85°C
STR755FV1T6 128
STR755FV2T6 256
STR755FV0H6 64
LFBGA100 10x10STR755FV1H6 128
STR755FV2H6 256
Table 49. Order codes (continued)
Order code
Flash Prog.
Memory
(Bank 0)
Kbytes
Package CAN
Periph
USB
Periph
Nominal
Temp. Range
(TA)
STR750Fxx STR751Fxx STR752Fxx STR755Fxx Revision history
83/84
9 Revision history
Table 50. Document revision history
Date Revision Description of Changes
25-Sep-2006 1 Initial release
30-Oct-2006 2 Added power consumption data for 5V operation in Section 6
04-Jul-2007 3
Changed datasheet title from STR750F to STR750FXX STR751Fxx
STR752Fxx STR755xx.
Added Table 1: Device summary on page 1
Added note 1 to Ta ble 6
Added STOP mode IDD max. values in Ta bl e 1 4
Updated XT2 driving current in Table 23.
Updated RPD in Ta b l e 3 2
Updated Table 21: XRTC1 external clock source on page 45
Updated Table 34: Output speed on page 57
Added characteristics for SSP synchronous serial peripheral in master
mode (SPI or TI mode) on page 62 and SSP synchronous serial
peripheral in slave mode (SPI or TI mode) on page 65
Added characteristics for SMI - serial memory interface on page 68
Added Table 42: USB startup time on page 70
23-Oct-2007 4
Updated Section 6.2.3: Thermal characteristics on page 33
Updated PD, TJ and TA in Section 6.3: Operating conditions on page 34
Updated Table 20: XT1 external clock source on page 44
Updated Table 21: XRTC1 external clock source on page 45
Updated Section 7: Package characteristics on page 76 (inches rounded
to 4 decimal digits instead of 3)
Updated Ordering information Section 8: Order codes on page 81
17-Feb-2009 5
Modified note 3 below Table 8: Current characteristics on page 33
Added AHB clock frequency for write access to Flash registers in
Table 10: General operating conditions on page 34
Modified note 3 below Table 41: SDA and SCL characteristics on
page 69
STR750Fxx STR751Fxx STR752Fxx STR755Fxx
84/84
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